Results 111 to 120 of about 1,937,511 (302)
The physical properties of ZnO can be tuned efficiently and controllably by doping with the proper element. Doping of ZnO thin films with 3D transition metals that have unpaired electron spins (e.g., Fe, Co, Ni, etc.) is of particular interest as it may ...
Dencho Spassov +3 more
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Strontium titanate based films for tunable device applications [PDF]
, 2009 Doutoramento em Ciência e Engenharia de MateriaisO SrTiO3 (ST) cristaliza com a estrutura da perovesquite e apresenta propriedades de um paraeléctrico quântico; isto é, exibe um aumento continuo da permitividade dieléctrica com o decréscimo da ...
Okhay, Olena
core
Dielectric dynamics of epitaxial BiFeO3 thin films
AIP Advances, 2012 We report the detailed study on the low temperature dielectric dynamics of the epitaxial BiFeO3 thin films grown on Nb-doped SrTiO3 substrate. The results indicate that the contributions from the thin film dominate the dielectric response, although it ...
Peng Ren +6 more
doaj +1 more source
Unexpected Asymmetric Mn‐Sb Site Mixing and Reentrant Spin‐Glass State of MnSb2Te4
Advanced Functional Materials, EarlyView.MnSb2Te4 is an intrinsic magnetic topological insulator. Its properties are extraordinarily sensitive to tiny defects, making structural studies essential for understanding how magnetism and topology work together. This work shows that Mn can be unevenly distributed within the crystal and how that disorder is linked to a newly reported spin‐glass state
Gustavo Chavez Ponce de Leon +7 more
wiley +1 more source
Chemical bath deposition of thin TiO2-anatase films for dielectric applications
, 2008 Titania thin films were prepared on bare Si and Pt/Ti/SiO2/Si substrates by chemical bath deposition (CBD) from solutions of a titanium peroxo complex and subsequent calcinations at 350 and 700 degrees C, respectively.
Hoffmann, R. +11 more
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Advanced Functional Materials, EarlyView.Combining field‐effect surface passivation of a narrow‐bandgap tin–lead perovskite by diammonium ions with introducing oleyl‐based amphiphiles to create insulating interface layers between the absorber and the adjacent hole and electron transporting layers increases the open‐circuit voltage to 91.5% of the detailed‐balance limit and enhances the power ...
Vishnu Vijayakumar +18 more
wiley +1 more source
NanocompositesFluoropolymers, known for their high dielectric permittivity, are extensively studied for nanocomposite energy storage. However, nanoparticle incorporation introduces defects, making the fabrication of thin films able to withstand high electric fields ...
Davide Disnan +7 more
doaj +1 more source
GeS as an Emerging OTS Material: Atomic Structure and Modeling of ON/OFF Switching
Advanced Functional Materials, EarlyView.The structural puzzle of glassy GeS, an advanced memory‐selector material, has finally been disentangled, revealing a patchwork of mixed tetrahedral and trigonal species. Under a high electric field, over‐ and under‐coordinated Ge and S defects, together with three‐membered rings, form an interconnected network associated with localized and extended ...
Andrey Tverjanovich +13 more
wiley +1 more source
High dielectric thin films based on barium titanate and cellulose nanofibrils. [PDF]
RSC Adv, 2020 Tao J, Cao SA, Feng R, Deng Y.
europepmc +1 more source
Effect of SiO2 Layer Thickness on SiO2/Si3N4 Multilayered Thin Films
Silicon nitride (Si3N4) materials are widely used in the electronics, optoelectronics, and semiconductor industries, with Si3N4 thin films exhibiting high densities, high dielectric constants, good insulation performance, and good thermal and chemical ...
Minghan Li +4 more
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