Results 1 to 10 of about 994 (138)

Enhanced Performance of AlGaN-Based Deep Ultraviolet Light-Emitting Diodes with Chirped Superlattice Electron Deceleration Layer

Nanoscale Research Letters, 2019
AlGaN-based deep ultraviolet (DUV) light-emitting diodes (LEDs) suffer from electron overflow and insufficient hole injection. In this paper, novel DUV LED structures with superlattice electron deceleration layer (SEDL) is proposed to decelerate the ...
Jiahui Hu, Jun Zhang, Yi Zhang, Huixue Zhang, Hanling Long, Qian Chen, Maocheng Shan, Shida Du, Jiangnan Dai, Changqing Chen   +9 more
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Advances in enhancing the light extraction efficiency of AlGaN-based deep ultraviolet light-emitting diodes via optical polarization

Frontiers in Physics
AlGaN-based deep ultraviolet light-emitting diodes (DUV-LEDs), as a novel solid-state ultraviolet light source, compared with the traditional ones, have competitive advantages over traditional UV sources such as mercury (Hg) pollution free, low energy ...
Dong-Xu Zhu, Dong-Xu Zhu, Gong Wang, Gong Wang, Yun-Fei Li, Yun-Fei Li   +5 more
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Maximizing the Light Extraction Efficiency for AlGaN-Based DUV-LEDs with Two Optimally Designed Surface Structures under the Guidance of PSO

Crystals, 2022
A novel method of utilizing an intelligent algorithm to guide the light extraction surface structure designing process for deep-ultraviolet light emitting diodes (DUV-LEDs) is proposed and investigated.
Zizheng Li, Huimin Lu, Jianping Wang, Yifan Zhu, Tongjun Yu, Yucheng Tian   +5 more
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High-Performance and Self-Powered Deep UV Photodetectors Based on High Quality 2D Boron Nitride Nanosheets

Nanomaterials, 2017
High-quality two-dimensional (2D) crystalline boron nitride nanosheets (BNNSs) were grown on silicon wafers by using pulsed plasma beam deposition techniques.
Ali Aldalbahi, Manuel Rivera, Mostafizur Rahaman, Andrew F. Zhou, Waleed Mohammed Alzuraiqi, Peter Feng   +5 more
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Self-powered DUV photodetector harvesting piezoelectric energy in a Ga₂O₃/ZnO nanorod heterojunction

Chemical Engineering Journal Advances
This study demonstrates the fabrication of a self-powered deep-ultraviolet (DUV) photodetector (PD) based on Ga2O3/ZnO heterostructured piezoelectric nanogenerators (PENGs), optimized through controlled thermal annealing.
Kai-Lin Yang, Liang-Wen Ji, Hung-Yeu Chen, Yu-Jen Hsiao, Siang-Ning Tseng, Zih-Han Lin   +5 more
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Tailoring of Energy Band in Electron-Blocking Structure Enhancing the Efficiency of AlGaN-Based Deep Ultraviolet Light-Emitting Diodes

IEEE Photonics Journal, 2016
Electron-leakage is a deep-rooted problem for nitride-based light-emitting diodes (LEDs), particularly for AlGaN-based deep-ultraviolet (DUV) LEDs. In this paper, a specific design for the electron-blocking structure in AlGaN DUV LEDs, increasing the Al ...
Xiaoli Ji, Jianchang Yan, Yanan Guo, Lili Sun, Tongbo Wei, Yun Zhang, Junxi Wang, Fuhua Yang, Jinmin Li   +8 more
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Planar Compound Eye Lens for Enhanced Light Extraction Efficiency in AlGaN‐Based Deep Ultraviolet LEDs

Advanced Photonics Research
Total internal reflection prevents photons from escaping deep‐ultraviolet (DUV) LED, resulting in serious energy waste and reduced service life.
Qilong Tan, Jie Zhao, Qixin Li, Huan Liu, Bin Dong, Chenguang He, Zhitao Chen, Wen Zhou, Ningyang Liu   +8 more
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Performance study of UV micro-LEDs with AlGaN quantum dots and transparent tunnel junction

Next Nanotechnology
It is well known that the size of deep ultraviolet (DUV) micro LED (μLEDs) decreases, although bandwidth improves, the optical power drops sharply, severely limiting the application of DUV μLEDs in optical communication.
Yun-Cheng Hsu, Ching-Ho Tien, Yun-Han Chang, Sunanda Mitra, Sankesh Shetty, Sébastien Chenot, Mohamed Al Khalfioui, Hao-Chung Kuo, Chi-Wai Chow, Chia-Yen Huang, Julien Brault, Ray-Hua Horng   +11 more
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Joint intelligent optimization design of the active region and electron blocking layer for AlGaN-based deep ultraviolet LEDs

AIP Advances
Aiming to enhance the internal quantum efficiency (IQE) of AlGaN-based deep ultraviolet light-emitting diodes (DUV LEDs), the active region based on the V-shaped quantum well (QW) and the electron-blocking layer (EBL) structure are jointly optimized ...
Jinglei Wang, Huimin Lu, Jianhua Ma, Yifan Zhu, Zihua Zhang, Tongjun Yu, Xuecheng Wei, Hua Yang, Jianping Wang   +8 more
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On the p-AlGaN/n-AlGaN/p-AlGaN Current Spreading Layer for AlGaN-based Deep Ultraviolet Light-Emitting Diodes

Nanoscale Research Letters, 2018
In this report, AlGaN-based deep ultraviolet light-emitting diodes (DUV LEDs) with different p-AlGaN/n-AlGaN/p-AlGaN (PNP-AlGaN) structured current spreading layers have been described and investigated.
Jiamang Che, Chunshuang Chu, Kangkai Tian, Jianquan Kou, Hua Shao, Yonghui Zhang, Wengang Bi, Zi-Hui Zhang   +7 more
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