Results 231 to 240 of about 5,958,454 (264)

AlGaN-Based Deep-Ultraviolet Light-Emitting Diodes

2017
222–351 nm AlGaN-based deep-ultraviolet (DUV) light-emitting diodes (LEDs) are demonstrated, which have been achieved by the development of crystal growth techniques for wide-bandgap AlN and AlGaN. Significant increases in internal quantum efficiency (IQE) have been achieved for AlGaN quantum well (QW) emissions by introducing low-threading-dislocation
Hideki Hirayama, Norihiko Kamata, Kenji Tsubaki   +2 more
openaire   +1 more source

Cascaded deep ultraviolet light-emitting diode via tunnel junction

Chinese Optics Letters, 2021
The AlGaN-based deep ultraviolet (DUV) light-emitting diode (LED) is an alternative DUV light source to replace traditional mercury-based lamps. However, the state-of-the-art DUV LEDs currently exhibit poor wall-plug efficiency and low light output power, which seriously hinder their commercialization.
Huabin Yu, Zhongjie Ren, Muhammad Hunain Memon, Shi Fang, Danhao Wang, Zhongling Liu, Haochen Zhang, Feng Wu, Jiangnan Dai, Changqing Chen, Haiding Sun   +10 more
openaire   +1 more source

AlGaN nanowire deep ultraviolet light emitting diodes and lasers

2017 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC), 2017
Semiconductor lasers operating in the UV-C band (100–280 nm) are important for a broad range of applications including surface treatment, bio-agent detection and the production of microelectronics and integrated circuits. To date, however, it has remained challenging to achieve electrically injected AlGaN quantum well lasers operating in these ...
Zetian Mi, Songrui Zhao, Xianhe Liu
openaire   +1 more source

Inhomogeneous spectral broadening in deep ultraviolet light emitting diodes

Physics and Simulation of Optoelectronic Devices XXVII, 2019
We investigate the spectral broadening in deep ultraviolet (UV) multi quantum well light emitting diodes (LED) by modeling the emission spectra. Experimental emission spectra of deep UV LEDs exhibit a at tail towards lower energies and a steep decrease towards high energies that cannot be explained by convolution of the spectrum with a broadening ...
Norman Susilo, Michael Kneissl, Martin Guttmann, Tim Wernicke, Friedhard Römer, Bernd Witzigmann   +5 more
openaire   +1 more source

Development of AlGaN-based deep ultraviolet light-emitting diodes and laser diodes

2015 12th China International Forum on Solid State Lighting (SSLCHINA), 2015
Recently, our group has demonstrated several methods to improve the performance of deep ultraviolet (DUV) LEDs and LDs. A high-quality and crack-free AlN template has been achieved by inserting multiple middle-temperature AlN layers with modulated source flow.
Yanan Guo, Yun Zhang, Junxi Wang, Jianchang Yan, Yingdong Tian, Xiang Chen, Lili Sun, Tongbo Wei, Jinmin Li   +8 more
openaire   +1 more source

Deep Ultraviolet Light Emitting Diode (LED)-Based Sensing of Sulfur Dioxide

Applied Spectroscopy, 2016
With the recent development of deep ultraviolet (DUV) light emitting diodes (LEDs) comes the possibility of targeting absorption bands of several gases, including sulfur dioxide (SO 2 ). SO 2 has strong absorption bands in the 300 nm spectral region ...
Anna P M, Michel, Jason, Kapit
openaire   +2 more sources

AlGaN Deep-Ultraviolet Light-Emitting Diodes Grown on SiC Substrates

ACS Photonics, 2020
The disinfection industry would greatly benefit from efficient, robust, high-power deep-ultraviolet light-emitting diodes (UV–C LEDs).
Burhan K. SaifAddin, Abdullah S. Almogbel, Christian J. Zollner, Feng Wu, Bastien Bonef, Michael Iza, Shuji Nakamura, Steven P. DenBaars, James S. Speck   +8 more
openaire   +2 more sources

Polarization Effect in AlGaN-Based Deep-Ultraviolet Light-Emitting Diodes

IEEE Journal of Quantum Electronics, 2017
The polarization effect in AlGaN-based deep-ultraviolet (DUV) light-emitting diodes (LEDs) is investigated, which is critical for the development of DUV LEDs, because the basal material, epitaxial structure, and polarization characteristics are very distinct to those of the well-developed (In)GaN-based near-ultraviolet and visible light emitters.
Yen-Kuang Kuo, Jih-Yuan Chang, Hui-Tzu Chang, Fang-Ming Chen, Ya-Hsuan Shih, Bo-Ting Liou   +5 more
openaire   +1 more source

Impact of strain on deep ultraviolet nitride laser and light-emitting diodes

Journal of Applied Physics, 2011
To date, the shortest wavelength of an ultraviolet current-injection nitride laser has been limited to ∼340 nm. This begs the question of whether there is a fundamental limitation that restricts the realization of injection lasers below this wavelength. This letter investigates this issue.
T. K. Sharma, E. Towe
openaire   +1 more source

High efficiency AlGaN deep ultraviolet light emitting diodes on silicon

SPIE Proceedings, 2015
The performance of conventional Al(Ga)N planar devices decays drastically with increasing Al content, leading to low internal quantum efficiencies (IQEs) and high device operation voltages. In this paper, we show that these challenges can be addressed by utilizing epitaxially grown nitrogen polar (N-polar) Al(Ga)N nanowires.
Zetian Mi, Songrui Zhao, Ashfiqua Connie, Mohammad Hadi Tavakoli Dastjerdi   +3 more
openaire   +1 more source