Results 91 to 100 of about 37,616 (317)

Oxygen‐Tunnel Indium Tin Oxide Vertical Channel Transistors with Enhanced Current Density and Reliability for Monolithic 3D Compute‐In‐Memory Systems

Advanced Functional Materials, EarlyView.
Oxygen‐tunnel (OT) indium tin oxide (ITO) vertical channel transistors (VCTs) enable reliable, high‐density gain‐cell memory for monolithic 3D integration. A sandwiched SiN/SiO2/SiN OT stack selectively regulates oxygen transport, suppressing parasitic electrode oxidation while stabilizing channel oxygen vacancies, thereby suppressing carrier injection
Hyeonho Gu, Haksoon Jung, Yongwoo Lee, Hoichang Jeong, Yanfeng Zhao, Heesoo Yang, Minho Park, Hyeonjin Lee, Seunghun Baek, Minju Song, Junghwan Kim, Youngmin Jo, Hyunjin Park, Munhyeon Kim, Jae‐Joon Kim, Kyuho Jason Lee, Byungjo Kim, Jimin Kwon   +17 more
wiley   +1 more source

Dielectric and Structural Properties of SrTiO₃ Thin Films Grown by Laser Molecular Beam Epitaxy

四川大学学报. 自然科学版, 2005
Here I will review recent progress on the study of dielectric SrTiO3 （STO） thin films. In our work, laser molecular beam epitaxy has been used to prepare multilayer heterostructures consisting of dielectric STO and high temperature superconducting ...
HAO Jian-hua (Department of Physics, The University of Hong KongPokfulam Road, Hong Kong, China)   +3 more
doaj  

Spin Injection Of Exciton–Polaritons With Halide Perovskites At Room Temperature

Advanced Functional Materials, EarlyView.
A monolithic Tamm‐plasmon microcavity embedding a two‐dimensional halide perovskite enables room‐temperature spin injection of exciton‐polaritons under quasi‐resonant optical excitation. Polarization‐resolved spectroscopy reveals partial preservation of the injected spin in the lower polariton branch, while bare excitons remain fully depolarized.
Elena Sendarrubias Arias‐Camisón, Maksim Lednev, Jorge Cuadra, Raúl Gago, Luis Viña, Francisco José García Vidal, Johannes Feist, Ferry Prins, Carlos Antón Solanas   +8 more
wiley   +1 more source

Fully Additive Vertical Organic Electrochemical Transistors on Renewable and Compostable Substrates Enable Ultrasensitive Bioelectronics

Advanced Functional Materials, EarlyView.
Fully additive vertical organic electrochemical transistors (vOECTs) with channel‐length of 226 nm on a 50 µm compostable substrate achieve >106 current modulation and ∼36 mS transconductance. Ion‐selective integration enables 1.1 mA dec−1 sensitivity and 36 µm detection limit, highlighting a scalable platform for sustainable electronics and ...
Giulia Frusconi, Samuele Lavelli, Zsolt M. Kovács‐Vajna, Fabrizio Torricelli   +3 more
wiley   +1 more source

A study of some thin transition metal oxide films [PDF]

, 1989
This thesis was submitted for the degree of Doctor of Philosophy and awarded by Brunel University.This thesis analyses the effect of varying the compositions of co-evaporated V205/TeO2, W03/CeO2, SiO/TeO2 and W03/TeO2 amorphous thin films on their ...
Yagoubi, Benabdellah, Yagoubi, B
core  

Chemical State Detection and Charge Transfer in Complex Oxide Heterostructures via In Situ Auger Electron Spectroscopy

Advanced Functional Materials, EarlyView.
In situ Auger Electron Spectroscopy resolves oxidation states with high fidelity during the pulsed laser deposition of multivalent perovskite manganate and vanadate heterostructures. The chemical‐state signature is carried by the valence‐electron population of the transition‐metal cation, read out through the relative intensities of Auger fine ...
Harish Kumarasubramanian, Jayakanth Ravichandran   +1 more
wiley   +1 more source

Thin film resistive materials: past, present and future [PDF]

, 2015
This paper explores the key developments in thin film resistive materials for use in the fabrication of discrete precision resistors. Firstly an introduction to the preparation of thin films and their fundamental properties is given with respect to well ...
Zoppi, Guillaume, Birkett, Martin, Cherian Lukose, Cecil   +2 more
core   +1 more source

Dielectric Gate Applications of PMMA-TiO2 Hybrid Films in ZnO-Based Thin Film Transistors

International Journal of Electrochemical Science, 2015
In this paper we report a low temperature sol-gel deposition process of organic-inorganic PMMA-TiO2 hybrid films for applications to gate dielectric layers in field-effect (FE) thin film transistors (TFT), using sputtered n-type ZnO as semiconductor ...
C.G. Alvarado-Beltrán, J.L. Almaral-Sánchez, M.A. Quevedo-López, R. Ramirez-Bon   +3 more
doaj   +1 more source

Omnipolar Magnetic Field Detection by Superlattice‐Based Hall Sensor

Advanced Functional Materials, EarlyView.
Magnetic‐field‐induced electronic switching is demonstrated in unit‐cell‐engineered La0.7Sr0.3MnO3–BiFeO3 superlattices. Distinct substrate terminations modify magnetic and transport properties. Hall resistance measurements show omnipolar, hysteretic anomalous Hall switching above the Curie temperature, arising from Fe─Mn interfacial exchange, enabling
Mark Huijben, Nicolas Gauquelin, Arno Annys, Zhaoliang Liao, Jo Verbeeck, Guus Rijnders, Gertjan Koster   +6 more
wiley   +1 more source

Pyroelectricity in langmuir-blodgett films [PDF]

, 1987
The fabrication of pyroelectric devices using the Langmuir-Blodgett (LB) technique is described. Studies of a wide range of materials are reported; however, the thesis concentrates on electrical and structural investigations of two specific alternate ...
Jones, C.A, Jones, Carole A.
core