Results 1 to 10 of about 3,010,887 (190)
Chemical trends of deep levels in van der Waals semiconductors [PDF]
Nature Communications, 2020 The optical and electronic properties of semiconducting transition metal dichalcogenides are strongly dependent on native defects within their crystal lattice.
Penghong Ci +13 more
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Influence of radiation defects on the electrophysical and detector properties of CdTe:Cl irradiated by neutrons [PDF]
Tekhnologiya i Konstruirovanie v Elektronnoi Apparature, 2020 A promising material for semiconductor detectors of ionizing radiation is CdTe:Cl which allows obtaining detectors with high resistivity ρ and electron mobility μn.
Kondrik A. I., Kovtun G. P.
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Influence of impurities and structural defects on the properties of CdTe- and CdZnTe-based detectors
Tekhnologiya i Konstruirovanie v Elektronnoi Apparature, 2022 The most researched materials for uncooled semiconductor detectors of ionizing radiation are CdTe:Cl and Cd0.9Zn0.1Te, which allow to obtain detectors with high values of resistivity ρ and electron mobility. In the process of producing detector materials,
Alexandr Kondrik, Gennadiy Kovtun
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Технологія та конструювання в електронній апаратурі, 2023 The paper highlights the results of quantitative studies of the influence of the content of impurities and structural defects on the electrophysical and detector properties of Cd0.9Mn0.1Te:V — resistivity and concentrations of free charge carriers, life ...
Оleksandr Kondrik, Dmitriy Solopikhin
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Mid-level deep pattern mining [PDF]
2015 IEEE Conference on Computer Vision and Pattern Recognition (CVPR), 2015 Mid-level visual element discovery aims to find clusters of image patches that are both representative and discriminative. In this work, we study this problem from the prospective of pattern mining while relying on the recently popularized Convolutional Neural Networks (CNNs).
Li, Yao +3 more
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Dynamic Performance Characterization Techniques in Gallium Nitride-Based Electronic Devices
Crystals, 2021 In this paper, we compare and discuss the main techniques for the analysis of the dynamic performance of GaN-based transistors. The pulsed current-voltage characterization provides information on the effect of different trapping voltages on various bias ...
Carlo De Santi +4 more
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Deep levels in semiconductors [PDF]
Physica B+C, 1983 Abstract The 3d transition element ion impurities in silicon are reviewed for the broad insight they provide in understanding deep levels in semiconductors. As interstitials, their interaction with the host tends to confine the d-levels to the forbidden gap, providing many deep states.
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Electric-Field Mapping of Optically Perturbed CdTe Radiation Detectors
Sensors, 2023 In radiation detectors, the spatial distribution of the electric field plays a fundamental role in their operation. Access to this field distribution is of strategic importance, especially when investigating the perturbing effects induced by incident ...
Adriano Cola +2 more
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Semiempirical calculation of deep levels: divacancy in Si [PDF]
, 1973 A study of the electronic levels associated with the divacancy in silicon is reported. The extended Huckel theory is shown to reproduce the band structure of silicon.
Lee, T. F., McGill, T. C.
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