Results 301 to 310 of about 20,846,472 (359)
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MRS Proceedings, 1989
AbstractThe physics of deep levels in semiconductors is reviewed, with emphasis on the fact that all substitutional impurities produce deep levels - some of which may not lie within the fundamental band gap. The character of a dopant changes when one of the deep levels moves into or out of the fundamental gap in response to a perturbation such as ...
John D. Dow +3 more
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AbstractThe physics of deep levels in semiconductors is reviewed, with emphasis on the fact that all substitutional impurities produce deep levels - some of which may not lie within the fundamental band gap. The character of a dopant changes when one of the deep levels moves into or out of the fundamental gap in response to a perturbation such as ...
John D. Dow +3 more
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The deep levels in superlattices
Journal of Luminescence, 1988Abstract The deep levels of substitutional sp3-bonded point defects in GaSb/AlSb abd GaAs/GaP (001) superlattices are predicted by using Green's function method in empirical tight-binding formalism.
Ming-Zhu Huang +3 more
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Journal of Electronic Materials, 1990
The physics governing deep levels in superlattices and quantum wells is elucidated, with emphasis on the importance of shallow-deep transitions caused by a band edge passing through a deep level, and the accompanying change in doping character of the impurity.
John D. Dow +4 more
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The physics governing deep levels in superlattices and quantum wells is elucidated, with emphasis on the importance of shallow-deep transitions caused by a band edge passing through a deep level, and the accompanying change in doping character of the impurity.
John D. Dow +4 more
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DeepLineDP: Towards a Deep Learning Approach for Line-Level Defect Prediction
IEEE Transactions on Software Engineering, 2023Defect prediction is proposed to assist practitioners effectively prioritize limited Software Quality Assurance (SQA) resources on the most risky files that are likely to have post-release software defects.
Chanathip Pornprasit +1 more
semanticscholar +1 more source
Journal of Applied Physics, 1973
Change of the junction capacitance under the illumination of monochromatic radiation has been observed in GaP n+p junctions. The peaks were observed at 1.8 and 2.4 eV at 77°K. The 1.8 eV peak was attributed to the hole activation from Fe3+ to the valence band.
Yasuo Okuno +2 more
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Change of the junction capacitance under the illumination of monochromatic radiation has been observed in GaP n+p junctions. The peaks were observed at 1.8 and 2.4 eV at 77°K. The 1.8 eV peak was attributed to the hole activation from Fe3+ to the valence band.
Yasuo Okuno +2 more
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Geometric deep learning on molecular representations
Nature Machine Intelligence, 2021Geometric deep learning (GDL) is based on neural network architectures that incorporate and process symmetry information. GDL bears promise for molecular modelling applications that rely on molecular representations with different symmetry properties and
Kenneth Atz, F. Grisoni, G. Schneider
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Journal of Crystal Growth, 1988
Abstract We have used a variety of complementary techniques to study electronic trapping levels that are far from either band edge in CdTe. These deep levels play an important role in determining the electrical properties of the material. We have studied and attempted to identify levels due to specific defects and those due to either intentional or ...
R.E. Kremer, W.B. Leigh
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Abstract We have used a variety of complementary techniques to study electronic trapping levels that are far from either band edge in CdTe. These deep levels play an important role in determining the electrical properties of the material. We have studied and attempted to identify levels due to specific defects and those due to either intentional or ...
R.E. Kremer, W.B. Leigh
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Advances in Physics, 1980
Abstract All defects which are dominated by short-range forces belong to the family of ‘deep’ impurities and exhibit distinctly different properties from the familiar shallow donors and acceptors, where the decisive term is the Coulomb potential. Whereas formation of the shallow states relates to a small part of the Brillouin zone and can be described ...
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Abstract All defects which are dominated by short-range forces belong to the family of ‘deep’ impurities and exhibit distinctly different properties from the familiar shallow donors and acceptors, where the decisive term is the Coulomb potential. Whereas formation of the shallow states relates to a small part of the Brillouin zone and can be described ...
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Highly Accurate Machine Fault Diagnosis Using Deep Transfer Learning
IEEE Transactions on Industrial Informatics, 2019We develop a novel deep learning framework to achieve highly accurate machine fault diagnosis using transfer learning to enable and accelerate the training of deep neural network. Compared with existing methods, the proposed method is faster to train and
Siyu Shao +3 more
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MRS Proceedings, 1985
AbstractThe physics of deep levels is reviewed, with emphasis on the qualitative physics that has been elucidated as a result of the ideas of Lannoo, Lenglart, Hjalmarson, Vogl, Wolford, Hsu, Sankey, Allen, and others.
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AbstractThe physics of deep levels is reviewed, with emphasis on the qualitative physics that has been elucidated as a result of the ideas of Lannoo, Lenglart, Hjalmarson, Vogl, Wolford, Hsu, Sankey, Allen, and others.
openaire +1 more source