Results 261 to 270 of about 37,616 (317)

A thin film dielectric bolometer

Thin Solid Films, 1972
Abstract The impedance of thin film capacitors formed by vacuum evaporation of certain oxide dielectric materials has been found to be very temperature sensitive. Temperature coefficients of capacitance as high as 0.01 °C −1 are reported. One application for these capacitors is the detection of infrared radiation, and the development of a thin film ...
M.C. Lancaster, R.J. Mytton
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Functional behaviour of thin film dielectric superlattices

British Ceramic Transactions, 2001
AbstractPulsed laser deposition has been used to fabricate thin-film capacitor structures in which the dielectric layer is a superlattice. The properties of two superlattice systems were investigated as a function of superlattice wavelength (δ) – one based on barium strontium titanate and the other on lead-based relaxor electroceramics. In both systems
J. M. Gregg, M. H. Corbett, D. O'Neill, G. Catalan, R. M. Bowman   +4 more
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Surface Segregation Mechanisms in Dielectric Thin Films

Integrated Ferroelectrics, 2004
It is often assumed that evaporation causes lead and bismuth depletion at the surface of ferroelectric films. However, this is in contrast with evidence that shows surface enrichment of Pb and Bi. A segregation mechanism that is analogous to the diffusion processes observed during the oxidation of metals is described. The presence of an electrochemical
Watts B.E. a, Leccabue F. a, Tallarida G. b, Ferrari S. b, Fanciulli M. b, Padeletti G. c   +5 more
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Stress in thin dielectric films

Microelectronics Reliability, 1963
Abstract The paper gives a brief review of work on mechanical stress in evaporated dielectric films. The various methods used for measuring stress are considered and the application of the methods to various dielectrics is discussed. Zinc sulphide, silicon monoxide and lithium fluoride are considered in some detail, and results on other dielectrics ...
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Using Ferroelectric Thin Film as the Dielectric for Electrowetting-on-Dielectric

Key Engineering Materials, 2016
In this paper, the dielectric and electrowetting properties of Pb (Zr0.4Ti0.6)O3 (PZT) ferroelectric thin film are studied as the dielectric layer in electrowetting-on-dielectric (EWOD) device. The PZT thin film is formed by spin-coating, pyrolysis and annealing.
Jia Qi Niu, Zhen Kun Xie, Zhen Xing Yue, Wei Qiang Wang   +3 more
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Thin film dielectrics—The future

Thin Solid Films, 1983
Abstract Recent advances in our understanding of the dielectric behaviour of solids have indicated that cooperative behaviour dominates the spectral response that is observed. A brief description of the cooperative approach is given, and the particular role that the investigation of thin film structures can play is outlined.
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Synthesis, characterization and dielectric properties of SnO2 thin films

Spectrochimica Acta Part A: Molecular and Biomolecular Spectroscopy, 2014
SnO2 thin films have been grown on glass substrates using Successive Ionic Layer Adsorption and Reaction (SILAR) method at room temperature and ambient pressure. The annealing temperature effect on the structural, morphological, optical and electrical properties of SnO2 thin films has been investigated. The X-ray Diffraction (XRD) and Scanning Electron
Yıldırım, Memet Ali, Tuna Yıldırım, Sümeyra, Saka, Emine Fedakar, Ateş, Aytunç   +3 more
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Conduction in thin dielectric films

Journal of Physics D: Applied Physics, 1971
Conduction through thin dielectric films sandwiched between metal and semiconductor electrodes is reviewed.
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Dynamics in thin polymer films by dielectric spectroscopy

The European Physical Journal E, 2003
After a brief review on the recent developments of the dielectric studies in thin polymer films, our recent results on dynamics in thin films of poly(methyl methacrylate) (PMMA) and polyisoprene (PIP) are shown. For PMMA, the tacticity effect on dynamics in thin films has been investigated and the disappearance of this effect was found below a critical
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Dielectric properties of thin polyimide films

CAS 2010 Proceedings (International Semiconductor Conference), 2010
Heterocyclic polyimides based on bis (ketonaphthalic) dianhydrides and aromatic diamines containing oxadiazole rings were prepared and their dielectric properties were investigated. The dielectric constant values, measured at room temperature and in the frequency domain of 1 Hz-1MHz, were in the range of 2.7–3.1, being lower or comparable with those of
Radu-Dan Rusu, Mariana-Dana Damaceanu, Maria Bruma, Alexandru Müller   +3 more
openaire   +1 more source