Results 91 to 100 of about 4,228,415 (299)
Inverse analysis of semiconductor devices often suffers from non‐unique solutions, known as multivaluedness, within a large‐scale parameter space. Here, we show that a tandem neural network (tandem NN), which couples a pretrained forward model to an ...
Masatoshi Kimura +8 more
doaj +1 more source
Experiments and thermophysical simulations were conducted to investigate the electron beam powder bed fusion electron beam (PBF‐EB/M) process for the γ′‐strengthened nickel‐based superalloy Inconel 738LC. The results demonstrate the impact of process‐induced microstructural variations on high‐temperature mechanical behavior, providing a basis for ...
Jan Niklas Petenati +11 more
wiley +1 more source
A VLSI neuromorphic device for implementing spike-based neural networks [PDF]
Indiveri G, Chicca E. A VLSI neuromorphic device for implementing spike-based neural networks. Presented at the Proceedings of the 21st Italian Workshop on Neural Nets (WIRN).We present a neuromorphic VLSI device which comprises hybrid analog/digital ...
Morabito, C. F. +5 more
core +1 more source
The community‐driven Platform MaterialDigital Core Ontology (PMDco) 3.0 is introduced as a Basic Formal Ontology‐aligned semantic backbone for the processing–structure–properties paradigm in Materials Science and Engineering. Modular engineering, automated releases, and validation workflows are highlighted and key semantic patterns for materials ...
Markus Schilling +15 more
wiley +1 more source
Residual adhesive after electrode loading in adhesive‐assisted resistance spot welding is quantified through a traceable experimental‐to‐digital workflow. Chromatic confocal topography provides calibrated surface‐height data, while OpenCV detects the electrode imprint and integrates adhesive height into comparable volume metrics.
Sung‐Min Wi, Jiangdong Zhao
wiley +1 more source
Deep‐UV (258 nm) femtosecond pulses enable uniform amorphous silicon writing on Si(100)/(111) with a six‐fold larger fluence amorphization window than NIR methods. Optimized fluence and overlap yield 20–45 nm uniform and continuous amorphous layers. Microscopy shows sharp interfaces, and real‐time reflectivity reveals nanosecond melt–resolidification ...
Wissal Benali +5 more
wiley +1 more source
Numerical Simulation of Nanoscale Double-Gate MOSFETs
The further improvement of nanoscale electron devices requires support by numerical simulations within the design process. After a brief description of our SIMBA 2D/3D-device simulator, the results of the simulation of DG-MOSFETs are represented ...
R. Stenzel +3 more
doaj
The present study reports on the structural changes and related photovoltaic properties resulting from the addition of Ag in Cu(In,Ga)Se _2 (CIGS)-based thin-film solar cells analysed using two-dimensional (2D) and three-dimensional (3D) analytical and ...
Chang-Yun Song +11 more
doaj +1 more source
A Novel Bulk Planar Junctionless Field-Effect Transistor for High-Performance Biosensing
Biologically sensitive field-effect transistors (BioFETs) have advanced the biosensing capabilities in various fields such as healthcare, security and environmental monitoring.
Jeongmin Son +4 more
doaj +1 more source
Geometrical modifications on nitrocellulose membranes can result in observable differences in signal intensity relative to a reference membrane (top and bottom left). Using two reference experiments, we have developed a theoretical model that can reproduce the experimentally observed flow changes and provide information on membrane parameters, e.g ...
Maria Dimaki +2 more
wiley +1 more source

