Results 71 to 80 of about 875,510 (306)
IEEE Journal of the Electron Devices Society, 2020 In this article, an analytical predictive model of the negative capacitance (NC) effect in symmetric long channel double-gate junctionless transistor is proposed based on a charge-based model.
Amin Rassekh +4 more
doaj +1 more source
Gate tunnelling and impact ionisation in sub 100 nm PHEMTs [PDF]
, 2002 Impact ionization and thermionic tunnelling as two possible breakdown mechanisms in scaled pseudomorphic high electron mobility transistors (PHEMTs) are investigated by Monte Carlo (MC) device simulations.
Asenov, A., Kalna, K.
core +1 more source
Effect of Laser Deoxidation on Adhesive‐Bonded Aluminum in an Oxygen‐Free Atmosphere
Advanced Engineering Materials, EarlyView.This study investigates laser ablation of aluminum under oxygen‐free conditions. The goal is to produce oxide‐free substrates that enable improved adhesive bonding with epoxy. Optimized laser parameters (90% overlap, 300 µJ) combined with oxide‐free substrates result in the highest tensile strength of the adhesive bond.
Sandra Gerland +5 more
wiley +1 more source
IEEE Journal of the Electron Devices SocietyThe ability of Ultra-Thin-Body (UTB) MOS devices to enable channel length scaling can only be realistically assessed by accurately taking key physical effects such as Quantum Confinement effects (QCEs) and Short channel effects (SCEs) into account.
Nalin Vilochan Mishra +1 more
doaj +1 more source
A semi-empirical approach to calibrate simulation models for semiconductor devices
Scientific Reports, 2023 Semiconductor device optimization using computer-based prototyping techniques like simulation or machine learning digital twins can be time and resource efficient compared to the conventional strategy of iterating over device design variations by ...
Rahul Jaiswal +2 more
doaj +1 more source
Thermophysical Properties of the Desulphurization Slags With Various CaS and CaO/Al2O3 Ratio
Advanced Engineering Materials, EarlyView.This article investigates how CaS content and the CaO/Al2O3 ratio influence the thermophysical properties of desulphurization slags. Using experimental measurements and thermodynamic simulations, this study reveals complex effects on viscosity, surface tension, and density, providing new insight into slag structure and phase behavior under ...
Eldar Salpagarov +4 more
wiley +1 more source
Simulation Studies for Device Evaluation [PDF]
Respiratory Care, 2014 To the Editor: According to the Society for Simulation in Healthcare, “Simulation is the imitation or representation of one act or system by another. Healthcare simulations can be said to have 4 main purposes – education, assessment, research, and health system integration in ...
openaire +2 more sources
A method for predicting IGBT junction temperature under transient condition [PDF]
, 2008 In this paper, a method to predict junction temperature of the solid-state switch under transient condition is presented. The method is based on the thermal model of the switch and instantaneous measurement of the energy loss in the device.
Ahmed, M. M. R. +2 more
core +1 more source
Advanced Engineering Materials, EarlyView.New features on yttria‐stabilized zirconia after exposure at 1500°C: Newly discovered pyramidal structures on an old material. After exposure at 1550°C on the cross section of YSZ new features, namely pyramidal structures are discovered. These structures grow with time, increase in numbers, appear as singularities, are often arranged in strings, and ...
Doris Sebold +2 more
wiley +1 more source
Spin Qubits Confined to a Silicon Nano-Ridge
Applied Sciences, 2019 Electrostatically-defined quantum dots (QDs) in silicon are an attractive platform for quantum computation. Localized single electron spins define qubits and provide excellent manipulation and read-out fidelities.
J. Klos +6 more
doaj +1 more source