Results 101 to 110 of about 13,935 (298)

Synthesis and processing of KNN powders and thick films for MEMS devices [PDF]

, 2012
Pb-free piezoelectric materials have grown in importance through increased environmental concern related to the presence of Pb and the subsequent legislation that has arisen including directives such as Waste Electrical and Electronic Equipment (WEEE ...
Lusiola, Tony
core  

Investigation of Large Strain Actuation in Barium Titanate [PDF]

, 2001
Sensors and actuators based on ferroelectric materials have become indispensable in the fields of aerospace, high technology, and medical instruments.
Burcsu, Eric Noboru
core   +1 more source

Effects of precursor solution concentration on dielectric properties of （Pb,La）（Zr,Ti）O₃ antiferroelectric thick films by sol-gel processing

Journal of Measurement Science and Instrumentation, 2013
Pb0.97La0.02Zr0.95Ti0.05O3（PLZT）antiferroelectric thick films derived from different precursor solution concentrations are prepared on platinized silicon substrates by sol-gel processing.The films present polycrystalline perovskite structure with a（100 ...
LV Yong-bo, GUO Mao-xiang, GUAN Xin-feng, CHOU Xiu-jian, ZHANG Wen-dong, Key Laboratory of Instrumentation Science &Dynamic Measurement   +5 more
doaj  

Ambient‐Stable Transparent P‐Type CuI Transistors Via Room‐Temperature Pulsed Laser Deposition

Advanced Functional Materials, EarlyView.
An in situ PLD fabricated AlOx${\rm AlO}_x$/CuI/AlOx${\rm AlO}_x$ sandwich structure enables stable CuI TFTs with a field‐effect mobility of 2.3 ±$\pm$ 0.7 cm2${\rm cm}^{2}$ V−1${\rm V}^{-1}$ s−1${\rm s}^{-1}$ and excellent ambient stability. Complementary inverters based on CuI:Rb and ZnO:Al exhibit rail‐to‐rail voltage transfer characteristics and an
Yang Chen, Susanne Selle, Michael S. Bar, Michael Lorenz, Holger von Wenckstern, Marius Grundmann   +5 more
wiley   +1 more source

Gate‐Dielectric Surface Engineering With Fluorinated Monolayers: Minimizing Contact Resistance and Nonidealities in OFETs

Advanced Electronic Materials
Organic field‐effect transistors (OFETs) hold great potential for flexible, large‐area electronics, but face challenges related to hysteresis in the transfer characteristics, contact resistance, and charge trapping.
Shaghayegh Mesforush, Alba Cazorla, Hayley Melville, Philippe Blanchard, Hagen Klauk, Ute Zschieschang, Min Zhang, Lamiaa Fijahi, Marta Mas‐Torrent, Esther Barrena   +9 more
doaj   +1 more source

Ultra-small Hysteresis IGZO Thin-Film Transistors with Room-Temperature Sputtered SiO2 as Dielectric Layer

Journal of Applied Science and Engineering
A sputtered silicon dioxide dielectric is prepared for fabrication of indium gallium zinc oxide (IGZO) thin-film transistors (TFTs). We analyzed the dependence of device characteristics on gate voltage range.
Fangfei Han, Zheng Lu, Luan Fu, Lulu Du, Xiaohui Shi   +4 more
doaj   +1 more source

Polarization‐Dependent Synaptic‐Like Electro‐Optical Response in Ferroelectric Nematic Liquid Crystals

Advanced Functional Materials, EarlyView.
Ferroelectric nematic liquid crystals (FNLCs) offer fast, tunable polarization and low‐voltage operation but suffer from poor polarization retention at zero field. Semiconductor‐modified FNLCs enhance polarization retention and exhibit short‐ and long‐term electro‐optical responses, while also supporting spike‐type signal integrations.
Kutay Sagdic, Weiming Yao, Danqing Liu
wiley   +1 more source

Hysteresis-Induced Performance Variations and Interfacial Charge Trapping Characteristics in Carbon Nanotube Thin-Film Transistors

Nanomaterials
Carbon nanotube (CNT) networks are promising candidate channel materials for thin-film transistors (TFTs). However, the charge trapping characteristics underlying the gate hysteresis effect still remain unclear.
Mingyu Liu, Bo Lai, Hannian Wang, Lele Wu, Wendi Wu, Kai Xu, Yuanchun Zhao   +6 more
doaj   +1 more source

A Thermodynamic Model of Antiferroelectics and Its Application to Electric Field Induced Antiferroelectric‐Ferroelectric Transition in PbZrO3

Advanced Functional Materials, EarlyView.
A thermodynamic model that incorporates ferroelectric, antiferroelectric, and antiferrodistortive orders of PbZrO3${\rm PbZrO}_3$ is established and parameterized based on experimental measurements and first‐principles calculations. We derive a Clapeyron‐like equation for describing the temperature‐dependence of critical electric fields for the ...
Zhiyang Wang, Guodong Zhao, Aiden Ross, Long‐Qing Chen   +3 more
wiley   +1 more source

Study on Temperature Characteristics of Ceramic Materials for Piezoelectric Actuators and Model Modification

Xibei Gongye Daxue Xuebao, 2019
The performance of piezoelectric actuator ceramics under strong electric field(20 kV/cm) and variable temperature (30~150℃) were tested on a piezoelectric ceramic thermo-electro-mechanical multi-field loading test bench. The variation of hysteresis loop,

doaj   +1 more source