Results 291 to 300 of about 20,846,472 (359)
Validation of a Deep-Learning Coregistration Framework for Long-Axial-Field-of-View PET/CT Using Low-Radiation-Exposure Protocols Across Various Tracers. [PDF]
Li Z +20 more
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Response of supersaturated TDG distribution characteristics to thermal stratification in a cascading large deep reservoir. [PDF]
Wang H +7 more
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Development and validation of a multi-task deep learning model integrating PET-CT radiomics, clinical variables, and EBV DNA for prognostic prediction in locally advanced nasopharyngeal carcinoma. [PDF]
Zhang J +5 more
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Leveraging Deep Levels in Narrow Bandgap Bi0.5Sb1.5Te3 for Record‐High zTave Near Room Temperature
Advanced Functional Materials, 2020Deep levels in a narrow bandgap semiconductors are considered detrimental to their electrical performance. Here the constructive role of Indium‐induced deep levels in regulating the majority and minority carriers for state‐of‐the‐art average ...
Lipeng Hu +9 more
semanticscholar +1 more source
Deep Level Fourier Spectroscopy for Determination of Deep Level Parameters
Japanese Journal of Applied Physics, 1982A new technique called deep-lebel Fourier spectroscopy (DLFS), is proposed. This is an efficient and convenient method for evaluating deep livels in semiconductors. The technique is presented with a frequency space analysis for the case of exponential capacitance transients. Taking the Fourier transforms of the transient capacitance values, the deep
Kousuke Ikeda, Hidetoshi Takaoka
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Applied Physics Letters, 2018
This work presents a study of trap levels in a mesoscopic multication lead halide perovskite solar cell structure. The investigation is performed by combining capacitance measurements, admittance measurements, Deep Level Transient Spectroscopy (DLTS ...
A. Polyakov +10 more
semanticscholar +1 more source
This work presents a study of trap levels in a mesoscopic multication lead halide perovskite solar cell structure. The investigation is performed by combining capacitance measurements, admittance measurements, Deep Level Transient Spectroscopy (DLTS ...
A. Polyakov +10 more
semanticscholar +1 more source
High Pressure Research, 1992
Abstract The influence of hydrostatic pressure on vanadiumrelated acceptor level in GaAs has been investigated in order to test the possibility of using it as a suitable reference level in heterojunctions. The impedance measurements made on GaAs:V/Ni Schottky barriers give its pressure coefficient of +110 meV/GPa with respect to the conduction band ...
Jan Zeman +2 more
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Abstract The influence of hydrostatic pressure on vanadiumrelated acceptor level in GaAs has been investigated in order to test the possibility of using it as a suitable reference level in heterojunctions. The impedance measurements made on GaAs:V/Ni Schottky barriers give its pressure coefficient of +110 meV/GPa with respect to the conduction band ...
Jan Zeman +2 more
openaire +1 more source

