Results 101 to 110 of about 5,398 (227)
Electronic and optical properties of substitutional V, Cr and Ir impurities in Cu2ZnSnS4 [PDF]
, 2014 The substitution of cation atoms by V, Cr and It in the natural and synthetic quaternary Cu2ZnSnS4 semiconductor is analyzed using first-principles methods.
Tablero Crespo, César
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Optical and electrical properties study of sol-gel derived Cu2ZnSnS4 thin films for solar cells
AIP Advances, 2014 The fabrication of environmental-friendly Cu2ZnSnS4 (CZTS) thin films with pure kesterite phase is always a challenge to researchers in the field of solar cells.
B. L. Guo +4 more
doaj +1 more source
Ionization energies of amphoteric-doped Cu2ZnSnS4: Photovoltaic application [PDF]
, 2014 The substitution of Cu, Sn or Zn in the quaternary Cu2ZnSnS4 semiconductor by impurities that introduce intermediate states in the energy bandgap could have important implications either for photovoltaic or spintronic applications.
Tablero Crespo, César
core +2 more sources
Preparation and photocatalytic properties of Cu2ZnSnS4 for H2 production
Materials Research Express, 2020 Cu _2 ZnSnS _4 (CZTS) thin film photocatalytic water splitting for hydrogen production under visible light irradiation has been reported together with CZTS nanoparticles prepared by ultrasonic spray pyrolysis and hydrothermal method, respectively.
Jiansheng Wang +3 more
doaj +1 more source
Cu2ZnSnS4 thin film solar cells grown by fast thermal evaporation and thermal treatment [PDF]
, 2018 Cu2ZnSnS4 thin films have been produced via rapid thermal evaporation of off-stoichiometric kesterite powder followed by annealing in an Ar atmosphere. Different heating rates were applied during the thermal treatments.
Caballero, Raquel +11 more
core +1 more source
APL Materials, 2017 The depth distribution of secondary phases in the solar cell absorber material Cu2ZnSnS4 (CZTS) is quantitatively investigated using X-ray Absorption Near Edge Structure (XANES) analysis at the K-edge of sulfur at varying incidence angles.
J. Just +4 more
doaj +1 more source
The order-disorder transition in Cu2ZnSnS4 – A neutron scattering investigation
Journal of Solid State Chemistry, 2016 Abstract In this work a series of stoichiometric Cu2ZnSnS4 (CZTS) samples annealed at different temperatures in the range of 473–623 K were investigated. The temperature dependence of the Cu/Zn-order-disorder behavior was analyzed by neutron powder diffraction measurements.
Ritscher, A., Hoelzel, M., Lerch, M.
openaire +2 more sources
International Journal of Photoenergy, 2012 Cu2ZnSnS4 (CZTS) has attracted much attention recently as an absorber layer material in a heterojunction solar cell. Using the first-principles method, we calculate the band offsets for the CdS/CZTS heterojunction.
Wujisiguleng Bao, Masaya Ichimura
doaj +1 more source
International Journal of Photoenergy, 2015 The influence of secondary phases of ZnS and Cu2SnS3 (CTS) in Cu2ZnSnS4 (CZTS) absorber material has been studied by calculating the band offsets at the CTS/CZTS/ZnS multilayer heterojunction interfaces on the basis of the first principles band structure
Wujisiguleng Bao, Masaya Ichimura
doaj +1 more source
Raman study of flash-lamp annealed aqueous Cu2ZnSnS4 nanocrystals
Beilstein Journal of Nanotechnology, 2019 The effect of flash-lamp annealing (FLA) on the re-crystallization of thin films made of colloidal Cu2ZnSnS4 nanocrystals (NCs) is investigated by Raman spectroscopy.
Yevhenii Havryliuk +7 more
doaj +1 more source