Results 191 to 200 of about 3,483,841 (243)
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Measurement of Surface Potential or Contact Potential Differences
Review of Scientific Instruments, 1946The term ``surface potential'' is recommended as preferable to ``contact potential'' when surface effects are being studied. The use of a pH meter for measurement of surface potentials is described.
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Quantum oscillations of the contact potential difference
Soviet Journal of Low Temperature Physics, 1987It is shown that, because of screening, quantum oscillations, owing to the oscillations of the chemical potential in the bulk of the metal, in the contact potential difference in a magnetic field are determined by the factor ∼ exp(− D/H/rs) (DH is the diameter of the electron orbit in a magnetic field and rs is the screening radius).
S. G. Semenchinskiĭ, V. S. Édel’man
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On the Measurement of Contact Differences of Potential
Proceedings of the Physical Society of London, 1910The Paper describes two methods of measuring the contact differences of potential of pairs of metals. The first, or deflection, method depends on the property which a radioactive source has of destroying a field of electrostatic force in air, and the second, or null, method on the possibility of determining by means of such a source whether such a ...
A Anderson, J E Bowen
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Work function values from contact potential difference measurements
British Journal of Applied Physics, 1964Attempts to refer all reliable contact potential difference measurements to the reference value 4.545 ev of the work function of polycrystalline tungsten showed that two measurements were still required. These have been carried out, and give the results (a) - 0.25 ± 0.02 v, and (b) - 0.110 ± 0.010 v for the contact potential differences between ...
B J Hopkins, J C Riviere
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Contact potential differences for III–V compound surfaces
Journal of Vacuum Science and Technology, 1976Contact potential difference (CPD) measurements are reported for GaAs, GaP, and InAs UHV-cleaved single crystals, and for GaAs epitaxially grown layers of (110) orientation. For the GaAs and InAs single crystals the CPD between n- and p-type samples of the same material was practically equal to the band gap.
J. van Laar, A. Huijser
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The Three-Phase Contact Potential Difference Modulates the Water Surface Charge
The Journal of Physical Chemistry Letters, 2023The surface charge of an open water surface is crucial for solvation phenomena and interfacial processes in aqueous systems. However, the magnitude of the charge is controversial, and the physical mechanism of charging remains incompletely understood.
Vasily Artemov +8 more
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The contact potential difference between tungsten and niobium
British Journal of Applied Physics, 1964Contact potential difference measurements have been made between tungsten and niobium foil using both the Kelvin and the displacement of the retarding potential line techniques in ultra-high vacuum conditions. Values of 0.18 ± 0.04 and 0.17 ± 0.03 v were obtained respectively leading to a mean work function for niobium of 4.37 ± 0.03 ev.
B J Hopkins, K J Ross
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The contact potential difference or Volta potential
1958Sometime in 1801, Volta, who, together with Galvani, was responsible for the development of the galvanic cell, Voltaic pile, or, in short, the electrolytic cell, believed that there was an intrinsic potential difference between dry metals in no way related to the electrolytic phenomena occurring between metals in solutions.
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Ionization Method of Measuring Contact Potential Differences
Review of Scientific Instruments, 1964A modification of the ionization method of measuring the contact potential difference between two surfaces is described which permits remote separation between the source electrodes and the indicating meter. Elapsed time recording is easily accomplished. The errors resulting from large separation between the electrodes are analyzed.
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Bernoulli effect and contact potential difference in superconductors
Soviet Journal of Low Temperature Physics, 1983An expression is derived for the Bernoulli potential that arises in superconductors with an inhomogeneous current distribution. The expression is valid for arbitrary temperatures and superfluid velocities. In the superconductor–dielectric–superconductor system we consider the Bernoulli effect, which manifests itself in a contact potential difference ...
A. N. Omel'yanchuk, S. I. Beloborod'ko
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