Results 21 to 30 of about 1,937,511 (302)

Conduction mechanisms in thin (0.6)BiFeO3-(0.4)PbTiO3 films

open access: yesJournal of Materials Research and Technology, 2022
Leakage current is one of the major drawbacks for a proper electrical and dielectric characterization limiting applications of ferroelectric materials, especially considering thin films. In this sense, understanding the leakage current mechanisms in such
E.A.C. Astrath   +12 more
doaj   +1 more source

Electroprinting of MWCNT-assisted PVDF thin films with enhanced electrical properties

open access: yesApplied Surface Science Advances, 2021
Polyvinylidene fluoride(PVDF) thin film with good electrical properties is usually used as a piezoelectric sensor or energy harvesting device. It has a broad potential application prospect in the fields of damage detection, structural vibration, medical ...
Jiaguang Zhu   +2 more
doaj   +1 more source

Optical Properties and Stability of Copper Thin Films for Transparent Thermal Heat Reflectors

open access: yesMetals, 2022
The use of thin metallic layers at the thickness limit where transparency or spectral selectivity are achieved is gaining increased interest. The use of cheap and abundant materials is desirable in the attempt to avoid environment or economical costs ...
Iulian Pana   +5 more
doaj   +1 more source

Epitaxial Stabilization of Perovskite ATeO3 Thin Films

open access: yes, 2023
Tellurium oxides of the ATeO3 form typically do not crystallize in perovskite structures. Here, we show that perovskite-like ATeO3 (A = Ca, Sr, Ba) thin films can be grown on perovskite single-crystal substrates via epitaxial stabilization.
Kristin Tippey   +7 more
core   +1 more source

Measurement and ab initio Investigation of Structural, Electronic, Optical, and Mechanical Properties of Sputtered Aluminum Nitride Thin Films

open access: yesFrontiers in Physics, 2020
We report our results on highly textured aluminum nitride (AlN) thin films deposited on glass substrates, oriented along the c-axis, using DC-magnetron sputtering technique for different values of back pressure.
A. M. Alsaad   +8 more
doaj   +1 more source

Application of Amorphous Zirconium-Yttrium-Aluminum-Magnesium-Oxide Thin Film with a High Relative Dielectric Constant Prepared by Spin-Coating

open access: yesMembranes, 2021
Amorphous metal oxide has been a popular choice for thin film material in recent years due to its high uniformity. The dielectric layer is one of the core materials of the thin film transistor (TFT), and it affects the ability of charges storage in TFT ...
Huiyun Yang   +9 more
doaj   +1 more source

Dielectric properties of plasma polymerized poly(ethylene oxide) thin films

open access: yes, 2021
Plasma polymerized poly(ethylene oxide) (pPEO) thin films were deposited by plasma assisted physical vapor deposition (PAPVD) with a constant thickness of 500 nm.
Deger, Deniz   +5 more
core   +1 more source

Dielectric properties of amorphous Bi–Ti–O thin films

open access: yesJournal of Advanced Dielectrics, 2021
We report the unexpectedly excellent dielectric properties of amorphous thin films with compositions in the Bi–Ti–O system. Films were deposited by RF magnetron reactive co-sputtering.
R. Sun, W. Xu, R. B. van Dover
doaj   +1 more source

Metal-to-Dielectric transition induced by annealing of oriented titanium thin films [PDF]

open access: yes, 2013
Titanium thin films were deposited by DC magnetron sputtering. The glancing angle deposition (GLAD) method was implemented to prepare two series of titanium films: perpendicular and oriented columnar structures.
CARPENTIER, Luc   +5 more
core   +1 more source

Simultaneous normal – Anomalous dielectric dispersion and room temperature ferroelectricity in CBD perovskite BaTiO3 thin films

open access: yesJournal of Materials Research and Technology, 2020
Chemical bath deposition (CBD) method, being an electroless technique, is used to prepare phase pure barium titanate (BaTiO3) thin films using glass as substrate. Molarity of the solution is varied from 0.1 to 1.2 M, whereas, solution temperature is kept
Sidra Khan   +5 more
doaj   +1 more source

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