Results 81 to 90 of about 4,228,415 (299)

TCAD Simulation of Two Photon Absorption—Transient Current Technique Measurements on Silicon Detectors and LGADs

Sensors
Device simulation plays a crucial role in complementing experimental device characterisation by enabling deeper understanding of internal physical processes.
Sebastian Pape, Michael Moll, Marcos Fernández García, Moritz Wiehe   +3 more
doaj   +1 more source

Spin Qubits Confined to a Silicon Nano-Ridge

Applied Sciences, 2019
Electrostatically-defined quantum dots (QDs) in silicon are an attractive platform for quantum computation. Localized single electron spins define qubits and provide excellent manipulation and read-out fidelities.
J. Klos, B. Sun, J. Beyer, S. Kindel, L. Hellmich, J. Knoch, L. R. Schreiber   +6 more
doaj   +1 more source

Workflow for Design of Experiments‐Based Modeling of Species Transport and Growth Kinetics in GaN Hydride Vapor Phase Epitaxy

Advanced Engineering Materials, EarlyView.
A novel workflow for investigating hydride vapor phase epitaxy for GaN bulk crystal growth is proposed. It combines Design of experiments (DoE) with physical simulations of mass transport and crystal growth kinetics, serving as an intermediate step between DoE and experiments.
J. Tomkovič, G. Lukin, H. Torkashvand, A. Kerschbaum, M. Müller, S. Besendörfer, J. Heitmann, J. Friedrich   +7 more
wiley   +1 more source

Simulation and Analysis of Static Temperature Characteristics of 4H-SiC MOSFET

机车电传动, 2020
SiC materials have excellent properties such as large forbidden band width, high critical electric field, high carrier saturation drift speed and high thermal conductivity, making them widely used in high temperature, high voltage, high power and other ...
Liang ZENG, Cuixia WANG, Jiangfeng WU, Youling YU, Chengzhan LI, Xing DU   +5 more
doaj  

Simulation and Optimization of Lead-Based Perovskite Solar Cells with Cuprous Oxide as a P-type Inorganic Layer

Journal of Nigerian Society of Physical Sciences, 2019
The hole transporting material (HTM) is responsible for selectively transporting holes and blocking electrons which also plays a crucial role in the efficiency and stability of perovskite solar cells (PSCs).
D. Eli, M. Y. Onimisi, S. Garba, R. U. Ugbe, J. A. Owolabi, O. O. Ige, G. J. Ibeh, A. O. Muhammed   +7 more
doaj   +1 more source

Symmetry‐Guided Multifunctional Acoustic System Based on Mechanically Actuated Sonic Crystals

Advanced Engineering Materials, EarlyView.
This study presents the design, simulation, and experimental validation of amultifunctional acoustic metamaterial based on rotationally engineered sonic crystals.By tuning cylinder orientations, controllable band gaps and six distinct functionalities—including switching, topological insulation, beam splitting, and logic operations—areachieved ...
Yuanyan Zhao, Sriram Subramanian, Gianluca Memoli   +2 more
wiley   +1 more source

Microstructure Reconstruction in Battery Electrodes Using Machine Learning Based on Low‐Voltage Focused Ion Beam–Scanning Electron Microscopy Tomography Images

Advanced Engineering Materials, EarlyView.
Low‐voltage FIB‐SEM tomography combined with a image preprocessing pipeline improves phase contrast and enables reliable machine‐learning segmentation of conductive networks in lithium‐ion battery electrodes. Structural descriptors are extracted from segmented images, done semimanually and automated, and compared.
Lisa Beran, Vincent Nebel, Dominik Perius, Kshitij Kumar, Yannis Heim, Laura Bies, Tobias Kraus   +6 more
wiley   +1 more source

Machine Learning‐Supported Analysis for Predicting and Visualizing Nonlinear Relationships Between Material Properties in Electroplated Chromium Layers

Advanced Engineering Materials, EarlyView.
This study applies machine learning regression to predict chromium layer thickness in decorative trivalent chromium electroplating, using 441 experiments from laboratory‐scale (1L) and pilot‐scale (14L) setups. Tree‐based models, particularly CatBoost, outperformed linear regression by capturing nonlinear parameter interactions (R2$R^2$ up to 0.77 ...
Christoph Baumer, Christopher Mai, Luca Eisentraut, Andreas Bund, Ricardo Buettner   +4 more
wiley   +1 more source

A Web-Based Platform for Nanoscale Non-Classical Device Modeling and Circuit Performance Simulation

, 2009
This paper describes a web-based platform for nanoscale non-classical device modeling and circuit simulation, especially for non-classical CMOS device compact modeling and circuit performance prediction.
Zhang, Jian, Xiufang Zhang, Xinnan Lin, Zhuang, Hao, Lin, Xinnan, Zhang, Lining, Lining Zhang, He, Frank, Jian Zhang, Chan, Mansun, Zhang, Xiufang, Frank He, Hao Zhuang, Mansun Chan   +13 more
core   +1 more source

Comparison of atomistic quantum transport and numerical device simulation for carbon nanotube field-effect transistors

, 2022
S.261-264Carbon nanotube field-effect transistors (CNTFETs) are studied using atomistic quantum transport simulation and numerical device simulation. The studied CNTFETs consist of n-doped source-and drain-electrodes with an ideal wrap-around gate.
Fuchs, Florian, Mothes, S., Zienert, Andreas, Gemming, S., Claus, M., Schuster, Jörg   +5 more
core   +1 more source