Results 21 to 30 of about 375,536 (264)

The effects of extended depletion region on noise modeling of HEMT's

IEICE Electronics Express, 2005
In this paper we present a high frequency noise model for short channel HEMTs.This model takes into account the effect of depletion region that extends into gate to drain spacing.The effect of this high field extension region on the noise performance of three HEMT structures is analytically calculated and compared with measured data.
Mishra, Meena, Muralidharan, R., Harsh, *, Islam, S.S., Das, Mukunda B.   +4 more
openaire   +3 more sources

Enhancing Ultraviolet Responsivity of GaN p-i-n Photodetectors Through Full Depletion Thin-Layer Doping-Induced Carrier Transport Modulation

IEEE Journal of the Electron Devices Society
High-performance GaN-based ultraviolet (UV) photodetectors (PDs) are essential for applications in harsh-environment sensing, space-based UV monitoring, and high-speed optical communications.
Shishun Yang, Yaxuan Liu, Huiyi Zhang, Hanlin Li, Jun Wang   +4 more
doaj   +1 more source

Multiple Remotely Sensed Lines of Evidence for a Depleting Seasonal Snowpack in the Near East

Remote Sensing, 2019
The snow-fed river basins of the Near East region are facing an urgent threat in the form of declining water resources. In this study, we analyzed several remote sensing products (optical, passive microwave, and gravimetric) and outputs of a ...
Yeliz A. Yılmaz, Kristoffer Aalstad, Omer L. Sen   +2 more
doaj   +1 more source

Surface-Potential-Based Drain Current Model of Gate-All-Around Tunneling FETs

IEEE Journal of the Electron Devices Society
A closed-form, analytical, and unified model for the surface potential from source to drain in nanowire (NW) gate-all-around (GAA) tunneling field effect transistors (TFETs) is proposed and validated.
Zhanhang Chen, Haoliang Shan, Ziyi Ding, Xia Wu, Xiaolin Cen, Xiaoyu Ma, Wanling Deng, Junkai Huang   +7 more
doaj   +1 more source

The Oil and Gas Industry and the Niger Delta: Implications for the Environment

Journal of Applied Sciences and Environmental Management, 2010
The causes of environmental degradation and biodiversity depletion arising from the activities of the oil industry in the region are evaluated. The authors argue that, specific negative impact on the region arising from the activities of the industries ...
OO Emoyan
doaj   +1 more source

Identifying water mass depletion in northern Iraq observed by GRACE [PDF]

Hydrology and Earth System Sciences, 2015
Observations acquired by Gravity Recovery And Climate Experiment (GRACE) mission indicate a mass loss of 146 ± 6 mm equivalent water height (EWH) in northern Iraq between 2007 and 2009.
G. Mulder, T. N. Olsthoorn, D. A. M. A. Al-Manmi, E. J. O. Schrama, E. H. Smidt   +4 more
doaj   +1 more source

Climate Change, Land Use/Land Cover Change, and Population Growth as Drivers of Groundwater Depletion in the Central Valleys, Oaxaca, Mexico

Remote Sensing, 2019
Groundwater depletion is an important problem driven by population growth, land use and land cover (LULC) change, climate change, and other factors. Groundwater depletion generates water stress and encourages unstainable resource use.
Edwin Antonio Ojeda Olivares, Sadoth Sandoval Torres, Salvador Isidro Belmonte Jiménez, José Oscar Campos Enríquez, Francesco Zignol, Yunuen Reygadas, John P. Tiefenbacher   +6 more
doaj   +1 more source

AC Impedance Compared to DC Characterization for Source-Drain Resistance in Junctionless Gate-All-Around MOSFETs

IEEE Journal of the Electron Devices Society
This study investigates the frequency-dependent AC source-drain impedance (ZDS) in p-type junctionless gate-all-around (JLGAA) MOSFETs, and compares it to the DC source-drain resistance (RDS) under various biasing and stress conditions.
Hung-Hsi Chen, Ching-Lun Wang, Yao-Jen Lee, Wen-Teng Chang   +3 more
doaj   +1 more source

Analysis and Modeling of Intrinsic Capacitance in Enhancement Mode GaN HEMT

IEEE Journal of the Electron Devices Society
This paper analyzes the intrinsic capacitance of enhancement-mode (e-mode) Gallium Nitridebased High Electron Mobility Transistor (GaN HEMTs). The intrinsic capacitance was measured using $C_{i s s}$ (input capacitance), $C_{o s s}$ (output ...
Taeyoung Cho, Jesun Park, Sungyeop Jung, Myounggon Kang   +3 more
doaj   +1 more source

TCAD Analysis of the Four-Terminal Poly-Si TFTs on Suppression Mechanisms of the DC and AC Hot-Carrier Degradation

IEEE Journal of the Electron Devices Society, 2019
Four-terminal poly-Si thin-film transistors (TFTs), with a counter-doped body terminal connected to the floating channel, can suppress both dc and dynamic hot-carrier (HC) degradation of TFTs.
Ting Gao, Mingxiang Wang, Huaisheng Wang, Dongli Zhang   +3 more
doaj   +1 more source