Results 101 to 110 of about 813,582 (314)

Titanium Suboxides Responsible for Electronic Anomaly Near Room Temperature in the Ti3C2Tx MXene

open access: yesAdvanced Functional Materials, EarlyView.
Our multi‐technique study reveals that the near‐room‐temperature anomaly in Ti3C2Tx MXene is linked to titanium suboxide nanodomains, including Ti3O5, embedded within the MXene host. Their temperature‐driven transformation provides an alternative explanation to solvent‐ and swelling‐based models and offers new insight into the thermally activated ...
Bence G. Márkus   +8 more
wiley   +1 more source

Understanding polarization vs. charge dynamics effects in ferroelectric-carbon nanotube devices

open access: yes, 2013
To optimize the performance of multifunctional carbon nanotube-ferroelectric devices, it is necessary to understand both the polarization and charge dynamics effects on their transconductance.
Blaser, Cédric   +2 more
core   +2 more sources

Electrode and Microstructure Dependence of Oxygen Diffusion in Ferroelectric Hafnium Zirconium Oxide Thin Films

open access: yesAdvanced Functional Materials, EarlyView.
Significant nanoscale oxygen diffusion coefficient variations are measured in ferroelectric hafnium zirconium oxide films with grain boundaries and electrode interfaces exhibiting values 104 times larger than the grain cores. Overall coefficients are 10X larger for films prepared with metal nitride electrodes compared to refractory metals. New insights
Liron Shvilberg   +6 more
wiley   +1 more source

Suppression of hysteresis in ultrathin tellurium transistors

open access: yesnpj 2D Materials and Applications
Tellurium (Te) is a promising p-type semiconductor but suffers from pronounced electrical hysteresis that limits device stability. The origin of hysteresis in Te field-effect transistors is investigated, and effective suppression strategies are ...
Sung-Tsun Wang   +16 more
doaj   +1 more source

Absence of ferroelectricity in BiMnO3 ceramics

open access: yes, 2012
We performed factor-group analysis of all phonons in possible monoclinic C2/c and C2 structures of BiMnO3 and compared it with our experimental infrared and Raman spectra.
Belik, A. A.   +6 more
core   +1 more source

Moving Beyond Oligoethers: Polar Side‐Chain Engineering for Aqueous Mixed Ionic–Electronic Conductors

open access: yesAdvanced Functional Materials, EarlyView.
We investigate how side‐chain chemistry and hydrogen bonding affect electrochemical doping in poly(propylenedioxythiophene) polymers. Replacing oligoether side chains with hydroxyl or carboxylic acid groups nearly triples electrochemical conductivity.
Joshua M. Rinehart   +5 more
wiley   +1 more source

Low-voltage organic transistors and inverters with ultra-thin fluoropolymer gate dielectric

open access: yes, 2009
We report on the simple fabrication of hysteresis-free and electrically stable organic field-effect transistors (OFETs) and inverters operating at voltages
Batlogg, B.   +3 more
core   +1 more source

Integrated Field‐Free SOT Domain‐Wall Synapses and MTJ Stochastic Neurons for Hardware Boltzmann Machines

open access: yesAdvanced Functional Materials, EarlyView.
Field‐free spin‐orbit torque domain‐wall synapses integrated with stochastic MTJ neurons enable compact hardware Boltzmann machines. Leveraging intrinsic stochasticity and multi‐level conductance, the system achieves efficient probabilistic learning with high accuracy, demonstrating a scalable spintronic platform for energy‐efficient edge AI.
Aijaz H. Lone   +8 more
wiley   +1 more source

Neutron Diffraction Studies on Chemical and Magnetic Structure of Multiferroic PbFe0.67W0.33O3

open access: yes, 2014
We report on the single phase synthesis and room temperature structural characterization of PbFe0.67W0.33O3 (PFW) multiferroic. The PFW was synthesized by low temperature sintering, Columbite method.
Angadi, Basavaraj   +2 more
core   +1 more source

Historical Foundation and Practical Guideline for Ferroelectric Switching Kinetic Studies

open access: yesAdvanced Functional Materials, EarlyView.
The P and U pulses in the conventional PUND measurements are not identical because of the interplay between switching current and the measurement circuit components. This circuit effect can lead to a shift in polarization transients and misinterpreted physics in the switching kinetics.
Yi Liang, Pat Kezer, John T. Heron
wiley   +1 more source

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