Results 31 to 40 of about 37,616 (317)

SmScO 3 thin films as an alternative gate dielectric [PDF]

open access: yesApplied Physics Letters, 2008
Samarium scandate thin films deposited on (100) Si have been investigated structurally and electrically. Rutherford backscattering spectrometry and transmission electron microscopy results show that the films are stoichiometric, amorphous, and smooth. X-ray diffraction analysis indicates that SmScO3 starts to crystallize at 900 °C.
Durgun Özben, E.   +8 more
openaire   +2 more sources

Metal-to-Dielectric transition induced by annealing of oriented titanium thin films [PDF]

open access: yes, 2013
Titanium thin films were deposited by DC magnetron sputtering. The glancing angle deposition (GLAD) method was implemented to prepare two series of titanium films: perpendicular and oriented columnar structures.
CARPENTIER, Luc   +5 more
core   +1 more source

Dielectric resonator in rectangular ??(102) cavity for electron paramagnetic resonance study of thin films [PDF]

open access: yes, 2023
The improved compared to a rectangular TE(102 )cavity geometry of a dielectric resonator (DR) suitable for studying thin films and coatings has been calculated and experimentally verified.
Solopan, S. O.,   +15 more
core   +1 more source

Measurement and ab initio Investigation of Structural, Electronic, Optical, and Mechanical Properties of Sputtered Aluminum Nitride Thin Films

open access: yesFrontiers in Physics, 2020
We report our results on highly textured aluminum nitride (AlN) thin films deposited on glass substrates, oriented along the c-axis, using DC-magnetron sputtering technique for different values of back pressure.
A. M. Alsaad   +8 more
doaj   +1 more source

Application of Amorphous Zirconium-Yttrium-Aluminum-Magnesium-Oxide Thin Film with a High Relative Dielectric Constant Prepared by Spin-Coating

open access: yesMembranes, 2021
Amorphous metal oxide has been a popular choice for thin film material in recent years due to its high uniformity. The dielectric layer is one of the core materials of the thin film transistor (TFT), and it affects the ability of charges storage in TFT ...
Huiyun Yang   +9 more
doaj   +1 more source

Dielectric properties of amorphous Bi–Ti–O thin films

open access: yesJournal of Advanced Dielectrics, 2021
We report the unexpectedly excellent dielectric properties of amorphous thin films with compositions in the Bi–Ti–O system. Films were deposited by RF magnetron reactive co-sputtering.
R. Sun, W. Xu, R. B. van Dover
doaj   +1 more source

Measurement of Thermo-Optic Properties of Thin Film Dielectric Coatings [PDF]

open access: yes, 2013
We have carried out an experiment to test the theory of the thermo-optic response of a dielectric stack mirror coating and to measure parameters of interest in calculating thermo-optic noise. Specifically, we measured the coefficient of thermal expansion
Ogin, Gregory H.
core   +1 more source

Ferroelectric and dielectric properties of sol–gel derived BaxSr1−xTiO3 thin films [PDF]

open access: yes, 2003
Ferroelectric thin films of Ba0.7Sr0.3TiO3, Ba0.8Sr0.2TiO3, Ba0.9Sr0.1TiO3 and BaTiO3 were fabricated by a modified sol–gel technique on Pt/Ti/SiO2/Si substrates.
Adikary, SU, Chan, HLW
core   +1 more source

Structure and dielectric properties of highly (100)-oriented PST thin films deposited on MgO substrates [PDF]

open access: yes, 2008
High-quality Pb0.4Sr0.6TiO3 (PST) thin films have been epitaxially grown on MgO (100) substrates at various substrate temperatures by the pulsed laser deposition (PLD) technique.
Du, PY   +9 more
core   +1 more source

Simultaneous normal – Anomalous dielectric dispersion and room temperature ferroelectricity in CBD perovskite BaTiO3 thin films

open access: yesJournal of Materials Research and Technology, 2020
Chemical bath deposition (CBD) method, being an electroless technique, is used to prepare phase pure barium titanate (BaTiO3) thin films using glass as substrate. Molarity of the solution is varied from 0.1 to 1.2 M, whereas, solution temperature is kept
Sidra Khan   +5 more
doaj   +1 more source

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