Results 251 to 260 of about 27,473 (304)

Annealing of copper electrodeposits

Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 1999
The properties of electroplated copper film have been investigated as a function of annealing temperatures together with the diffusion barrier performance. Electroplated copper films on copper and tungsten seed materials were annealed from 300 to 700 °C in N2 atmosphere for grain growth study. The average grain size of the as-deposited copper films was
C. H. Seah, S. Mridha, L. H. Chan
openaire   +1 more source

Superconformal Electrodeposition of Copper

Electrochemical and Solid-State Letters, 2001
A model of superconformal electrodeposition is presented based on a local growth velocity that is proportional to coverage of a catalytic species at the metal/electrolyte interface. The catalyst accumulates at the interface through reaction with the electrolyte.
T. P. Moffat, D. Wheeler, W. H. Huber, D. Josell   +3 more
openaire   +1 more source

Electrical resistance of planar copper electrodeposits

Physical Review A, 1989
Mesure directe, en courant alternatif, de la variation de la resistance electrique de depots electrolytiques de cuivre dans un support en papier, en fonction de la tension de depot.
, Melrose, , Hibbert
openaire   +2 more sources

Self-affine growth of copper electrodeposits

Physical Review B, 1993
We have studied the static surface roughness of 50-μm-thick copper electrodeposits on length scales between 5 and 10 4 nm using scanning tunneling and atomic force microscopy. The surface roughness depends strongly on the concentration of organic additives in the plating solution.
, Iwasaki, , Yoshinobu
openaire   +2 more sources

Dissolution from electrodeposited copper–cobalt–copper sandwiches

Journal of Applied Electrochemistry, 2004
The electrochemical behaviour of electrodeposited Co–Cu/Cu multilayers from citrate electrolytes was investigated using cyclic voltammetry and stripping techniques at a rotating ring disc electrode. Copper and cobalt–copper alloy sandwiches were deposited from an electrolyte containing 0.0125 M CuSO4, 0.250 M CoSO4 and 0.265 M trisodium citrate at two ...
Dulal SMSI, Charles EA, Roy S
openaire   +2 more sources

Anisotropic Copper Electrodeposition on Microelectrodes

ECS Meeting Abstracts, 2020
Copper electrodeposition is critical to electronics manufacturing, ranging across lengthscales from nanometer damascene plating to 100s of micrometers for through-silicon-vias in 3D interconnect packaging and even millimeter-scale in printed circuit board manufacturing.
Trevor Michael Braun, Thomas P Moffat
openaire   +1 more source

Copper electrodeposition on silicon electrodes

International Journal of Surface Science and Engineering, 2018
A two-step process is reported for the electrochemical deposition of copper layers on n-type silicon substrates using an acidic copper sulphate solution without addition of additives and no light assistance. Metal layers were generated on electrodes with different crystal orientations. The process consists of a combination of two very common techniques:
Lima, F., Mescheder, U., Müller, C., Reinecke, H.   +3 more
openaire   +2 more sources

Anionic Impurities in Electrodeposited Copper

Transactions of the IMF, 1972
SummaryIn the electrodeposition of copper at the cathode, the anionic impurities codeposited with the metal are derived from the plating solution. The variation of these impurities has been studied as a function of current density, temperature, pH, and composition of the bath.
R. D. Srivastava, S. Kumar
openaire   +1 more source

Strengthening bulk gold–copper electrodeposits

Journal of Vacuum Science and Technology, 1974
The effects of burnishing and chemical composition on the structure and mechanical properties of bulk gold–copper electrodeposits were studied. After developing quantitative electron microscopic methods, microstructure-calorimetric and mechanical property correlations were obtained.
Daniel L. Stoltz, Allan H. Rahe, John J. Hren   +2 more
openaire   +1 more source

5 Minutes TSV copper electrodeposition

2014 9th International Microsystems, Packaging, Assembly and Circuits Technology Conference (IMPACT), 2014
TSV(Through Silicon Via) is promising interconnection for the next generation smartphone, driving assistance and medical care system because of its ability of high speed image processing and low energy consumption. Conventional TSV electrodeposition requires several 10 minutes to hour because of applying small current of less than 10 mA/cm2.
Kazuo Kondo, Chikara Funahashi, Taro Hayashi, Masayuki Yokoi, Naoki Okamoto, Takeyasu Saito   +5 more
openaire   +1 more source