Results 101 to 110 of about 2,950,870 (336)

Combination Optimization Configuration Method of Capacitance and Resistance Devices for Suppressing DC Bias in Transformers

Energies, 2019
The ground current of a high-voltage direct current (HVDC) transmission system can cause DC bias in transformers near the grounding electrode during monopole operations, which affects the alternating current (AC) power system operation. Owing to multiple
Donghui Wang, Chunming Liu
doaj   +1 more source

Magnetically coupled emission regulator [PDF]

, 1969
Magnetic coupling between input and power handling circuits isolates high voltage. A feedback regulator samples the ion source bias current and provides deviation signals to a magnetic amplifier pulse modulator.

core   +1 more source

Universality of the Kondo Effect in a Quantum Dot out of Equilibrium

, 2000
We study the Kondo effect in a quantum dot driven out of equilibrium by an external ac field. The Kondo effect can be probed by measuring the dc current induced by an auxiliary dc bias $V_{dc}$ applied across the dot.
Glazman, L. I., Kaminski, A., Nazarov, Yu. V.   +2 more
core   +2 more sources

Intermediate Resistive State in Wafer‐Scale Vertical MoS2 Memristors Through Lateral Silver Filament Growth for Artificial Synapse Applications

Advanced Functional Materials, EarlyView.
In MOCVD MoS2 memristors, a current compliance‐regulated Ag filament mechanism is revealed. The filament ruptures spontaneously during volatile switching, while subsequent growth proceeds vertically through the MoS2 layers and then laterally along the van der Waals gaps during nonvolatile switching.
Yuan Fa, Milan Buttberg, Ke Ran, Rana Walied Ahmad, Dennis Braun, Lukas Völkel, Jimin Lee, Sofía Cruces, Bart Macco, Bárbara Canto, Holger Lerch, Thorsten Wahlbrink, Holger Kalisch, Michael Heuken, Andrei Vescan, Joachim Mayer, Zhenxing Wang, Ilia Valov, Stephan Menzel, Max C. Lemme   +19 more
wiley   +1 more source

Nontrivial dependence of dielectric stiffness and SHG on dc bias in relaxors and dipole glasses

, 2004
Dielectric permittivity and Second Harmonic Generation (SHG) studies in the field-cooled mode show a linear dependence of dielectric stiffness (inverse dielectric permittivity) on dc bias in PMN-PT crystals and SHG intensity in KTaO$_{3}$:Li at small Li ...
A. S. Emelyanov, Chu F., Colla E. V., Eden S., Emel’yanov S. M., Eugene V. Colla, I. P. Raevski, J-L. Dellis, L. Jastrabik, M. El Marssi, Patashinski A. Z., Raevski I. P., S. A. Prosandeev, S. E. Kapphan, Sakudo T., Vaks V. G.   +15 more
core   +1 more source

Integration of Low‐Voltage Nanoscale MoS2 Memristors on CMOS Microchips

Advanced Functional Materials, EarlyView.
This article presents the first monolithic integration of nanoscale MoS2‐based memristors into the back‐end‐of‐line of foundry‐fabricated CMOS microchips in a one‐transistor‐one‐resistor (1T1R) architecture. The MoS2‐based 1T1R cells exhibit forming‐free, nonvolatile resistive switching with ultra‐low operating voltages, low cycle‐to‐cycle variability ...
Jimin Lee, Sofía Cruces, Xiaohua Liu, Yang Chen, Vasilis A. Maroufidis, Janghyun Jo, Lukas Völkel, Dennis Braun, Michael Möller, Leon Brackmann, Holger Kalisch, Michael Heuken, Andrei Vescan, Rafal E. Dunin‐Borkowski, Joachim Mayer, Stefan Wiefels, Max C. Lemme   +16 more
wiley   +1 more source

Electrical detection of ferromagnetic resonance in ferromagnet/n-GaAs heterostructures by tunneling anisotropic magnetoresistance

, 2014
We observe a dc voltage peak at ferromagnetic resonance (FMR) in samples consisting of a single ferromagnetic (FM) layer grown epitaxially on the $\mathit{n-}$GaAs (001) surface.
Boyko, Yakov, Christie, Kevin, Crowell, Paul, Geppert, Chad, Liu, Changjiang, Palmstrøm, Chris, Patel, Sahil, Stecklein, Gordon   +7 more
core   +1 more source

A New Threshold Switching Device With Tunable Negative Differential Resistance Based on ErMnO3 Polymorphs

Advanced Functional Materials, EarlyView.
Polymorph engineering in ErMnO3 enables low‐voltage, forming‐free threshold switching with tunable negative differential resistance. Conducting orthorhombic regions embedded in an insulating hexagonal matrix provide controlled Joule‐heating‐enhanced Poole–Frenkel transport. The hexagonal phase prevents excessive heating and breakdown.
Rong Wu, Florian Maudet, Thanh Luan Phan, Wassim Hamouda, Richard Schroedter, Ahmet Samil Demirkol, Ronald Tetzlaff, Veeresh Deshpande, Catherine Dubourdieu   +8 more
wiley   +1 more source

Effects of AC- and DC-bias field poling on piezoelectric properties of Bi-based ceramics

Journal of the Ceramic Society of Japan, 2019
The structural and electrical properties of 0.75BiFeO3­0.25BaTiO3 (BF25BT) ceramics, with and without heat treatment, were investigated. The polished and cut BF25BT ceramics were thermally annealed at 800°C for 20 h and then quenched in water at room ...
Sangwook Kim, G. Khanal, Hyunwook Nam, I. Fujii, S. Ueno, S. Wada   +5 more
semanticscholar   +1 more source

2D Magnetic and Topological Quantum Materials and Devices for Ultralow Power Spintronics

Advanced Functional Materials, EarlyView.
2D magnets and topological quantum materials enable ultralow‐power spintronics by combining robust magnetic order with symmetry‐protected, Berry‐curvature‐driven transport. Fundamentals of 2D anisotropy and spin‐orbit‐coupling induced band inversion are linked to scalable growth and vdW stacking.
Brahmdutta Dixit, Yifei Yang, Shawn Li, Yu‐Chia Chen, Qi Jia, Jian‐Ping Wang   +5 more
wiley   +1 more source