Results 51 to 60 of about 13,935 (298)
Oxygen‐tunnel (OT) indium tin oxide (ITO) vertical channel transistors (VCTs) enable reliable, high‐density gain‐cell memory for monolithic 3D integration. A sandwiched SiN/SiO2/SiN OT stack selectively regulates oxygen transport, suppressing parasitic electrode oxidation while stabilizing channel oxygen vacancies, thereby suppressing carrier injection
Hyeonho Gu +17 more
wiley +1 more source
Oligomer semiconductor/dielectric interface modification for organic thin film transistor hysteresis reduction [PDF]
In this work, we investigate the hydroxyl group effect on hysteresis of the low voltage organic thin film transistor (OTFT). A high k material, hafnium oxide, is utilized as gate dielectric to reduce OTFT operational voltage.
張書通 +6 more
core +1 more source
Omnipolar Magnetic Field Detection by Superlattice‐Based Hall Sensor
Magnetic‐field‐induced electronic switching is demonstrated in unit‐cell‐engineered La0.7Sr0.3MnO3–BiFeO3 superlattices. Distinct substrate terminations modify magnetic and transport properties. Hall resistance measurements show omnipolar, hysteretic anomalous Hall switching above the Curie temperature, arising from Fe─Mn interfacial exchange, enabling
Mark Huijben +6 more
wiley +1 more source
HYSTERESIS OF BLOOD DIELECTRIC CHARACTERISTICS - TEMPERATURE RELATIONSHIP
The paper presents the results of the study of dielectric blood characteristics - 20% solution of human albumin, 40% solution of glucose and 0,9% solution of NaCl, at the temperature ranging from 30 to 42 °C and the frequency of 0,6 GHz. At 37 °C the blood and albumin showed an abrupt increase in absorption.
A. N. Romanov +4 more
openaire +2 more sources
A three‐dimensional magnetic field sensor is realized in chiral W/CoFeB/MgO multilayers, where spin–orbit torques reversibly reconfigure homochiral stripe domains. The symmetry of the torque enables offset‐free in‐plane sensing, while the reproducible domain reconfiguration extends the linear out‐of‐plane range. An anomalous Hall readout delivers large‐
Sabri Koraltan +16 more
wiley +1 more source
Dynamic Contact Angles and Hysteresis under Electrowetting-on-Dielectric [PDF]
By designing and implementing a new experimental method, we have measured the dynamic advancing and receding contact angles and the resulting hysteresis of droplets under electrowetting-on-dielectric (EWOD). Measurements were obtained over wide ranges of
Chang-Jin “CJ” Kim (2176454) +2 more
core +1 more source
The dissipative dynamic performances of dielectric elastomer actuator with viscoelastic effects
With large deformability and high energy density, Dielectric elastomers (DEs) deserve interest in soft robotics. Many challenges remain in the real-world applications, for the dynamic performance of dielectric elastomer actuator and their energy ...
Jin Li +4 more
doaj +1 more source
Ferroelectric tunnel junction devices based on epitaxial undoped ferroelectric HfO2 films demonstrate stable switching endurance of over 106 switching cycles, low write voltages of ±3 V, 16 measured resistance states, and neuromorphic capability.
Markus Hellenbrand +13 more
wiley +1 more source
Table1_Engineering Bilayer AlOx /YAlOx Dielectric Stacks for Hysteresis-Free Switching in Solution-Processed Metal-Oxide Thin-Film Transistors.DOCX [PDF]
Solution processing and low-temperature annealing (T x) as a positive charge trapping insulator and yttrium aluminum oxide (YAlOx) as a negative charge trapping dielectric to obtain hysteresis free switching in the solution-processed metal-oxide thin ...
Sami Bolat (7419533) +6 more
core +1 more source
Wafer‐scale two‐dimensioanl In2Se3 oxidized into InOx on sodium‐embedded beta‐alumina enables multifunctional reconfigurable electronics. Sodium ions accumulate within distinct spatial distribution under drain‐controlle and gate‐controlled operation. Drain‐control operation gives controllability of ultraviolet‐driven optoelectronic synaptic conductance
Jinhong Min +13 more
wiley +1 more source

