Results 231 to 240 of about 25,106,713 (303)
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Artificial Neural Network-Based Compact Modeling Methodology for Advanced Transistors
IEEE Transactions on Electron Devices, 2021The artificial neural network (ANN)-based compact modeling methodology is evaluated in the context of advanced field-effect transistor (FET) modeling for Design-Technology-Cooptimization (DTCO) and pathfinding activities.
Jing Wang +5 more
semanticscholar +1 more source
A review of compact modeling for phase change memory
Journal of Semiconductors, 2022Phase change memory (PCM) attracts wide attention for the memory-centric computing and neuromorphic computing. For circuit and system designs, PCM compact models are mandatory and their status are reviewed in this work.
Feilong Ding +6 more
semanticscholar +1 more source
Computer Graphics Forum, 2011
Abstract Development of approximation techniques for highly detailed surfaces is one of the challenges faced today. We introduce a new mesh structure that allows dense triangular meshes of arbitrary topology to be approximated. The structure is constructed from the information gathered during a simplification process.
Narcís Coll, Teresa Paradinas
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Abstract Development of approximation techniques for highly detailed surfaces is one of the challenges faced today. We introduce a new mesh structure that allows dense triangular meshes of arbitrary topology to be approximated. The structure is constructed from the information gathered during a simplification process.
Narcís Coll, Teresa Paradinas
openaire +1 more source
International Electron Devices Meeting, 2020
This paper highlights some of the challenges faced for the modeling of MOSFET devices for operation at cryogenic temperature (CT). A special focus is given on the modeling of the threshold voltage VT and the subthreshold swing SS.
C. Enz, A. Beckers, F. Jazaeri
semanticscholar +1 more source
This paper highlights some of the challenges faced for the modeling of MOSFET devices for operation at cryogenic temperature (CT). A special focus is given on the modeling of the threshold voltage VT and the subthreshold swing SS.
C. Enz, A. Beckers, F. Jazaeri
semanticscholar +1 more source
2008 IEEE Custom Integrated Circuits Conference, 2008
As CMOS technology continues its relentless scaling, new materials are being introduced and novel device structures are being considered. Adequate compact models and simulation techniques are required to account for their impact on circuit characteristics.
Gennady Gildenblat, Brian Chen
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As CMOS technology continues its relentless scaling, new materials are being introduced and novel device structures are being considered. Adequate compact models and simulation techniques are required to account for their impact on circuit characteristics.
Gennady Gildenblat, Brian Chen
openaire +1 more source
A compact and accurate model for classification
IEEE Transactions on Knowledge and Data Engineering, 2004We describe and evaluate an information-theoretic algorithm for data-driven induction of classification models based on a minimal subset of available features. The relationship between input (predictive) features and the target (classification) attribute is modeled by a tree-like structure termed an information network (IN).
Mark Last, Oded Maimon
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Compact modeling of noise in CMOS
IEEE Custom Integrated Circuits Conference 2006, 2006The physical background of the thermal noise equations of the PSP MOSFET model [1] is presented. The PSP thermal noise model is shown to pass a number of proposed benchmark tests for MOSFET thermal noise. Without any fitting parameters, it is shown to predict with great accuracy a collection of experimental data on three modern CMOS technologies.
Andries J. Scholten +3 more
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A Physical-Based Artificial Neural Networks Compact Modeling Framework for Emerging FETs
IEEE Transactions on Electron DevicesWe report a compact modeling framework based on the Grove–Frohman (GF) model and artificial neural networks (ANNs) for emerging gate-all-around (GAA) MOSFETs.
Ya-Shu Yang, Yiming Li, S. Kola
semanticscholar +1 more source
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 1988
A description is given of ASIM (ATT i.e. the effects of mobility reduction, carrier velocity saturation, and channel length modulation are included in both. The ASIM model accounts for effects due to device dimensions and temperature. The performance of ASIM under DC and transient conditions is evaluated by comparing the current and voltage at the ...
Shiuh-Wuu Lee, Robert C. Rennick
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A description is given of ASIM (ATT i.e. the effects of mobility reduction, carrier velocity saturation, and channel length modulation are included in both. The ASIM model accounts for effects due to device dimensions and temperature. The performance of ASIM under DC and transient conditions is evaluated by comparing the current and voltage at the ...
Shiuh-Wuu Lee, Robert C. Rennick
openaire +1 more source