Results 91 to 100 of about 13,935 (298)

Performance Enhancement of Tin Chloride‐Incorporated Ferroelectric Polymer‐Based Artificial Synapse for Hardware Neural Networks

Advanced Functional Materials, EarlyView.
This paper proposes a highly efficient ferroelectric artificial synapse device based on an oxide semiconductor and SnCl2‐inserted P(VDF‐TrFE) gate dielectric layer. This FeFET significantly improved the synaptic performance due to the ion‐dipole interaction.
Hyun‐Soo Kim, Hyunkyu Lee, Yeonho Choi, Won Young Jang, Hyungmin Kim, Krishna Moorthy Ponnusamy, Hongseung Lee, Jaewook Yoo, Ji Ye Lee, S. Chandramohan, Seongin Hong, Hagyoul Bae, Hyeon‐Sik Jang, Sang Yeol Lee, Keun Heo   +14 more
wiley   +1 more source

A Physical Model for the Hysteresis in MoS₂ Transistors

IEEE Journal of the Electron Devices Society, 2018
Even though the hysteresis in the gate transfer characteristics of two-dimensional (2D) transistors is a frequently encountered phenomenon, the physics behind it are up to now only barely understood, let alone modeled.
Theresia Knobloch, Gerhard Rzepa, Yury Yu. Illarionov, Michael Waltl, Franz Schanovsky, Bernhard Stampfer, Marco M. Furchi, Thomas Mueller, Tibor Grasser   +8 more
doaj   +1 more source

Ultrawide Bandwidth Optomechanical Magnetometry Using Flux Concentration

Advanced Functional Materials, EarlyView.
High‐permeability flux concentrators enable ultrawide‐bandwidth chip‐scale optomechanical magnetometry by exploiting magnetic nonlinearity to up‐convert low‐frequency fields to the mechanical resonance, where sensitivity is optimal. This enables flat wideband operation over more than four orders of magnitude, from tens of kilohertz to sub‐hertz ...
Benjamin J. Carey, Nathaniel Bawden, Fernando Gottardo, James S. Bennett, Douglas Bulla, Scott Foster, Warwick P. Bowen   +6 more
wiley   +1 more source

Mimicking Silent Synapse Recruitment: A SiOx/Cu‐Pancake Memristive Device For Analog Neuromorphic Computing

Advanced Functional Materials, EarlyView.
Electroforming‐free TiN/SiOx/Cu/SiOx/TiN memristive devices exploit pancake‐like Cu nanoparticles embedded in a SiOx double layer to create a heterogeneous Schottky‐barrier landscape. Under bias, oxygen‐vacancy redistribution progressively lowers local barriers and recruits initially inactive Cu‐PC pathways into a parallel conduction ensemble, enabling
Rouven Lamprecht, Ole Gronenberg, Sahitya Yarragolla, Tobias Gergs, Richard Marquardt, Victor Witte, Jürgen Carstensen, George Popkirov, Jan Trieschmann, Lorenz Kienle, Hermann Kohlstedt   +10 more
wiley   +1 more source

Suppression of hysteresis in ultrathin tellurium transistors

npj 2D Materials and Applications
Tellurium (Te) is a promising p-type semiconductor but suffers from pronounced electrical hysteresis that limits device stability. The origin of hysteresis in Te field-effect transistors is investigated, and effective suppression strategies are ...
Sung-Tsun Wang, Kai-Wei Li, Tzu-Ting Weng, Yu-Cheng Chang, Chia-Chen Chung, Chia-Hung Lo, Shih-Chieh Chen, Tanveer Ahmed, Ciao-Fen Chen, Chan-Yuen Chang, Shun-Tsung Lo, Yen-Fu Lin, Terry Y. T. Hung, Chao-Ching Cheng, Iuliana P. Radu, Yu-Lun Chueh, Der-Hsien Lien   +16 more
doaj   +1 more source

Hysteresis Dynamics in Double-Gated n-Type WSe₂ FETs With High-k Top Gate Dielectric

IEEE Journal of the Electron Devices Society, 2019
We propose double-gated n-type WSe2 FETs with low leakage, low hysteresis top gate high-k dielectric stack. The top gate dielectric layer is deposited by HfO2 ALD on an Al2O3 seed layer obtained from the evaporation and oxidation by air exposure of a 1.5
Nicolo Oliva, Yury Yu Illarionov, Emanuele A. Casu, Matteo Cavalieri, Theresia Knobloch, Tibor Grasser, Adrian M. Ionescu   +6 more
doaj   +1 more source

Monolithic Oxidation Enables Ultrathin Vertically Graded Tantalum Oxide for Low‐Voltage, Low‐Variability Memristive Switching

Advanced Functional Materials, EarlyView.
Monolithic UV‐ozone oxidation of Ta forms an ultrathin Ta2O5/TaOx bilayer enabling resistive switching with a vertical defect gradient. A stoichiometric surface layer over an oxygen‐deficient sublayer promotes localized filament nucleation near the top interface, enabling low‐voltage operation, and reduced cycle‐to‐cycle variability.
Seunghoon Yang, Dong Hyun Lee, Conan Weiland, Won‐Il Lee, Kim Kisslinger, Mingzhao Liu, Aswin kumar Anbalagan, Xiao Tong, Soumyajit Mandal, Nikhil Tiwale, Houk Jang, Chang‐Yong Nam   +11 more
wiley   +1 more source

A Material‐Agnostic Strategy for Uniform Patterning of Conjugated Polymers Unveils the True Role of Porosity in Organic Electrochemical Transistors

Advanced Functional Materials, EarlyView.
A generalizable strategy for fabricating regular porous, chemically intact conjugated polymer channels reveals how porosity benefits organic electrochemical transistors. Composition‐dependent performance enhancement is linked to charge carrier mobility, volumetric capacitance, and effective doped volume.
Geon Gug Yang, Camille E. Cunin, Rebecca F. Meacham, Sang Ouk Kim, Aristide Gumyusenge   +4 more
wiley   +1 more source

Modeling and Discrete-Time Terminal Sliding Mode Control of a DEAP Actuator with Rate-Dependent Hysteresis Nonlinearity

Applied Sciences, 2019
Dielectric electro-active polymer (DEAP) materials, also called artificial muscle, are a kind of EAP smart materials with extraordinary strains up to 30% at a high driving voltage.
Mengmeng Li, Qinglin Wang, Yuan Li, Zhaoguo Jiang   +3 more
doaj   +1 more source

Giant Electrostriction in Halide Perovskites Revisited With Double‐Modulation Interferometry

Advanced Functional Materials, EarlyView.
A giant electrostrictive effect in lead halide perovskites had been reported previously. This work uses sensitive interferometry to measure the electromechanical response of various halide perovskite samples. The results reveal no intrinsic electrostrictive compression. Instead, the materials expand primarily under an applied electric field as a result
Philipp Ramming, Markus Griesbach, Ralf Moos, Lothar Kador, Anna Köhler   +4 more
wiley   +1 more source