Results 81 to 90 of about 813,582 (314)

Omnipolar Magnetic Field Detection by Superlattice‐Based Hall Sensor

open access: yesAdvanced Functional Materials, EarlyView.
Magnetic‐field‐induced electronic switching is demonstrated in unit‐cell‐engineered La0.7Sr0.3MnO3–BiFeO3 superlattices. Distinct substrate terminations modify magnetic and transport properties. Hall resistance measurements show omnipolar, hysteretic anomalous Hall switching above the Curie temperature, arising from Fe─Mn interfacial exchange, enabling
Mark Huijben   +6 more
wiley   +1 more source

Ferroelectricity and structure of BaTiO3 grown on YBa2Cu3O7-d thin films

open access: yes, 2000
We have investigated the crystal structure and the ferroelectric properties of BaTiO3 thin films with YBa2Cu3O7-d as the bottom and Au as the top electrode.
Adrian, H.   +4 more
core   +1 more source

Thermally Engineered Sodium‐Embedded Alumina with Programmable Synaptic Plasticity for Neuromorphic Transistors

open access: yesAdvanced Functional Materials, EarlyView.
A fully transparent, all‐metal‐oxide neuromorphic transistor using a sodium‐embedded alumina (SEA) electrolyte is demonstrated. By precisely tuning the thermal annealing process, the chemical composition of the SEA layer is controlled, allowing for the deterministic realization of both short‐term and long‐term synaptic plasticity within the same device
Yonghyun Albert Kwon   +7 more
wiley   +1 more source

New, Lead Free, Perovskites With a Diffuse Phase Transition: NaNbO_{3} ~ Solid Solutions

open access: yes, 2002
Some of (1-x)NaNbO_3-(x)ABO_3 perovskite solid solutions exhibit a dramatic diffusion of the dielectric permittivity epsilon' maximum and relaxor-type behavior when the second component concentration exceeds a threshold value x_0. The concentration phase
Prosandeev, S. A., Raevski, I. P.
core   +2 more sources

Inverse Hysteresis and Ultrasmall Hysteresis Thin‐Film Transistors Fabricated Using Sputtered Dielectrics

open access: yesAdvanced Electronic Materials, 2017
Large current hysteresis is observed in carbon nanotube (CNT) transistors and usually shows as a positive threshold voltage shift when the gate sweeping direction changes from positive to negative. This paper reports fabrication of inverse hysteresis CNT thin‐film transistors (TFTs) using magnetron sputtered oxide as a dielectric.
Yudan Zhao   +8 more
openaire   +1 more source

Achieving High ON State Current through Ferroelectric Polarization‐Dependent Interfacial Resistance Switching in Undoped Orthorhombic HfO2 Films

open access: yesAdvanced Functional Materials, EarlyView.
Ferroelectric tunnel junction devices based on epitaxial undoped ferroelectric HfO2 films demonstrate stable switching endurance of over 106 switching cycles, low write voltages of ±3 V, 16 measured resistance states, and neuromorphic capability.
Markus Hellenbrand   +13 more
wiley   +1 more source

Comparative study on aging effect in BiFeO3 thin films substituted at A- and B-site

open access: yes, 2011
Typical characteristics of aging effect, double hysteresis loops, were observed in (100)-oriented Bi0.95Ca0.05FeO3 (BCFO) and BiFe0.95Ni0.05O3 (BFNO) films grown on LaNiO3(100)/Si substrates.
Cheng, Ling   +4 more
core   +1 more source

Design Strategies and Emerging Applications of High‐Performance Flexible Piezoresistive Pressure Sensors

open access: yesAdvanced Functional Materials, EarlyView.
Flexible piezoresistive pressure sensors underpin wearable and soft electronics. This review links sensing physics, including contact resistance modulation, quantum tunneling and percolation, to unified materials/structure design. We highlight composite and graded architectures, interfacial/porous engineering, and microstructured 3D conductive networks
Feng Luo   +2 more
wiley   +1 more source

Control of multiferroic domains by external electric fields in TbMnO3

open access: yes, 2015
The control of multiferroic domains through external electric fields has been studied by dielectric measurements and by polarized neutron diffraction on single-crystalline TbMnO$_3$.
Baum, M.   +6 more
core   +1 more source

Engineering Intelligent Graphene Oxide‐Cellulose Membranes: Suppressing Thermal Runaway for a Safer Aqueous Zinc‐Ion Batteries

open access: yesAdvanced Functional Materials, EarlyView.
A novel thermos‐responsive hydroxypropyl cellulose/graphene oxide (HPC/GO) composite membrane is fabricated for reversible temperature‐gated ion transport in aqueous zinc‐ion batteries. Enabled by LCST‐driven structural transition, unimpeded ion diffusion at room temperature delivers high capacity, while elevated temperature suppresses transport; full ...
Xueli Bi   +9 more
wiley   +1 more source

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