Results 111 to 120 of about 885,382 (297)

Analysis of asymmetric property with DC bias current on thin-film magnetoimpedance element

open access: yesAIP Advances, 2018
We theoretically analyzed the magnetoimpedance profile of a thin-film element with a DC bias current using the bias susceptibility theory and Maxwell’s equations. Although the analysis model predicts that an element with a rectangular cross section shows
Hiroaki Kikuchi, Chihiro Sumida
doaj   +1 more source

Magnetism and Nonlinear Charge Transport in NiFe2O4/γ‐Al2O3/SrTiO3 Heterostructure: Toward Spintronic Applications

open access: yesAdvanced Functional Materials, EarlyView.
In this report, we demonstrate that a crystalline phase of 52nm thick NiFe2O4 can be grown by RF sputtering on top of γ‐Al2O3(8nm)/SrTiO3 at a significantly low temperature (150 °C) without compromising the mobility and carrier density of the 2D electron gas at the γ‐Al2O3(8nm)/SrTiO3 interface.
Amit Chanda   +11 more
wiley   +1 more source

Research on loss characteristic of soft magnetic composites under nonsinusoidal excitations with DC bias field

open access: yesAIP Advances
Choosing a suitable core loss model and accurately predicting energy loss are crucial in designing magnetic devices with high efficiency based on soft magnetic composites (SMCs).
Chao Mei   +7 more
doaj   +1 more source

Nonequilibrium Josephson-like effects in wide mesoscopic S-N-S junctions

open access: yes, 1999
Mesoscopic superconducting-normal-metal-superconducting (S-N-S) junctions with a large separation between the superconducting electrodes (i.e. wide junctions) exhibit nonequilibrium supercurrents, even at temperatures for which the equilibrium Josephson ...
Argaman   +29 more
core   +1 more source

Intermediate Resistive State in Wafer‐Scale Vertical MoS2 Memristors Through Lateral Silver Filament Growth for Artificial Synapse Applications

open access: yesAdvanced Functional Materials, EarlyView.
In MOCVD MoS2 memristors, a current compliance‐regulated Ag filament mechanism is revealed. The filament ruptures spontaneously during volatile switching, while subsequent growth proceeds vertically through the MoS2 layers and then laterally along the van der Waals gaps during nonvolatile switching.
Yuan Fa   +19 more
wiley   +1 more source

Pixelation‐Free, Monolithic Iontronic Pressure Sensors Enabling Large‐Area Simultaneous Pressure and Position Recognition via Machine Learning

open access: yesAdvanced Functional Materials, EarlyView.
A pixelation‐free, monolithic iontronic pressure sensor enables simultaneous pressure and position sensing over large areas. AC‐driven ion release generates spatially varying impedance pathways depending on the pressure. Machine learning algorithms effectively decouple overlapping pressure–position signals from the multichannel outputs, achieving high ...
Juhui Kim   +10 more
wiley   +1 more source

Deposition of High-k Tantalum Oxide by DC Hollow Cathode Gas Flow Sputtering and the Influence of DC and Pulsed DC Substrate Bias

open access: yesIEEE Journal of the Electron Devices Society
This work investigates the capability of direct current (DC) excited hollow cathode gas flow sputtering (GFS) to contribute to the synthesis of high performing thin films for micro electronic applications.
Bertwin Bilgrim Otto Seibertz   +1 more
doaj   +1 more source

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