Results 1 to 10 of about 31,177 (269)

Design of a CMOS Image Sensor with Bi-Directional Gamma-Corrected Digital-Correlated Double Sampling [PDF]

Sensors, 2023
We present a 640 × 480 CMOS image sensor (CIS) with in-circuit bi-directional gamma correction with a proposed digital-correlated double sampling (CDS) structure.
Jaehee Cho, Hyunseon Choo, Suhyeon Lee, Seungju Yoon, Gyuwon Kam, Sooyoun Kim   +5 more
doaj   +3 more sources

Design of Low-Noise CMOS Image Sensor Using a Hybrid-Correlated Multiple Sampling Technique [PDF]

Sensors, 2023
We present a 320 × 240 CMOS image sensor (CIS) using the proposed hybrid-correlated multiple sampling (HMS) technique with an adaptive dual-gain analog-to-digital converter (ADC). The proposed HMS improves the noise characteristics under low illumination
Seung Ju Youn, Su Yeon Yun, Hoyeon Lee, Kwang Jin Park, Jiwon Kim, Soo Youn Kim   +5 more
doaj   +2 more sources

Improvement in Random Noise for Pixel-Parallel Single-Slope ADC with Consideration of Flicker Noise Effect [PDF]

Sensors
We propose and demonstrate a low-random-noise (RN) design for pixel-parallel single-slope ADCs (SS-ADCs), achieving 2.2 e-rms in a 3.24 µm pixel. In this paper, we discuss AC-based RN estimation with respect to the comparator bias current and a bandwidth-
Masayuki Uno, Kwuang-Han Chang, Tsung-Hsun Tsai, Junichi Nakamura, Rimon Ikeno, Kazuya Mori, Ken Miyauchi, Toshiyuki Isozaki, Yi-Hsuan Lin, Sheng-Yeh Lai, Chih-Hao Lin, Wei-Fan Chou, Guang Yang, Song Chen, Chiao Liu   +14 more
doaj   +2 more sources

Operation Under High Ionizing Dose Rates of Gamma or X-Ray Radiation of a 10 µm Radiation Tolerant Global Shutter Pixel [PDF]

Sensors
A 10 × 10 µm2 radiation-tolerant voltage-domain global shutter pixel with radiation-hardened by design (RHBD) device modification is developed to operate under high ionizing-dose rates and high total ionizing-dose (TID) levels. Therefore, a modified NMOS
Pedro Santos, Idham Hafizh, Paul Leroux, Guy Meynants   +3 more
doaj   +2 more sources

Wide-Dynamic-Range Lead-Free SWIR Image Sensors Based on InAs Thin-Film Quantum-Dot Photodiodes ^† [PDF]

Sensors
This work presents a monolithically integrated short-wavelength infrared (SWIR) image sensor based on indium arsenide (InAs) quantum dot photodiodes (QDPDs).
Myonglae Chu, Wenya Song, Joo Hyoung Kim, Tristan Weydts, Vladimir Pejovic, Jiwon Lee, Minhyun Jin, Sang Yeon Lee, Yoora Seo, Hyunyoung Yoo, Jonas Bentell, Abu Bakar Siddik, Isabel Pintor Monroy, Marina Vildanova, Arman Uz Zaman, Tae Jin Yoo, Antonia Malainou, Wagdy Hussein, Annachiara Spagnolo, Gauri Karve, Itai Lieberman, Stefano Guerrieri, Pawel E. Malinowski   +22 more
doaj   +2 more sources

Charge-Domain Type 2.2 µm BSI Global Shutter Pixel with Dual-Depth DTI Produced by Thick-Film Epitaxial Process [PDF]

Sensors
We developed a 2.2 µm backside-illuminated (BSI) global shutter (GS) pixel featuring true charge-domain-correlated double sampling (CDS). To enhance the inverse parasitic light sensitivity (1/PLS), we implemented a thick-film epitaxial process ...
Toshifumi Yokoyama, Masafumi Tsutsui, Yoshiaki Nishi, Yoshihiro Noguchi, Masahiko Takeuchi, Masahiro Oda, Fenigstein Amos   +6 more
doaj   +2 more sources

Development of a High Performance 1280×1024 InGaAs SWIR FPA Detector at Room Temperature

Frontiers in Physics, 2021
A 1280 × 1,024 In0.53Ga0.47As short wave infrared (SWIR) focal plane array (FPA) detector with a planar-type back-illuminated process has been fabricated.
Jia-Xin Zhang, Jia-Xin Zhang, Jia-Xin Zhang, Wei Wang, Wei Wang, Wei Wang, Zai-Bo Li, Zai-Bo Li, Hai-Feng Ye, Hai-Feng Ye, Run-Yu Huang, Run-Yu Huang, Ze-Peng Hou, Ze-Peng Hou, Hui Zeng, Hui Zeng, Hong-xia Zhu, Hong-xia Zhu, Chen Liu, Chen Liu, Xue-Yan Yang, Xue-Yan Yang, Yan-Li Shi, Yan-Li Shi   +23 more
doaj   +1 more source

Over 100 Million Frames per Second 368 Frames Global Shutter Burst CMOS Image Sensor with Pixel-wise Trench Capacitor Memory Array

Sensors, 2020
In this paper, a prototype ultra-high speed global shutter complementary metal-oxide-semiconductor (CMOS) image sensor with pixel-wise trench capacitor memory array achieving over 100 million frames per second (fps) with up to 368 record length by burst ...
Manabu Suzuki, Yuki Sugama, Rihito Kuroda, Shigetoshi Sugawa   +3 more
doaj   +1 more source

High-Linearity and High-Speed ROIC of Ultra-Large Array Infrared Detectors Based on Adaptive Compensation and Enhancement

Sensors, 2023
In order to solve the problem of limited linearity and frame rate in the large array infrared (IR) readout integrated circuit (ROIC), a high-linearity and high-speed readout method based on adaptive offset compensation and alternating current (AC ...
Zhongjie Guo, Bin Wang, Suiyang Liu, Ruiming Xu, Ningmei Yu   +4 more
doaj   +1 more source

CMOS Image Sensor Random Telegraph Noise Time Constant Extraction From Correlated To Uncorrelated Double Sampling

IEEE Journal of the Electron Devices Society, 2017
A new method for on-chip random telegraph noise (RTN) characteristic time constant extraction using the double sampling circuit in an 8.3 Mpixel CMOS image sensor is described.
Calvin Yi-Ping Chao, Honyih Tu, Thomas Wu, Kuo-Yu Chou, Shang-Fu Yeh, Fu-Lung Hsueh   +5 more
doaj   +1 more source