Results 121 to 130 of about 10,624 (269)

Extraordinary n‐type Tellurium‐Free Thermoelectric Performance of Y‐Doped BiSe via Synergistic Effect of Vacancies and Band Engineering

Advanced Functional Materials, EarlyView.
Yttrium doping in Sb‐alloyed BiSe synergistically induces Bi vacancies and flattens conduction bands, simultaneously slashing lattice thermal conductivity by 50% and boosting the power factor. The optimized n‐type Bi0.64Sb0.3Y0.06Se delivers a peak zT of 0.91 at 393 K (average zT 0.76, 300–523 K) and an 8‐pair module with 4.6% conversion efficiency ...
Wenhao Xie, Fang Lyu, Xiaolong Sun, Chang Li, Xiaolu Zhu, Liangwei Hu, Qianfeng Ding, Wenjie Zhou, Muyang Huang, Yineng Gou, Yi Zhao, Han Tang, Wei Cao, Yue Hou, Yun Zheng, Ady Suwardi, Ziyu Wang   +16 more
wiley   +1 more source

Advances and Perspectives in Gate Dielectric Thin Films for 4H-SiC MOSFETs. [PDF]

Materials (Basel)
Bai Z, Liang J, Ding C, Zhou Z, Luo M, Gu L, Ma HP, Zhang QC.   +7 more
europepmc   +1 more source

Direct Channel Implantation of B and BF2 Ions for Functional Control of Oxygen Vacancies in Oxide Semiconductor Thin Film Transistors

Advanced Functional Materials, EarlyView.
Direct channel implantation of B and BF2 ions was employed to fabricate amorphous IGZO TFTs with improved electrical and stability properties. B and BF2 implantation modulate oxygen vacancies within the IGZO channel. The field‐effect mobility of ion‐implanted IGZO TFTs was enhanced as compared to pristine IGZO TFTs.
Beom Soo Kim, Jong Bin An, Seok Gyu Hong, Moon Ho Lee, Ju Hyun Lee, Ji Yeong Park, Hwa Seon Kim, I. Sak Lee, Kyungmoon Kwak, Hyun Jae Kim   +9 more
wiley   +1 more source

Ferroelectric-to-paraelectric phase engineering for 2D layered ultra-high-<i>κ</i> dielectrics. [PDF]

Natl Sci Rev
Yan J, Guo J, Xu Z, Wan T, Li J, Zhang B, Wang C, Chen H, Zhu Y, Chai Y.   +9 more
europepmc   +1 more source

Giant Electrostriction in Halide Perovskites Revisited With Double‐Modulation Interferometry

Advanced Functional Materials, EarlyView.
A giant electrostrictive effect in lead halide perovskites had been reported previously. This work uses sensitive interferometry to measure the electromechanical response of various halide perovskite samples. The results reveal no intrinsic electrostrictive compression. Instead, the materials expand primarily under an applied electric field as a result
Philipp Ramming, Markus Griesbach, Ralf Moos, Lothar Kador, Anna Köhler   +4 more
wiley   +1 more source

Supramolecular Engineering of a Homo[2]catenane Filler Enables Polymer Composites with Exceptional High-Temperature Capacitive Energy Storage. [PDF]

Molecules
Su Q, Sun Y, Li J, Ma B, Zhang X, Tian H, Ju Y, Gao S, Liu Z, Zhang T, Wu L.   +10 more
europepmc   +1 more source

Ambient‐Stable Transparent P‐Type CuI Transistors Via Room‐Temperature Pulsed Laser Deposition

Advanced Functional Materials, EarlyView.
An in situ PLD fabricated AlOx${\rm AlO}_x$/CuI/AlOx${\rm AlO}_x$ sandwich structure enables stable CuI TFTs with a field‐effect mobility of 2.3 ±$\pm$ 0.7 cm2${\rm cm}^{2}$ V−1${\rm V}^{-1}$ s−1${\rm s}^{-1}$ and excellent ambient stability. Complementary inverters based on CuI:Rb and ZnO:Al exhibit rail‐to‐rail voltage transfer characteristics and an
Yang Chen, Susanne Selle, Michael S. Bar, Michael Lorenz, Holger von Wenckstern, Marius Grundmann   +5 more
wiley   +1 more source

High-κ KBe₂BO₃F₂ dielectric material with wide bandgap for two-dimensional electronics. [PDF]

Nat Commun
Xu Y, Liu K, Peng G, Liu T, Sun L, Xiong X, Wu Y, Sun H, Bai X, Zhu Y, Xiao Z, Li H, Zhai T.   +12 more
europepmc   +1 more source

Semiconducting Polymers Post‐Functionalized With Ureido‐Pyrimidinone for Robust Stretchable Transistors

Advanced Functional Materials, EarlyView.
The design of intrinsically robust stretchable semiconducting polymers was achieved through OTBS‐mediated post‐functionalization of PDPP2T side chains with UPy units, generating dual hydrogen‐bonding motifs comprising weaker urethane linkages and strong quadruple UPy interactions along the long alkyl side chain, which is crucial for achieving desirable
Dinda Bazliah, Livy Laysandra, Kosuke Terayama, Xingyu Yang, Atsushi Isobe, Tai‐Chin Chiang, Tsuyoshi Michinobu, Yu‐Cheng Chiu   +7 more
wiley   +1 more source

Potential well engineering for self-adaptive dielectric response polymer dielectrics. [PDF]

Nat Commun
Zhang D, Wang Q, Xie C, Zhong A, Bi C, Han Y, Wang R.   +6 more
europepmc   +1 more source