Results 121 to 130 of about 13,935 (298)

3D Anodic Alumina Nanoarchitectures: A Decade of Progress from Foundational Science to Functional Metamaterials

Advanced Materials, EarlyView.
Ordered three‐dimensional anodic aluminum oxide (3D‐AAO) nanoarchitectures with longitudinal and transverse pores enable architecture‐driven metamaterials. The review maps fabrication advances, including hybrid pulse anodization, and shows how 3D‐AAO templates tailor properties across magnetism, energy, catalysis, and sensing.
Marisol Martín‐González
wiley   +1 more source

Fractional-Order Creep Hysteresis Modeling of Dielectric Elastomer Actuator and Its Implicit Inverse Adaptive Control [PDF]

Focusing on the dielectric elastomer actuator (DEA), this paper proposes a backstepping implicit inverse adaptive control scheme with creep direct inverse compensation.
Lincheng Han, Yuan Liu, Xiuyu Zhang, Xuefei Zhang, Zhiwei Li, Yue Wang   +5 more
core   +1 more source

Hysteresis In Backaction Force Mediated By Photonic Nanojet [PDF]

, 2020
We demonstrate that the dielectric microsphere swims towards the continuous wave light in response to the photonic nanojet and the hysteresis in backaction force on the pure dielectric particle under the counter propagating beams.
Cui, XM, Wong, KKY, Ren, YX, Tsia, KKM, Zhou, Y, Mao, HD, Shi, J   +6 more
core  

Ion‐Reconfigurable “N”‐Shaped Antiambipolar Behavior in Organic Electrochemical Transistors

Advanced Materials, EarlyView.
A unique N‐shaped negative differential transconductance (NDT) characteristics is demonstrated in single‐polymer organic electrochemical transistors through a sequential doping–redox–doping process driven by iodide ions. This redox‐driven mechanism enables low‐voltage, ion‐controlled reconfigurability and tunable current modulation, allowing seamless ...
Debdatta Panigrahi, Daniele Zucchelli, Zeinab Hamid, Christina Kousseff, Arup Sarkar, Aristea Pavlou, Zhitian Ling, Somayeh Kashani, Iain McCulloch, Paul W. M. Blom, Fabrizio Torricelli, Paschalis Gkoupidenis   +11 more
wiley   +1 more source

12.5 A/350 V AlGaN/GaN-on-Si MOS-HEMT with low specific on-resistance and minimal threshold hysteresis [PDF]

, 2014
An AlGaN/GaN metal-oxide semiconductor (MOS) high-electron mobility transistor (HEMT) on silicon substrate was obtained with 8 nm Al2O3 gate dielectric films grown using atomic layer deposition.
付 凯, Hou KY(侯克玉), Zhang BS(张宝顺), Liu, S, Yu GH(于国浩), Ceng CH(曾春红), Yuan, JS, Zhang ZL(张志利)   +7 more
core  

Novel hysteresis effect in ultrathin epitaxial Gd₂O₃ high-k dielectric [PDF]

, 2008
Charge trapping in ultrathin high-k Gd₂O₃ dielectric leading to appearance of hysteresis in C–V curves is studied by capacitance-voltage, conductance-frequency and current-voltage techniques at different temperatures.
Ostenc, H.J., Gomeniuk, Y.V., Lysenko, V.S., Gomeniuk, Y.Y., Schmidt, M., Nazarov, A.N., Czernohorsky, M., Gottlob, H.D.B., Lemme, M.C.   +8 more
core   +3 more sources

Evaluating eddy current behavior and magnetic loss in pure and Mn/Zn-doped NiFe2O4 spinel ferrites

Scientific Reports
Spinel ferrites of the chemical formula MxNi1-xFe2O4 (M = Mn, Zn) were prepared by minimum doping or contamination values x = %0, %5 through the co-precipitation process.
Nasrin Nazari, Mir Maqsood Golzan, Khosro Mabhouti   +2 more
doaj   +1 more source

Self‐Assembled Monolayers in p–i–n Perovskite Solar Cells: Molecular Design, Interfacial Engineering, and Machine Learning–Accelerated Material Discovery

Advanced Materials, EarlyView.
This review highlights the role of self‐assembled monolayers (SAMs) in perovskite solar cells, covering molecular engineering, multifunctional interface regulation, machine learning (ML) accelerated discovery, advanced device architectures, and pathways toward scalable fabrication and commercialization for high‐efficiency and stable single‐junction and
Asmat Ullah, Ying Luo, Stefaan De Wolf
wiley   +1 more source

Thermal‐Driven Diode Polarity Switching From Competing Helical Superconducting States in WTe2/α‐Fe2O3 Heterostructures

Advanced Materials, EarlyView.
A Nb‐proximitized Josephson junction based on a WTe2/α‐Fe2O3 heterostructure exhibits a robust superconducting diode effect with programmable polarity. The diode direction can be trained by magnetic fields and switched by temperature cycling, revealing tunable finite‐momentum pairing states and competing superconducting states in symmetry‐broken ...
Enze Zhang, Grant Z. X. Yang, Zi‐Ting Sun, Xinhou Chen, Shishun Zhao, Chufan Chen, Chenhui Zhang, Fanrui Hu, K. T. Law, Hyunsoo Yang   +9 more
wiley   +1 more source

Neuromorphic Electronics for Intelligence Everywhere: Emerging Devices, Flexible Platforms, and Scalable System Architectures

Advanced Materials, EarlyView.
The perspective presents an integrated view of neuromorphic technologies, from device physics to real‐time applicability, while highlighting the necessity of full‐stack co‐optimization. By outlining practical hardware‐level strategies to exploit device behavior and mitigate non‐idealities, it shows pathways for building efficient, scalable, and ...
Kapil Bhardwaj, Roshni Satheesh Babu, Yuxin Xia, Eva Bestelink, Radu Sporea, Nikos Hastas, Ioannis Zeimpekis, Dimitra G. Georgiadou, Sayani Majumdar   +8 more
wiley   +1 more source