Results 311 to 320 of about 20,846,472 (359)
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2018 IEEE/CVF Conference on Computer Vision and Pattern Recognition, 2017
Visual recognition requires rich representations that span levels from low to high, scales from small to large, and resolutions from fine to coarse.
F. Yu, Dequan Wang, Trevor Darrell
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Visual recognition requires rich representations that span levels from low to high, scales from small to large, and resolutions from fine to coarse.
F. Yu, Dequan Wang, Trevor Darrell
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Distribution of deep levels in Si:Au by spectral analysis of deep-level transient spectroscopy
Applied Physics A: Materials Science & Processing, 1998eV and Δσ=1.4×10-15 cm2) around their mean values (E0=0.47 eV and σ0=5.0×10-15 cm2). No broadening for the other levels is observed in the emission rate spectrum.
J. Yoshino +3 more
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2020
Deep levels in GaN are summarized. E1 and E3 electron traps at the respective energies of around EC − 0.25 eV and EC − 0.6 eV have been commonly observed in n-type GaN layers. H1 hole trap at around EV + 0.9 eV is reported in both n-type and p-type GaN layers, and likely associates the yellow luminescence band in a photoluminescence spectrum.
Tetsuo Narita, Yutaka Tokuda
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Deep levels in GaN are summarized. E1 and E3 electron traps at the respective energies of around EC − 0.25 eV and EC − 0.6 eV have been commonly observed in n-type GaN layers. H1 hole trap at around EV + 0.9 eV is reported in both n-type and p-type GaN layers, and likely associates the yellow luminescence band in a photoluminescence spectrum.
Tetsuo Narita, Yutaka Tokuda
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Deep level transient spectroscopy characterization of tungsten-related deep levels in silicon
Journal of Applied Physics, 1991Deep level transient spectroscopy is used to determine the deep levels introduced by tungsten in the silicon band gap. The experimental results indicate that tungsten creates three defect centers, with levels at Ev+0.22 eV, Ev+0.33 eV, and Ec−0.59 eV. The shape of the concentration profiles indicates that W does not diffuse by a simple mechanism in Si.
S. Boughaba, D. Mathiot
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Silver related deep levels in silicon
Physica Status Solidi (a), 1988The properties of silver impurity levels in silicon are studied. Activation enthalpies of 0.56 eV from the conduction band for the acceptor level and 0.33 eV from the valence band for the donor level are determined using C(U) and DLTS. The directly measured thermal electron capture cross section of the acceptor level equals to σn = 3.0 × 10−16 cm2 and ...
Pandian, V, Kumar, V
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Normal electroencephalogram at deep levels of hypoglycemia
Electroencephalography and Clinical Neurophysiology, 1957Abstract 1. 1. Intravenous insulin was given to a series of 24 young adult patients with diagnoses of syncopal episodes or atypical seizures, in an attempt to elicit EEG abnormalities. 2. 2. Hypoglycemia of extreme degree was achieved 30 min. after injection of insulin in almost all patients. 3. 3.
D K, ZIEGLER, J, PRESTHUS
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Physica Status Solidi (a), 1979
The properties of iron-doped GaP crystals are investigated using double injection methods of p–i–n diodes, absorption, and luminescence. Current–voltage characteristics are observed (probably for the first time in GaP) with N- and S-like parts. The results allow to estimate the energy of ionized iron acceptors to 0.87 eV. [Russian Text Ignored].
L. A. Demberel +3 more
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The properties of iron-doped GaP crystals are investigated using double injection methods of p–i–n diodes, absorption, and luminescence. Current–voltage characteristics are observed (probably for the first time in GaP) with N- and S-like parts. The results allow to estimate the energy of ionized iron acceptors to 0.87 eV. [Russian Text Ignored].
L. A. Demberel +3 more
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Deep Continuous Fusion for Multi-sensor 3D Object Detection
European Conference on Computer Vision, 2018In this paper, we propose a novel 3D object detector that can exploit both LIDAR as well as cameras to perform very accurate localization. Towards this goal, we design an end-to-end learnable architecture that exploits continuous convolutions to fuse ...
Ming Liang +3 more
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The Effects of Surface-Level Diversity Compared to Deep-Level Diversity
Proceedings of the 20th Annual SIG Conference on Information Technology Education, 2019Diversity's contribution to performance in generating unique ideas is difficult to parse out. This is due to the difficulty associated with separating deep-level diversity from surface-level diversity. This poster proposes a study that will use virtual models and voice modulation to disguise surface-level diversity and see if deep-level diversity still
Alan Franklin, Belle Woodward
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Solid-State Electronics, 1988
Abstract The advantages of a DLTS method—the DLTFS method—are presented. In this technique the capacitance-time transients are digitalized, and the discrete Fourier coefficients are formed via numerical Fourier transformation. These coefficients can be used to calculate amplitude and time constant of the transients for discrete trap levels in various
S. Weiss, R. Kassing
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Abstract The advantages of a DLTS method—the DLTFS method—are presented. In this technique the capacitance-time transients are digitalized, and the discrete Fourier coefficients are formed via numerical Fourier transformation. These coefficients can be used to calculate amplitude and time constant of the transients for discrete trap levels in various
S. Weiss, R. Kassing
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