Results 131 to 140 of about 25,550 (259)

Indolo‐Fused MR‐TADF Materials and their Application in Organelle‐Targeted Bioimaging

open access: yesAdvanced Functional Materials, EarlyView.
Using indolo‐fusion and sulfur bridging, four multi‐resonance thermally activated delayed fluorescent (MR‐TADF) materials are reported based on the quinolino[3,2,1‐de]acridine‐5,9‐dione (QAO) framework. Functionalization of these dyes with phosphonium groups enables cellular imaging with mitochondrial targeting in glassy organic nanoparticles ...
Sushil Sharma   +5 more
wiley   +1 more source

Programmable 2D Magnetic Clusterphenes With High Curie Temperature and Strong Magnetic Anisotropy via Cluster Assembly and Ligand Synergy

open access: yesAdvanced Functional Materials, EarlyView.
Programmable 2D magnetic clusterphenes are realized through a ligand‐mediated cluster‐assembly strategy. Direct linking of magnetic superatomic clusters enhances electron delocalization and symmetry breaking, enabling the concurrent strengthening of magnetic exchange interactions and spin–orbit coupling.
Junxiang Fu   +13 more
wiley   +1 more source

Degeneracies of Triangulated Graphs

open access: yesTheory and Applications of Graphs
Summary: A graph \(G\) is \(k\)-degenerate if each subgraph has minimum degree at most \(k\). The degeneracy \(D(G)\) is the smallest \(k\) such that \(G\) is \(k\)-degenerate. We determine the truth values of four statements (using different quantifiers) about when a planar graph \(G\) with degeneracy \(k\) has a triangulation with degeneracy \(l ...
openaire   +2 more sources

Extraordinary n‐type Tellurium‐Free Thermoelectric Performance of Y‐Doped BiSe via Synergistic Effect of Vacancies and Band Engineering

open access: yesAdvanced Functional Materials, EarlyView.
Yttrium doping in Sb‐alloyed BiSe synergistically induces Bi vacancies and flattens conduction bands, simultaneously slashing lattice thermal conductivity by 50% and boosting the power factor. The optimized n‐type Bi0.64Sb0.3Y0.06Se delivers a peak zT of 0.91 at 393 K (average zT 0.76, 300–523 K) and an 8‐pair module with 4.6% conversion efficiency ...
Wenhao Xie   +16 more
wiley   +1 more source

Direct Channel Implantation of B and BF2 Ions for Functional Control of Oxygen Vacancies in Oxide Semiconductor Thin Film Transistors

open access: yesAdvanced Functional Materials, EarlyView.
Direct channel implantation of B and BF2 ions was employed to fabricate amorphous IGZO TFTs with improved electrical and stability properties. B and BF2 implantation modulate oxygen vacancies within the IGZO channel. The field‐effect mobility of ion‐implanted IGZO TFTs was enhanced as compared to pristine IGZO TFTs.
Beom Soo Kim   +9 more
wiley   +1 more source

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