Results 61 to 70 of about 57,647 (265)

Oxygen‐Tunnel Indium Tin Oxide Vertical Channel Transistors with Enhanced Current Density and Reliability for Monolithic 3D Compute‐In‐Memory Systems

Advanced Functional Materials, EarlyView.
Oxygen‐tunnel (OT) indium tin oxide (ITO) vertical channel transistors (VCTs) enable reliable, high‐density gain‐cell memory for monolithic 3D integration. A sandwiched SiN/SiO2/SiN OT stack selectively regulates oxygen transport, suppressing parasitic electrode oxidation while stabilizing channel oxygen vacancies, thereby suppressing carrier injection
Hyeonho Gu, Haksoon Jung, Yongwoo Lee, Hoichang Jeong, Yanfeng Zhao, Heesoo Yang, Minho Park, Hyeonjin Lee, Seunghun Baek, Minju Song, Junghwan Kim, Youngmin Jo, Hyunjin Park, Munhyeon Kim, Jae‐Joon Kim, Kyuho Jason Lee, Byungjo Kim, Jimin Kwon   +17 more
wiley   +1 more source

Realization of Novel Cascadable Current-Mode All-pass Sections

Iranian Journal of Electrical and Electronic Engineering, 2018
This paper introduces four new resistorless circuits of first-order current-mode all-pass filter (CMAPF) based on dual-X current conveyor transconductance amplifier (DXCCTA). All the four circuits use a single DXCCTA and a capacitor for their realization.
A. Kumar, B. Chaturvedi
doaj  

Regulated Ion‐Diffusion Hydrogels for Subtle and Multimodal Temperature‐Strain Sensing in Wound Monitoring

Advanced Functional Materials, EarlyView.
A soft, dual‐channel hydrogel patch enables simultaneous detection of wound temperature and strain by integrating ion‐diffusion‐mediated thermoelectric and resistive sensing. The conformal design maintains stable performance during motion, capturing subtle inflammatory and mechanical changes for continuous wound monitoring.
Yu Fang, Xinglong Pan, Zhiwei Li, Wanheng Lu, Chang Liu, Yi Zhou, Guo Tian, Ghim Wei Ho   +7 more
wiley   +1 more source

ON THE DESIGN OF NEW CMOS DO-OTA TOPOLOGIES PROVIDING HIGH OUTPUT IMPEDANCE AND EXTENDED LINEARITY RANGE

Electrica, 2005
In this paper, new realization techniques to enhance the performance of the CMOS differential output transconductance amplifiers (DO-OTAs) are proposed by combining the high-performance input and output stages given in the literature.
Burçin Serter Ergün, H. Hakan Kuntman
doaj   +2 more sources

Current and Voltage Mode Quadrature Oscillator Based on Voltage Differencing Buffered Amplifier

Electrica, 2018
In this work, we presenta current-mode and voltage-mode quadrature oscillator circuit using a voltagedifferencing buffered amplifier (VDBA), two grounded capacitors, and a groundedresistor.
Abdullah Yeşil, Fırat Kaçar
doaj   +1 more source

Fully Additive Vertical Organic Electrochemical Transistors on Renewable and Compostable Substrates Enable Ultrasensitive Bioelectronics

Advanced Functional Materials, EarlyView.
Fully additive vertical organic electrochemical transistors (vOECTs) with channel‐length of 226 nm on a 50 µm compostable substrate achieve >106 current modulation and ∼36 mS transconductance. Ion‐selective integration enables 1.1 mA dec−1 sensitivity and 36 µm detection limit, highlighting a scalable platform for sustainable electronics and ...
Giulia Frusconi, Samuele Lavelli, Zsolt M. Kovács‐Vajna, Fabrizio Torricelli   +3 more
wiley   +1 more source

Voltage/Current-Mode Multifunction Filters Using Current-Feedback Amplifiers and Grounded Capacitors

Active and Passive Electronic Components, 2010
One configuration for realizing voltage-mode multifunction filters and another configuration for realizing current-mode multifunction filters each using two current-feedback amplifiers (CFAs) are presented.
Jiun Wei Horng, Pei-Young Chou, Jian-Yu Wu   +2 more
doaj   +1 more source

Omnipolar Magnetic Field Detection by Superlattice‐Based Hall Sensor

Advanced Functional Materials, EarlyView.
Magnetic‐field‐induced electronic switching is demonstrated in unit‐cell‐engineered La0.7Sr0.3MnO3–BiFeO3 superlattices. Distinct substrate terminations modify magnetic and transport properties. Hall resistance measurements show omnipolar, hysteretic anomalous Hall switching above the Curie temperature, arising from Fe─Mn interfacial exchange, enabling
Mark Huijben, Nicolas Gauquelin, Arno Annys, Zhaoliang Liao, Jo Verbeeck, Guus Rijnders, Gertjan Koster   +6 more
wiley   +1 more source