Results 121 to 130 of about 1,675,720 (296)

APTES‐Mediated Ti‐Squarate MOF/n‐GaN Nanowire Photoanodes for Efficient Photoelectrochemical Water Splitting

open access: yesAdvanced Functional Materials, EarlyView.
The APTES linker establishes a permanent interfacial dipole, reducing the work function of n‐GaN from 3.55 to 3.29 eV. This strengthens the built‐in electric field, significantly accelerating hole extraction to drive the oxygen evolution reaction (OER). Ultimately, this tailored charge‐separation architecture achieves a remarkable 4.78‐fold enhancement
Jeong‐Kyun Oh   +15 more
wiley   +1 more source

Proximity‐Tuned Magnetic and Transport Anomalies in All‐Epitaxial Fe5−xGeTe2/WSe2 Van der Waals Heterostructures

open access: yesAdvanced Functional Materials, EarlyView.
All‐epitaxial and scalable ferromagnetic/non‐magnetic Fe5−xGeTe2/WSe2 van der Waals (vdW) heterostructures exhibiting room‐temperature magnetism and perpendicular magnetic anisotropy (PMA) are realized. The system displays proximity‐tuned magnetic anisotropy, thickness‐dependent unconventional Hall effects, and temperature‐dependent sign reversal of ...
Hua Lv   +15 more
wiley   +1 more source

Exceptional Electro‐Optic Coefficient Unlocked via Polarization Swaying in KNbO3 Thin Films

open access: yesAdvanced Functional Materials, EarlyView.
We present the largest reported electro‐optic response in any material to date, guided by a new design principle that exploits ultralow coercive field polarization swaying enabled by low‐symmetry ferroelectric phases in monoclinic KNbO3 thin films for energy‐efficient classical and quantum photonic integrated circuits. ABSTRACT The electro‐optic effect
Sankalpa Hazra   +11 more
wiley   +1 more source

Extrapolation Ability of Denoising Diffusion Probabilistic Models for High-Frequency Inductor Core Loss Predictions With DC Bias

open access: yesIEEE Access
Accurate prediction of high-frequency magnetic core losses under DC bias conditions remains a critical challenge in power electronics design. Conventional models, such as empirical curve-fitting approaches and neural networks, often struggle with ...
Xuezhen Yang   +3 more
doaj   +1 more source

Low‐Flicker‐Noise MoS2 Transistors Enabled by High‐κ Rare‐Earth Oxychlorides for Mixed‐Signal Electronics

open access: yesAdvanced Functional Materials, EarlyView.
Single‐crystalline LaOCl and GdOCl form atomically abrupt, Cl‐terminated interfaces with MoS2, enabling near‐ideal switching and suppressed flicker noise. Carrier‐number‐fluctuation analysis yields effective noise‐derived interface trap densities of 1.15–1.94 × 1010 cm−2 eV−1, approaching hexagonal boron nitride levels with high‐κ coupling.
Chanho Lee   +10 more
wiley   +1 more source

Plasmonic Characteristics of TiN Layers Deposited by ECWR Assisted MF Magnetron Sputtering

open access: yesAdvanced Physics Research
This study investigates the plasmonic properties of TiN thin films deposited by pulsed mid‐frequency reactive magnetron sputtering combined with RF inductively coupled plasma in a DC magnetic field and electron cyclotron wave resonance (ECWR).
Libor Nožka   +7 more
doaj   +1 more source

Efficient Magnetization Switching Driven by Orbital Torque in Light 3d Transition‐Metal Nitrides

open access: yesAdvanced Functional Materials, EarlyView.
Efficient magnetization switching is demonstrated through orbital torque generated from light 3d transition‐metal nitride. Transition‐metal nitrides are established as effective sources of orbital angular momentum for current‐induced switching, highlighting their potential for low‐power next‐generation orbitronic devices beyond conventional heavy‐metal‐
Gaurav K. Shukla   +3 more
wiley   +1 more source

The effect of substrate bias on the characteristics of CrN coatings deposited by DC-superimposed HiPIMS system

open access: yes, 2017
Chromium nitride coatings were prepared by reactive DC-superimposed high-power impulse magnetron sputtering (HiPIMS) system. The influence of substrate bias on the microstructure and mechanical properties of CrN coatings was investigated.
Xia, F.   +11 more
core   +1 more source

Thickness‐Programmable Opto‐Memristive Dynamics in 6‐In Wafer‐Scale Atomic‐Layer‐Controlled WS2 for Reservoir Computing

open access: yesAdvanced Functional Materials, EarlyView.
A 6‐in wafer‐scale atomic‐layer‐controlled tungsten disulfide (WS2) is achieved by combining plasma‐assisted synthesis with three‐gas reactive ion etching. Precise layer control enables tunable band‐gap evolution and pulse‐history‐dependent opto‐memristive dynamics.
Seongho Kim   +17 more
wiley   +1 more source

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