Results 71 to 80 of about 1,965 (210)
One of the major reasons for a recent stuck of the development of kesterite based photovoltaic devices is related to the problems in their open circuit voltage. Several limitations can be pointed out as a possible origin.
Maxim Guc +5 more
doaj +1 more source
Enhanced external quantum efficiency from Cu2ZnSn(S,Se)4 solar cells prepared from nanoparticle inks [PDF]
Cu2ZnSn(S,Se)4 (CZTSSe) thin film photovoltaic absorber layers are fabricated by selenizing Cu2ZnSnS4 (CZTS) nanoparticle thin films in a selenium rich atmosphere.
Beattie, Neil +4 more
core +1 more source
Analysis of the Voltage Losses in CZTSSe Solar Cells of Varying Sn Content [PDF]
The performance of kesterite (Cu2ZnSn(S,Se)4, CZTSSe) solar cells is hindered by low open circuit voltage ( Voc). The commonly used metric for Voc-deficit, namely, the difference between the absorber band gap and qVoc, is not well-defined for compositionally complex absorbers like kesterite where the bandgap is hard to determine.
Mohammed Azzouzi +6 more
openaire +5 more sources
In this study, we conducted an investigation on the Cu2ZnSnS4 (CZTS) kësterite compound, which is considered an attractive material for its favorable absorption properties, making it a suitable semiconductor for photovoltaic applications.
Aka Hyacinthe Aka +3 more
doaj +1 more source
Cu2ZnSnS4 thin film solar cells grown by fast thermal evaporation and thermal treatment [PDF]
Cu2ZnSnS4 thin films have been produced via rapid thermal evaporation of off-stoichiometric kesterite powder followed by annealing in an Ar atmosphere. Different heating rates were applied during the thermal treatments.
Caballero, Raquel +11 more
core +1 more source
DFT Modeling and Impedance Spectroscopy Analysis of a High Performance Zirconia‐Based Solar Cell
p‐SnS/n‐CdS heterojunction solar cells with Al‐ZnO/i‐ZnO window layers simulated using SCAPS‐1D and impedance spectroscopy enabled tracking of solar cell parameters. The optimal performance (η = 22.76%, Voc = 0.77 V) was achieved with a 5 µm SnS absorber at Rs = 1Ω.cm−2 and Rsh = 10 kΩ.cm−2.
George G. Njema +7 more
wiley +1 more source
Controlled Li Alloying of CZTSSe Absorbers by Electrochemical Treatment
Oral presentation at 2023 MRS Spring ...
Moser, Simon +4 more
openaire +2 more sources
CdCl2 Treatment for Cu2ZnSn(S,Se)4: A Method to Enhance the Solar Cell Performance
We present, for the first time, two alternative CdCl2 treatments applied to solution‐processed kesterite (CZTSSe) absorbers: pre‐selenization and post‐selenization. Carrier concentration is consistently increased by either route, whereas the band gap decreases with pre‐selenization but remains nearly constant with post‐selenization; enhanced defect ...
Prabeesh Punathil +9 more
wiley +1 more source
Raman mapping analysis for removal of surface secondary phases of CZTS films using chemical etching [PDF]
Raman spectroscopy has been widely used as a non-destructive surface characterization method for the Cu 2ZnSnS4 (CZTS) thin films. Secondary phases, which often co-exist with CZTS, are detrimental to the device performance.
Trystan Watson, Wing Chung Tsoi
core +1 more source
Metastable defect response in CZTSSe from admittance spectroscopy
Admittance spectroscopy is a useful tool used to study defects in semiconductor materials. However, metastable defect responses in non-ideal semiconductors can greatly impact the measurement and therefore the interpretation of results. Here, admittance spectroscopy was performed on Cu2ZnSn(S,Se)4 where metastable defect response is illustrated due to ...
Mark J. Koeper +4 more
openaire +2 more sources

