Results 161 to 170 of about 3,293,835 (293)

High‐Entropy Alloy Interlayers Toward Advanced Joining for High‐Performance Structural Applications: Current Progress and Emerging Challenges

open access: yesAdvanced Engineering Materials, EarlyView.
HEA interlayers offer a versatile route for joining high‐performance structural materials. Their compositional and structural design regulates interfacial reactions, suppresses brittle IMCs, and improves metallurgical bonding. Sandwich interlayers further integrate defect healing with precipitation strengthening, enabling improved strength–ductility ...
Lin Yuan   +4 more
wiley   +1 more source

A Novel Approach to Estimate the Transition Temperature via Dynamic Nanoindentation

open access: yesAdvanced Engineering Materials, EarlyView.
A new dynamic nanoindentation‐based method was developed that uses the stiffness ratio as an indicator of the elastic–plastic deformation contributions at different temperatures. The approach successfully identified transition temperatures in ferritic steel and distinguished them from continuously ductile austenitic steel.
Stefan Zeiler   +4 more
wiley   +1 more source

Elastic–Plastic Modeling and Experimental Characterization of Granular Jamming Actuators

open access: yesAdvanced Engineering Materials, EarlyView.
Granular jamming enables rapid switching between soft and rigid mechanical states. Here, a reduced‐order elastic‐perfectly‐plastic beam framework captures pressure‐dependent loading, unloading, residual deformation, and hysteresis in jammed beams, while matching three‐point bending experiments across materials and geometries. The framework links design
Saheli Patel   +2 more
wiley   +1 more source

Rotary 3D Printing With Integrated Electroplating

open access: yesAdvanced Engineering Materials, EarlyView.
A rotary material extrusion platform integrates localized copper electroplating with printing and encapsulation to fabricate cylindrical polymer–metal structures containing fully embedded, low‐resistance conductive pathways that enable internal Joule heating and thermally activated shape‐memory responses.
Antonio Zagaria   +5 more
wiley   +1 more source

Electrodeposition in Structural Lattices of Variable Architectures

open access: yesAdvanced Engineering Materials, EarlyView.
Electrodeposition enables geometry‐sensitive, autonomous void filling while simultaneously tuning chemical and mechanical properties. The development of approaches that can autonomously fill and heal material voids and yield composites with tailorable properties is increasingly relevant in engineering.
Yeong‐Man Kwon   +3 more
wiley   +1 more source

All‐in‐One Analog AI Hardware: On‐Chip Training and Inference with Conductive‐Metal‐Oxide/HfOx ReRAM Devices

open access: yesAdvanced Functional Materials, EarlyView.
An all‐in‐one analog AI accelerator is presented, enabling on‐chip training, weight retention, and long‐term inference acceleration. It leverages a BEOL‐integrated CMO/HfOx ReRAM array with low‐voltage operation (<1.5 V), multi‐bit capability over 32 states, low programming noise (10 nS), and near‐ideal weight transfer.
Donato Francesco Falcone   +11 more
wiley   +1 more source

Intermediate Resistive State in Wafer‐Scale Vertical MoS2 Memristors Through Lateral Silver Filament Growth for Artificial Synapse Applications

open access: yesAdvanced Functional Materials, EarlyView.
In MOCVD MoS2 memristors, a current compliance‐regulated Ag filament mechanism is revealed. The filament ruptures spontaneously during volatile switching, while subsequent growth proceeds vertically through the MoS2 layers and then laterally along the van der Waals gaps during nonvolatile switching.
Yuan Fa   +19 more
wiley   +1 more source

Integration of Low‐Voltage Nanoscale MoS2 Memristors on CMOS Microchips

open access: yesAdvanced Functional Materials, EarlyView.
This article presents the first monolithic integration of nanoscale MoS2‐based memristors into the back‐end‐of‐line of foundry‐fabricated CMOS microchips in a one‐transistor‐one‐resistor (1T1R) architecture. The MoS2‐based 1T1R cells exhibit forming‐free, nonvolatile resistive switching with ultra‐low operating voltages, low cycle‐to‐cycle variability ...
Jimin Lee   +16 more
wiley   +1 more source

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