Results 71 to 80 of about 429,377 (286)
Tantalum–Palladium Ultrathin Resistance Hydrogen Sensor
Advanced Functional Materials, EarlyView.Nanoconfined Ta‐alloy thin films enable fast, reversible hydrogen sensing by suppressing unwanted phase transitions. A Ta0.88${\rm Ta}_{0.88}$Pd0.12${\rm Pd}_{0.12}$ sensing layer delivers hysteresis‐free detection from ppb to 100% H2${\rm H}_2$ at room temperature.
Folkert Isaäc Bernhard Straus +2 more
wiley +1 more source
Three competing conceptualizations of hysteresis in economics are identified: the unit/zero root approach, “true” hysteresis, and hysteresis conceived as a product of historical time.
Mark Setterfield
core
Exceptional Electro‐Optic Coefficient Unlocked via Polarization Swaying in KNbO3 Thin Films
Advanced Functional Materials, EarlyView.We present the largest reported electro‐optic response in any material to date, guided by a new design principle that exploits ultralow coercive field polarization swaying enabled by low‐symmetry ferroelectric phases in monoclinic KNbO3 thin films for energy‐efficient classical and quantum photonic integrated circuits. ABSTRACT The electro‐optic effect
Sankalpa Hazra +11 more
wiley +1 more source
Gallium arsenide field effect transistors microstrip integrated circuit dielectric resonator oscillators [PDF]
, 1988 Bibliography: leaves 175-177.This thesis is concerned with Gallium Arsenide Metal Semiconductor Field Effect Transistor Microstrip Integrated Circuit Dielectric Resonator Oscillators (GaAs MESFET MIC DROs) - the different types, their design and their ...
Crouch, David Andrew
core +1 more source
Design of 50nm Vertical MOSFET Incorporating a Dielectric Pocket
, 2004 A new architecture for a vertical MOS transistor is proposed that incorporates a so-called dielectric pocket (DP) for suppression of short channel effects and bulk punch-through.
Donaghy, D +4 more
core +1 more source
Advanced Functional Materials, EarlyView.Neuromorphic plasticity in OECTs is governed by the post‐stimulus evolution of coupled ionic and electronic states. Semiconductor chemistry and morphology, electrolyte composition and interfaces, and device architecture regulate ion injection, transport, confinement, and release, shifting responses from rapidly relaxing STP to metastable memory and ...
Inho Lee +9 more
wiley +1 more source
Advanced Functional Materials, EarlyView.Single‐crystalline LaOCl and GdOCl form atomically abrupt, Cl‐terminated interfaces with MoS2, enabling near‐ideal switching and suppressed flicker noise. Carrier‐number‐fluctuation analysis yields effective noise‐derived interface trap densities of 1.15–1.94 × 1010 cm−2 eV−1, approaching hexagonal boron nitride levels with high‐κ coupling.
Chanho Lee +10 more
wiley +1 more source
Efficient Magnetization Switching Driven by Orbital Torque in Light 3d Transition‐Metal Nitrides
Advanced Functional Materials, EarlyView.Efficient magnetization switching is demonstrated through orbital torque generated from light 3d transition‐metal nitride. Transition‐metal nitrides are established as effective sources of orbital angular momentum for current‐induced switching, highlighting their potential for low‐power next‐generation orbitronic devices beyond conventional heavy‐metal‐
Gaurav K. Shukla +3 more
wiley +1 more source
Advanced Functional Materials, EarlyView.Iontronic gating in a battery‐inspired device modulates the relative weight of surface‐associated and bulk‐like transport fingerprints in (Bi1‐xSbx)2Te3, resulting in phenomenological valve‐like transport behavior. The strongest WAL‐associated coherent transport signatures emerge near the transport‐defined carrier compensation regime at ultra‐low gate ...
Gabriel Vinicius de Oliveira Silva +5 more
wiley +1 more source
, 2010 Here, we report on the fabrication of low-voltage-operating pentacene-based organic field-effect transistors (OFETs) that utilize crosslinked cyanoethylated poly(vinyl alcohol) (CR-V) gate dielectrics.
Won Min Yun +6 more
core +2 more sources