Results 91 to 100 of about 813,582 (314)

Polymer Interface Enables Reversible Quasi‐Solid Sulfur Conversion in Sodium‐Sulfur Batteries

Advanced Functional Materials, EarlyView.
The polymer interface enables a stable quasi‐solid sulfur conversion pathway in room‐temperature Na─S batteries. The coating regulates Na+ transport, stabilizes the cathode–electrolyte interphase, and accommodates mechanical stress, suppressing electrolyte decomposition and sulfur migration, thereby improving reaction uniformity, reducing polarization,
Reza Andaveh, Ying Zhao, Enzhong Jin, Zixin Zhang, Vinicius Martins, Parham Pirayesh, Yi Gan, Yi Yuan, Yijia Wang, Frederick Benjamin Holness, Changhong Cao, Jun Song, Yang Zhao   +12 more
wiley   +1 more source

Rationally Designed Bilayer Passivation Strategy for High‐Performance Vacuum‐Processed Perovskite Solar Cells

Advanced Functional Materials, EarlyView.
A bilayer “Anchor‐and‐Seal” passivation strategy using EDAI2 and 4MeO‐PEAI effectively mitigates surface defects in vacuum‐processed perovskite films through synergistic hydrogen bonding and Lewis base coordination. This approach optimizes interfacial energy alignment and suppresses non‐radiative recombination, enabling vacuum‐deposited p‐i‐n ...
Mohammadhossein Kohan, Sang‐Heon Lee, Jaswinder Singh, Sung‐Nam Kwon, Seok‐In Na   +4 more
wiley   +1 more source

Temperature-Dependent Phase Transition in Orthorhombic [011]c Pb(Mg1/3Nb2/3) O3-0.35PbTiO3 Single Crystal

Crystals, 2014
Relaxor [011]c PMN-0.35PT single crystal phase transition characteristics are investigated through various methods including variable temperature dielectric properties, X-ray diffraction, bipolar ferroelectric hysteresis loops (P-E) and electric-field ...
Wenhui He, Qiang Li, Qingfeng Yan, Nengneng Luo, Yiling Zhang, Xiangcheng Chu, Dezhong Shen   +6 more
doaj   +1 more source

Self‐Healing and Stretchable Synaptic Transistor

Advanced Functional Materials, EarlyView.
A self‐healing stretchable synaptic transistor (3S‐T) is realized using a p‐PVDF‐HFP‐DBP/PDMS‐MPU‐IU bilayer as gate insulator, where dipole‐dipole interaction enhances polarization to achieve a large memory window. Leveraging its neuronal biomimicry, the synaptic transistor demonstrates electrically compatibility with the biological brain. Furthermore,
Hyongsuk Choo, Sangyong Park, Yoonyi Jeong, Jaepyo Jang, Duhwan Seong, In Soo Kim, Myung‐Gil Kim, Mikyung Shin, Minah Suh, Donghee Son, Jin‐Hong Park   +10 more
wiley   +1 more source

Abrupt appearance of the domain pattern and fatigue of thin ferroelectric films

, 2000
We study the domain structure in ferroelectric thin films with a `passive' layer (material with damaged ferroelectric properties) at the interface between the film and electrodes within a continuous medium approximation.
A. Gruverman, A. Hubert, A. K. Kholkin, A. K. Tagantsev, A. Kopal, A. M. Bratkovsky, A. P. Levanyuk, B. A. Strukov, C. Kittel, D. J. Taylor, D. M. Smyth, E. V. Chensky, E. V. Chensky, H. F. Kay, H. M. Duiker, L. D. Landau, M. E. Drougard, P. W. Blom, R. Landauer, S. B. Desu, S. L. Miller, T. Mitsui, V. Janovec, V. V. Lemanov, V. V. Lemanov, Y. Watanabe, Y. Watanabe   +26 more
core   +1 more source

Solution‐Processed Two‐Dimensional Indium Oxide on Sodium‐Embedded Alumina for Reconfigurable Optoelectronic Synaptic Transistors

Advanced Functional Materials, EarlyView.
Wafer‐scale two‐dimensioanl In2Se3 oxidized into InOx on sodium‐embedded beta‐alumina enables multifunctional reconfigurable electronics. Sodium ions accumulate within distinct spatial distribution under drain‐controlle and gate‐controlled operation. Drain‐control operation gives controllability of ultraviolet‐driven optoelectronic synaptic conductance
Jinhong Min, Yonghyun Albert Kwon, Hyunbin Kim, Jihyun Kim, Myeongjin Jung, Jaewon Heo, Gwang Ya Kim, Vlastimil Mazanek, Zdeněk Sofer, In Soo Kim, Jeong Ho Cho, Hyesung Park, Sang Min Won, Joohoon Kang   +13 more
wiley   +1 more source

A Physical Model for the Hysteresis in MoS₂ Transistors

IEEE Journal of the Electron Devices Society, 2018
Even though the hysteresis in the gate transfer characteristics of two-dimensional (2D) transistors is a frequently encountered phenomenon, the physics behind it are up to now only barely understood, let alone modeled.
Theresia Knobloch, Gerhard Rzepa, Yury Yu. Illarionov, Michael Waltl, Franz Schanovsky, Bernhard Stampfer, Marco M. Furchi, Thomas Mueller, Tibor Grasser   +8 more
doaj   +1 more source

Magnetic control of large room-temperature polarization

, 2009
Numerous authors have referred to room-temperature magnetic switching of large electric polarizations as The Holy Grail of magnetoelectricity.We report this long-sought effect using a new physical process of coupling between magnetic and ferroelectric ...
Ashok Kumar, Astrov D N, Astrov D N, Bao D, Correa M, Cross L E, Curie P, Dzyaloshinskii I E, Dzyaloshinskii I E, Fox D L, Freeman A J, G L Sharma, J F Scott, Karmarkar M, R Blinc, R Pirc, R S Katiyar, Samara G A, Scott J F, Smolenskii G A, Smolenskii G A, Smolenskii G A, van den Brink J, Ventura J, Wu E, Ye Z-G   +25 more
core   +2 more sources

Transfer Printing and Reconfiguration of Soft Electronics Using Digital Microfluidics and Laser Machining

Advanced Functional Materials, EarlyView.
This paper presents a digital microfluidics‐based technique for transferring and reconfiguring soft nanomembranes. Laser‐machined nanothin membranes are picked up, transported, and aligned via tailored surface tension and the actuation of water droplets, enabling the development of flexible electronics, the integration of functional materials on 3D ...
Quang Anh Nguyen, Chi Cong Nguyen, Tran Bach Dang, Phuoc Thien Phan, Jordan Thorpe, Michael Listyawan, Nhat Minh Doan, Sinuo Zhao, Hongru Chen, Trung Thien Hoang, Mingsheng Xu, Jisheng Han, Thanh Nho Do, Adam Hill, Timothée Mouterde, Hoang‐Phuong Phan   +15 more
wiley   +1 more source

Hysteresis Dynamics in Double-Gated n-Type WSe₂ FETs With High-k Top Gate Dielectric

IEEE Journal of the Electron Devices Society, 2019
We propose double-gated n-type WSe2 FETs with low leakage, low hysteresis top gate high-k dielectric stack. The top gate dielectric layer is deposited by HfO2 ALD on an Al2O3 seed layer obtained from the evaporation and oxidation by air exposure of a 1.5
Nicolo Oliva, Yury Yu Illarionov, Emanuele A. Casu, Matteo Cavalieri, Theresia Knobloch, Tibor Grasser, Adrian M. Ionescu   +6 more
doaj   +1 more source