Results 111 to 120 of about 2,950,870 (336)

Harmonic and DC Bias Hysteresis Characteristics Simulation Based on an Improved Preisach Model. [PDF]

Materials (Basel), 2023
Zhang C, Li H, Tian Y, Li Y, Yang Q.
europepmc   +1 more source

Nonequilibrium Josephson-like effects in wide mesoscopic S-N-S junctions

, 1999
Mesoscopic superconducting-normal-metal-superconducting (S-N-S) junctions with a large separation between the superconducting electrodes (i.e. wide junctions) exhibit nonequilibrium supercurrents, even at temperatures for which the equilibrium Josephson ...
Argaman, Averin, Averin, Bagwell, Bardas, Belzig, Courtois, Drexler, Gunsenheimer, Harris, Kirtley, Lehnert, Lempitskii, Likharev, Martin-Rodero, Melsen, Nathan Argaman, Olvera de la Cruz, Samuelsson, Sipr, Spivak, Thomas, Thomas, Tinkham, Volkov, Warlaumont, Wilkinson, Zaikin, Zhou, Zhou   +29 more
core   +1 more source

Bio‐Inspired Magnetically Tunable Structural Colors from Elliptical Self‐Assembled Block Copolymer Microparticles

Advanced Functional Materials, EarlyView.
Cephalopod‐inspired photonic microparticles with dynamic structural coloration are fabricated via confined self‐assembly of linear block copolymers into ellipsoids containing stacked lamellae. Embedded superparamagnetic nanoparticles enable rapid magnetic alignment, restoring vivid, angle‐dependent color.
Gianluca Mazzotta, Simone Bertucci, Jose Mendoza‐Carreño, Agustín Mihi, Paola Lova, Davide Comoretto, Ullrich Steiner, Marco Lattuada, Andrea Dodero   +8 more
wiley   +1 more source

Electro‐Chemo‐Mechanical Coupling in Hf0.5Zr0.5O2 Ferroionic Heterostructures

Advanced Functional Materials, EarlyView.
Schematic of a ferroionic HZO heterostructure where epitaxial interfaces enable dynamic oxygen‐vacancy exchange, coupling ionic and ferroelectric degrees of freedom. Vacancy‐mediated polarization modulation biases HZO polymorphism, suppresses leakage, and enhances piezoelectric response, yielding distinct butterfly‐loop evolution and diode‐like ...
Achilles Bergne, Denis Alikin, Milica Vasiljevic, Victor B. Tinti, Javier Zamudio‐García, Leonardo Soares de Oliveira, Megan Landberg, Dimitrios Koukoulis, Huaiyu Chen, Jesper Wallentin, David Marrero‐López, Astri Bjørnetun Haugen, Sizhao Huang, Dennis Christensen, Nini Pryds, Alexander Tselev, Andrei Kholkin, Vincenzo Esposito   +17 more
wiley   +1 more source

Analysis of asymmetric property with DC bias current on thin-film magnetoimpedance element

AIP Advances, 2018
We theoretically analyzed the magnetoimpedance profile of a thin-film element with a DC bias current using the bias susceptibility theory and Maxwell’s equations. Although the analysis model predicts that an element with a rectangular cross section shows
Hiroaki Kikuchi, Chihiro Sumida
doaj   +1 more source

Optoelectronic Synaptic Devices Using Molecular Telluride Phase‐Change Inks for Three‐Factor Learning

Advanced Functional Materials, EarlyView.
Optoelectronic synaptic devices based on solution‐processed molecular telluride GST‐225 phase‐change inks are demonstrated for three‐factor learning. A global optical signal broadcast through a silicon waveguide induces non‐volatile conductance updates exclusively in locally electrically flagged memristors.
Kevin Portner, Dhananjeya Kumaar, Giacomo Torti, Killian Keller, Till Zellweger, Florian M. Schenk, Christoph Weilenmann, Daniel Chelladurai, Vara Prasad Jonnalagadda, Ghazi Sarwat Syed, Vanessa Wood, Jürg Leuthold, Alexandros Emboras, Maksym Yarema, Mathieu Luisier   +14 more
wiley   +1 more source

Fabrication and DC-Bias Manipulation Frequency Characteristics of AlN-Based Piezoelectric Micromachined Ultrasonic Transducer. [PDF]

Micromachines (Basel), 2023
Li T, Zhang L, Geng W, He J, Rao Y, Huo J, Yan K, Chou X.   +7 more
europepmc   +1 more source

Multibit Ferroelectric HfZrO Memcapacitor for Non‐Volatile Analogue Memory and Reconfigurable Electronics

Advanced Functional Materials, EarlyView.
Ferroelectric memcapacitors enable non‐volatile, voltage‐programmable capacitance tuning for adaptive electronics. A TiN/HfZrO/TiN device stack demonstrates more than eight stable capacitance states within a 24 pF memory window in compact 60 ×$\times$ 60 μm2$\umu{\rm m}^{2}$ devices at low operating voltages.
Deepika Yadav, Spyros Stathopoulos, Patrick Foster, Andreas Tsiamis, Mohamed Awadein, Hannah Levene, Themis Prodromakis   +6 more
wiley   +1 more source

Research on loss characteristic of soft magnetic composites under nonsinusoidal excitations with DC bias field

AIP Advances
Choosing a suitable core loss model and accurately predicting energy loss are crucial in designing magnetic devices with high efficiency based on soft magnetic composites (SMCs).
Chao Mei, Kun Wan, Bowei Zhang, Xu Zhu, Feng Hu, Wei Liu, Zhongqiu Zou, Hailin Su   +7 more
doaj   +1 more source

Acoustic Multi-Parameter Early Warning Method for Transformer DC Bias State. [PDF]

Sensors (Basel), 2022
Zhou Y, Wang B.
europepmc   +1 more source