Results 151 to 160 of about 5,965 (198)
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Refractive indices of CuInSe2, CuInSe2 and CuGaTe2
Physics Letters A, 1980Abstract Refractive index dispersion in the photon energy range from 0.5 eV to the fundamental gap energy is determined for CuInSe2, CuInTe2 and CuGaTe2 by measuring and analysing optical transmission spectra of thin films. Control measurements on GaAs thin films demonstrate the reliability of the method.
W. Hörig +3 more
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Journal of Physics and Chemistry of Solids, 2003
Abstract The surface of vaccum-cleaved and oxidized CuInSe 2 single crystals with different deviations from ideal stoichiometry and oxidized CuGaSe 2 thin films were exposed to low energy hydrogen ions (300 eV). Besides the removal of surface contaminations within a short exposure time as studied by X-ray photoelectron spectroscopy, this process ...
K. Otte +3 more
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Abstract The surface of vaccum-cleaved and oxidized CuInSe 2 single crystals with different deviations from ideal stoichiometry and oxidized CuGaSe 2 thin films were exposed to low energy hydrogen ions (300 eV). Besides the removal of surface contaminations within a short exposure time as studied by X-ray photoelectron spectroscopy, this process ...
K. Otte +3 more
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Solar Cells, 1991
Abstract This paper reviews the status of CuInSe 2 (CIS) module development. The potential of CIS for high power, thin film photovoltaic modules is demonstrated by the achievement of 14.1% active area cell efficiencies and unlaminated module power outputs of 10.5 W (11.2% aperture efficiency) on 940 cm 2 modules and 37.8 W (9.7% aperture efficiency)
K.W. Mitchell +5 more
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Abstract This paper reviews the status of CuInSe 2 (CIS) module development. The potential of CIS for high power, thin film photovoltaic modules is demonstrated by the achievement of 14.1% active area cell efficiencies and unlaminated module power outputs of 10.5 W (11.2% aperture efficiency) on 940 cm 2 modules and 37.8 W (9.7% aperture efficiency)
K.W. Mitchell +5 more
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Solar Cells, 1988
Abstract The deposition of CuInSe 2 thin films by co-sputtering from copper and indium planar magnetron sputtering sources in a working gas of argon plus H 2 Se is being investigated. Near-stoichiometric coatings deposited onto glass and molybdenum-coated substrates have been found to have resistivities, Hall mobilities, absorption coefficients ...
John A. Thornton +3 more
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Abstract The deposition of CuInSe 2 thin films by co-sputtering from copper and indium planar magnetron sputtering sources in a working gas of argon plus H 2 Se is being investigated. Near-stoichiometric coatings deposited onto glass and molybdenum-coated substrates have been found to have resistivities, Hall mobilities, absorption coefficients ...
John A. Thornton +3 more
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Optical and electrochemical properties of CuInSe2 and CuInS2-CuInSe2 alloys
Applied Physics Letters, 1985The fundamental optical transitions in single crystals of CuInS2xSe2−2x alloys have been studied by electrolyte electroreflectance (EER) spectroscopy. The band gap of the alloys increases nonlinearly with increasing sulphur content corresponding to a bowing parameter 0.14.
H. Neff +3 more
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Photoelectromagnetic effect in CuInSe2
Journal of Applied Physics, 1977The photoelectromagnetic effect is studied in single crystals of CuInSe2. A region of light excitation is found in which the dependence of iPEM on light intensity is linear. From the experimental data, a lifetime of the minority carriers τn=0.6×10−9 sec and a surface recombination velocity s=3×105 cm/sec are determined.
S. Mora, N. Romeo
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The role of oxygen in CuInSe2 thin films and CdS/CuInSe2 devices
Solar Cells, 1986Abstract The solar cell device CdS/CuInSe2 has been shown to require a post-treatment in air at about 200 °C to reach its state-of-the-art efficiency of close to 11%. We have shown that treating the device in a solution of chemical oxidants has the same effect as the annealing in air. The results of oxidation can be reversed by treating the device in
R. Noufi +3 more
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Photoconductivity in CuInSe2 films
Solar Energy Materials and Solar Cells, 1994Abstract CulnSe2 films with different Cu/In ratios (0.4–1.2) were deposited on glass substrates by three source evaporation techniques. The films were polycrystalline in nature with partially depleted grains. Photoconductivity in the films was measured in the temperature range 170–370 K.
R. Pal +3 more
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n-CuInSe2 photoelectrochemical cells
Solar Cells, 1986Abstract The results of a wide research program, aimed at improving the conversion efficiency of n-CuInSe2/liquid electrolyte solar cells, while maintaining the stability exhibited by this material in aqueous polysulfide, are described. Aqueous polyiodide is chosen as the electrolyte, on the basis of comparative studies with a number of aqueous and ...
David Cahen +6 more
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Junction electroluminescence in CuInSe2
Applied Physics Letters, 1974We report the first observation of homojunction electroluminescence in a ternary chalcopyrite compound. Diffused junctions in CuInSe2 emit in a narrow band near 1.34 μ with an internal quantum efficiency of ∼10% at 77°K and ∼0.1% at room temperature.
P. Migliorato +3 more
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