Results 81 to 90 of about 4,408,931 (301)

Intermediate Resistive State in Wafer‐Scale Vertical MoS2 Memristors Through Lateral Silver Filament Growth for Artificial Synapse Applications

Advanced Functional Materials, EarlyView.
In MOCVD MoS2 memristors, a current compliance‐regulated Ag filament mechanism is revealed. The filament ruptures spontaneously during volatile switching, while subsequent growth proceeds vertically through the MoS2 layers and then laterally along the van der Waals gaps during nonvolatile switching.
Yuan Fa, Milan Buttberg, Ke Ran, Rana Walied Ahmad, Dennis Braun, Lukas Völkel, Jimin Lee, Sofía Cruces, Bart Macco, Bárbara Canto, Holger Lerch, Thorsten Wahlbrink, Holger Kalisch, Michael Heuken, Andrei Vescan, Joachim Mayer, Zhenxing Wang, Ilia Valov, Stephan Menzel, Max C. Lemme   +19 more
wiley   +1 more source

Wearable Smart Patches on Sustainable Chitosan With Reversible Microbial Growth‐Inhibitory Properties

Advanced Functional Materials, EarlyView.
ABSTRACT Chitosan, a polysaccharide upcycled from biowaste, has long promised sustainable, biocompatible, and antimicrobial films and devices, an appeal reinforced by its recent regulatory recognition, with several chitosan‐based antibacterial dressings gaining clearance through the Food and Drug Administration's 510(k) pathway.
Jacopo Nicoletti, Kubra Kocak, Andrea Michel, Enrico Cavarzerani, Ali Raza, Petr Rohzin, Nouha Loudhaief, Saimir Frroku, Nicolò Baldovin, Hazrat Bilal, Alvise Perosa, Maurizio Selva, Flavio Rizzolio, Luca Sbuelz, Sabrina Tamburini, Domenico De Fazio, Giovanni Antonio Salvatore   +16 more
wiley   +1 more source

Simulation and enhancement of a cardiovascular device test rig [PDF]

, 2010
Cardiovascular assist devices are tested in mock circulation loops (MCLs) prior to animal and clinical testing. These MCLs rely on characteristics such as pneumatic parameters to create pressure and flow, and pipe dimensions to replicate the resistance ...
Pearcy, Mark, Gregory, Shaun D, Greatrex, Nicholas, Fraser, John F, Timms, Daniel, Gaddum, Nick, Pearcy, Mark J., Timms, Daniel L., Gaddum, Nicholas Richard, Gregory, Shaun, Fraser, John F.   +10 more
core   +1 more source

Numerical Simulation of Nanoscale Double-Gate MOSFETs

Acta Polytechnica, 2006
The further improvement of nanoscale electron devices requires support by numerical simulations within the design process. After a brief description of our SIMBA 2D/3D-device simulator, the results of the simulation of DG-MOSFETs are represented ...
R. Stenzel, L. Müller, T. Herrmann, W. Klix   +3 more
doaj  

Structural analyses and photovoltaic device simulations in two and three dimensions applied to Ag-alloyed Cu(In,Ga)Se2 solar cells

JPhys Energy
The present study reports on the structural changes and related photovoltaic properties resulting from the addition of Ag in Cu(In,Ga)Se _2 (CIGS)-based thin-film solar cells analysed using two-dimensional (2D) and three-dimensional (3D) analytical and ...
Chang-Yun Song, Zelong Wang, Matthias Maiberg, Heiko Kempa, Julia Horstmann, Wolfram Witte, Rico Gutzler, Dimitrios Hariskos, Daniel Abou-Ras, Sinju Thomas, Roland Scheer, Ali Gholinia   +11 more
doaj   +1 more source

A Novel Bulk Planar Junctionless Field-Effect Transistor for High-Performance Biosensing

Biosensors
Biologically sensitive field-effect transistors (BioFETs) have advanced the biosensing capabilities in various fields such as healthcare, security and environmental monitoring.
Jeongmin Son, Chan Heo, Hyeongyu Kim, M. Meyyappan, Kihyun Kim   +4 more
doaj   +1 more source

Optoelectronic Synaptic Devices Using Molecular Telluride Phase‐Change Inks for Three‐Factor Learning

Advanced Functional Materials, EarlyView.
Optoelectronic synaptic devices based on solution‐processed molecular telluride GST‐225 phase‐change inks are demonstrated for three‐factor learning. A global optical signal broadcast through a silicon waveguide induces non‐volatile conductance updates exclusively in locally electrically flagged memristors.
Kevin Portner, Dhananjeya Kumaar, Giacomo Torti, Killian Keller, Till Zellweger, Florian M. Schenk, Christoph Weilenmann, Daniel Chelladurai, Vara Prasad Jonnalagadda, Ghazi Sarwat Syed, Vanessa Wood, Jürg Leuthold, Alexandros Emboras, Maksym Yarema, Mathieu Luisier   +14 more
wiley   +1 more source

Simulation of single electronic device and robust circuit construction

, 2007
The article mainly focuses on the simulation of the single electron device and circuit. The orthodox model of single electronic device is introduced and the simulation with Matlab and Pspice is illustrated in the article.
Zhou, KD, Lu, HX, Zhou, KD, Chinese Acad Sci, Inst Semicond, Lab Artificial Neural Networks, Beijing 100864, Peoples R China.   +2 more
core  

RF analysis methodology for Si and SiGe FETs based on transient Monte Carlo simulation [PDF]

, 1999
A comprehensive analysis methodology allowing investigation of the RF performance of Si and strained Si:SiGe MOSFETs is presented. It is based on transient ensemble Monte Carlo simulation which correctly describes device transport, and employs a finite ...
Barker, J.R., Asenov, A., Kaya, S., Roy, S., J.R. Barker, S. Kaya, A. Asenov, S. Roy   +7 more
core   +1 more source

Theoretical Model of Resonant Tunneling Diode Photodetector

Photonics
RTD photodetectors have been widely applied in fields such as gas detection, weak signal detection, and single-photon detection. However, during further device design and optimization, it has been found that existing theoretical models cannot fully ...
Guanliang Chen, Zhenyun Tang, Jin Yang, Zhongxian Wang, Sanjie Liu, Huiyun Wei, Mingzeng Peng, Zhigang Song, Xinhe Zheng   +8 more
doaj   +1 more source