Results 61 to 70 of about 813,582 (314)

Theoretical Approach to Electroresistance in Ferroelectric Tunnel Junctions [PDF]

, 2016
In this paper, a theoretical approach, comprising the non-equilibrium Green's function method for electronic transport and Landau-Khalatnikov equation for electric polarization dynamics, is presented to describe polarization-dependent tunneling ...
Chang, Sou-Chi, Gruverman, Alexei, Naeemi, Azad, Nikonov, Dmitri E.   +3 more
core   +3 more sources

HYSTERESIS OF BLOOD DIELECTRIC CHARACTERISTICS - TEMPERATURE RELATIONSHIP

Russian Journal of Biotherapy, 2015
The paper presents the results of the study of dielectric blood characteristics - 20% solution of human albumin, 40% solution of glucose and 0,9% solution of NaCl, at the temperature ranging from 30 to 42 °C and the frequency of 0,6 GHz. At 37 °C the blood and albumin showed an abrupt increase in absorption.
A. N. Romanov, A. O. Kovrigin, A. F. Lazarev, V. A. Lubennikov, D. A. Romanov   +4 more
openaire   +2 more sources

MOFs and COFs in Electronics: Bridging the Gap between Intrinsic Properties and Measured Performance

Advanced Functional Materials, Volume 36, Issue 43, 29 May 2026.
Metal‐organic frameworks (MOFs) and covalent organic frameworks (COFs) hold promise for advanced electronics. However, discrepancies in reported electrical conductivities highlight the importance of measurement methodologies. This review explores intrinsic charge transport mechanisms and extrinsic factors influencing performance, and critically ...
Jonas F. Pöhls, R. Thomas Weitz
wiley   +1 more source

The dissipative dynamic performances of dielectric elastomer actuator with viscoelastic effects

Materials Research Express, 2022
With large deformability and high energy density, Dielectric elastomers (DEs) deserve interest in soft robotics. Many challenges remain in the real-world applications, for the dynamic performance of dielectric elastomer actuator and their energy ...
Jin Li, Yao Zhang, TuanDung Nguyen, Lijie Sun, DanhQuang Tran   +4 more
doaj   +1 more source

Room temperature multiferroicity in orthorhombic LuFeO$_3$

, 2014
From the measurement of dielectric, ferroelectric, and magnetic properties we observe simultaneous ferroelectric and magnetic transitions around $\sim$600 K in orthorhombic LuFeO$_3$. We also observe suppression of the remanent polarization by $\sim$95\%
Dipten Bhattacharya, Goswami S., Jiten Ghosh, Samya Neogi, Soumen Basu, Sudipta Goswami, Ujjal Chowdhury   +6 more
core   +1 more source

Intermediate Resistive State in Wafer‐Scale Vertical MoS2 Memristors Through Lateral Silver Filament Growth for Artificial Synapse Applications

Advanced Functional Materials, EarlyView.
In MOCVD MoS2 memristors, a current compliance‐regulated Ag filament mechanism is revealed. The filament ruptures spontaneously during volatile switching, while subsequent growth proceeds vertically through the MoS2 layers and then laterally along the van der Waals gaps during nonvolatile switching.
Yuan Fa, Milan Buttberg, Ke Ran, Rana Walied Ahmad, Dennis Braun, Lukas Völkel, Jimin Lee, Sofía Cruces, Bart Macco, Bárbara Canto, Holger Lerch, Thorsten Wahlbrink, Holger Kalisch, Michael Heuken, Andrei Vescan, Joachim Mayer, Zhenxing Wang, Ilia Valov, Stephan Menzel, Max C. Lemme   +19 more
wiley   +1 more source

Ferrielectricity in smectic-C* dechiralisation lines lattices

, 2015
Recent experiments probing a new ferroelectric liquid crystal (CLF08) confined in cells with planar alignment have shown dielectric and optic anomalies suggesting the onset of ferrielectric ordering within the surface lattice of dechiralisation lines. We
Gagou, Y., Gisse, P., Logbo, H. Pasco, Mettout, B., Vasseur, H.   +4 more
core   +3 more sources

Oxygen‐Tunnel Indium Tin Oxide Vertical Channel Transistors with Enhanced Current Density and Reliability for Monolithic 3D Compute‐In‐Memory Systems

Advanced Functional Materials, EarlyView.
Oxygen‐tunnel (OT) indium tin oxide (ITO) vertical channel transistors (VCTs) enable reliable, high‐density gain‐cell memory for monolithic 3D integration. A sandwiched SiN/SiO2/SiN OT stack selectively regulates oxygen transport, suppressing parasitic electrode oxidation while stabilizing channel oxygen vacancies, thereby suppressing carrier injection
Hyeonho Gu, Haksoon Jung, Yongwoo Lee, Hoichang Jeong, Yanfeng Zhao, Heesoo Yang, Minho Park, Hyeonjin Lee, Seunghun Baek, Minju Song, Junghwan Kim, Youngmin Jo, Hyunjin Park, Munhyeon Kim, Jae‐Joon Kim, Kyuho Jason Lee, Byungjo Kim, Jimin Kwon   +17 more
wiley   +1 more source

Effect of La and Si additives in Zr-doped HfO2 capacitors for pseudo-linear high-κ dielectric applications

Nano Convergence
This study investigates the impact of dopants on Hf1–xZrxO2-based capacitors for high-performance, hysteresis-free dielectric applications. Control of the crystalline structure of Hf1–xZrxO2 films is crucial for achieving superior dielectric properties ...
Minjong Lee, Yong Chan Jung, Jin-Hyun Kim, Dushyant M. Narayan, Sehun Kang, Woo Young Park, Kivin Im, Jiyoung Kim   +7 more
doaj   +1 more source

Enhancing discharged energy density and suppressing dielectric loss of poly(vinylidene fluoride-ter-trifluoroethylene-ter-chlorofluoroethylene) by a sandwiched structure

IET Nanodielectrics, 2018
Polymer dielectrics with high energy density and low dielectric loss are highly desired due to the rapid development of electric devices. Among known polymers, poly(vinylidene fluoride-ter-trifluoroethylene-ter-chlorofluoroethylene) P(VDF-TrFE-CFE) is ...
Yingke Zhu, Pingkai Jiang, Xingyi Huang
doaj   +1 more source