Results 231 to 239 of about 4,735,354 (239)

Wafer‐Scale Direct Growth of Ultraclean Monolayer Amorphous Carbon on c‐Sapphire by Remote Catalytic Dehydrogenation

Advanced Materials, EarlyView.
Remote catalytic dehydrogenation enables the direct growth of monolayer amorphous carbon on a 2‐inch sapphire wafer by thermal CVD. Spatial separation of the catalyst from the growth substrate eliminates metallic residue and post‐growth processing, yielding a wafer‐scale uniform film with a random polygonal sp2‐hybridized carbon network that exhibits ...
Muhammad Sabbtain Abbas, Imhwan Kim, Seokje Lee, Yasir Hassan, Jihwan Kim, Eunsu Lee, Han Ik Kim, Yoonkang Kim, Gyu‐Chul Yi   +8 more
wiley   +1 more source

Design of High‐Energy Anode for All‐Solid‐State Lithium Batteries–A Model with Borohydride‐Based Electrolytes

Advanced Materials Interfaces, EarlyView.
This study proposes a function‐sharing anode design to enable nonmetallic lithium insertion while maintaining intimate interfacial contact with the solid‐state electrolyte. A combination of lithium‐compatible and conformable borohydrides, highly conformable indium metal, less‐graphitized acetylene black, and a layer of highly graphitized massive ...
Keita Kurigami, Akihiro Ishii, Itaru Oikawa, Hitoshi Takamura   +3 more
wiley   +1 more source

Conformal Coating and Transfer of 2D Nanomaterials via Dynamic Interface Engineering

Advanced Materials Interfaces, EarlyView.
This review discusses conformal coating and transfer of two‐dimensional (2D) nanomaterials with a focus on dynamic interface engineering. By actively regulating nanosheet transport and interfacial contact during film formation, recent dynamic coating strategies overcome the limitations of conventional passive approaches and enable geometry‐adaptive ...
Seungyeon Kim, Euihoon Jeong, Seoung‐Ki Lee, Sukang Bae, Tae‐Wook Kim   +4 more
wiley   +1 more source

Spontaneous Nanopatterning and Strain Relaxation in SiGe Layers Grown by Oxidative Solid‐Phase Epitaxy

Advanced Materials Interfaces, EarlyView.
Thin SiGe buffer layers are grown by oxidative solid‐phase epitaxy, resulting in a nanopatterning of varying Ge concentration across the surface of the sample. The nanopatterning is caused by a hexagonal network of dislocations on the SiGe/Si(111) interface, and is visible by scanning electron microscopy, providing a non‐destructive method for ...
Sophie E. Bierer, Trevor R. Smith, Arezoo Mafi, Sunzhuoran Wang, Chengqian Liao, Vatsalkumar Patel, Andrew P. Knights, Ryan B. Lewis   +7 more
wiley   +1 more source

Some of the next articles are maybe not open access.

Related searches:

A PROBABILITY MODEL FOR CROSS–CONTAMINATION BY CAMPYLOBACTER JEJUNI AND SALMONELLA TYPHIMURIUM IN POULTRY CHILLING PROCESS

Applied Engineering in Agriculture, 2002
The cross–contamination by Campylobacter jejuni and Salmonella Typhimurium in a poultry chiller presents a challenge to the poultry industry. The purpose of this research was to develop a predictive model for the probability of C. jejuni and S. Typhimurium contamination on chicken carcasses during chilling.
null H. Yang, null Y. Li, null C. L. Griffis, null A. L. Waldroup   +3 more
openaire   +1 more source