Results 101 to 110 of about 38,108 (301)

Atomic‐Scale Study of Dead Layers in Epitaxial Perovskite Dielectric Thin Films with Oxide and Metal Top Electrodes

open access: yesAdvanced Electronic Materials
Perovskite‐oxide‐based capacitors, which exhibit high charge storage capacity, have attracted considerable attention as a potential candidate for overcoming the limitations of nanoscale integration.
Jeongil Bang   +9 more
doaj   +1 more source

Chemical State Detection and Charge Transfer in Complex Oxide Heterostructures via In Situ Auger Electron Spectroscopy

open access: yesAdvanced Functional Materials, EarlyView.
In situ Auger Electron Spectroscopy resolves oxidation states with high fidelity during the pulsed laser deposition of multivalent perovskite manganate and vanadate heterostructures. The chemical‐state signature is carried by the valence‐electron population of the transition‐metal cation, read out through the relative intensities of Auger fine ...
Harish Kumarasubramanian   +1 more
wiley   +1 more source

Space charge measurement and analysis in low density polyethylene films

open access: yes, 2009
The growing requirement of reliability for an insulation system gives researchers greater responsibility to investigate new techniques for monitoring and diagnosing dielectrics subjected to an electric field.
Xu, Zhiqiang
core   +1 more source

Omnipolar Magnetic Field Detection by Superlattice‐Based Hall Sensor

open access: yesAdvanced Functional Materials, EarlyView.
Magnetic‐field‐induced electronic switching is demonstrated in unit‐cell‐engineered La0.7Sr0.3MnO3–BiFeO3 superlattices. Distinct substrate terminations modify magnetic and transport properties. Hall resistance measurements show omnipolar, hysteretic anomalous Hall switching above the Curie temperature, arising from Fe─Mn interfacial exchange, enabling
Mark Huijben   +6 more
wiley   +1 more source

Electrocaloric Cooling Materials and Systems: A Review and Perspective

open access: yesZhileng xuebao, 2021
Electrocaloric cooling technology has advanced with the discovery of the giant electrocaloric effect, employing the entropy change during the poling and de-poling processes to enable operation of the refrigeration cycle.
Li Zichao   +3 more
doaj  

Spatially Modulated Morphotropic Phase Boundaries in a Compressively Strained Multiferroic Thin Film

open access: yesAdvanced Functional Materials, EarlyView.
ABSTRACT The coexisting rhombohedral‐like (R′, MA) and tetragonal‐like (T′, MC) monoclinic phases in compressively strained bismuth ferrite thin films exhibit exceptional piezoelectric and magnetic properties. While previous studies have largely focused on probing the morphotropic phase boundaries (MPBs) comprising ordered R′/T′ twins, their self ...
Ting‐Ran Liu   +7 more
wiley   +1 more source

The impact of dielectrics research on smart grid technologies

open access: yes, 2015
The Dielectrics and Electrical Insulation Society (DEIS) is concerned with the material properties and behavior of dielectrics, particularly as applied to electrical insulation systems.
Catterson, Victoria
core  

Space charge measurement as a diagnostic tool to monitor electrical ageing in polymeric materials

open access: yes, 2006
Space charge is a term used to describe the excessive charges in volume. Such excessive charges can be electrons, ions or mixture of both. In solid dielectrics space charge tends to build up at discontinuities, such as at the dielectric-electrode ...
Chen, G.
core   +1 more source

Achieving High ON State Current through Ferroelectric Polarization‐Dependent Interfacial Resistance Switching in Undoped Orthorhombic HfO2 Films

open access: yesAdvanced Functional Materials, EarlyView.
Ferroelectric tunnel junction devices based on epitaxial undoped ferroelectric HfO2 films demonstrate stable switching endurance of over 106 switching cycles, low write voltages of ±3 V, 16 measured resistance states, and neuromorphic capability.
Markus Hellenbrand   +13 more
wiley   +1 more source

Accurate modeling of gate capacitance in deep submicron MOSFETs with high-K gate-dielectrics

open access: yes, 2004
Gate capacitance of metal-oxide-semiconductor devices with ultra-thin high-K gate-dielectric materials is calculated taking into account the penetration of wave functions into the gate-dielectric.
Haque, A., Hakim, M.M.A.
core   +1 more source

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