Results 111 to 120 of about 10,584 (269)

Exciton Binding Energy of Phosphorescent Emitter Molecules in Organic Light‐Emitting Diodes

open access: yesAdvanced Functional Materials, EarlyView.
Energy level alignment is key to efficient OLED design, yet determining LUMO energies remains challenging. A methodology based on field‐induced dissociation and kinetic Monte Carlo simulations is presented to extract LUMO energies of iridium‐based phosphorescent emitters from their exciton binding energy.
Hiroki Tomita   +6 more
wiley   +1 more source

Graded‐Interface Dual‐Environment Hydrogel‐Polymer Electrolyte for Stabilized Anode and Sustained Cathode Kinetics in Aqueous Zinc‐Ion Batteries

open access: yesAdvanced Functional Materials, EarlyView.
A graded‐interface hydrogel‐polymer electrolyte decouples water activity to simultaneously stabilize the Zn anode and sustain cathode kinetics. The flexible design supports dendrite‐free cycling over 1600 h, high capacity in both MnO2 and V2O5 full cells, and stable pouch‐cell performance under bending, resolving the fundamental water conflict in ...
Shuyun Wang   +8 more
wiley   +1 more source

Octahedral-rigidity-engineered linear dielectrics for harsh-temperature energy storage capacitors. [PDF]

open access: yesNat Commun
Wang Q   +13 more
europepmc   +1 more source

A Bilayered Inorganic‐Metal Interface Enables Highly Reversible Aluminum Deposition for Long‐Life Aqueous Batteries

open access: yesAdvanced Functional Materials, EarlyView.
A gradient M/MOx (M = Sn, Cu, Cd) synergistic interphase was constructed on Al via a one‐step displacement reaction. This interphase leverages high aluminophilicity and ion‐buffering capability to accelerate desolvation, enhance Al3+ transport, and suppress side reactions, enabling ultrastable symmetric cell operation at 0.05 mA cm−2 for 1800 h with an
Shuang Cheng   +7 more
wiley   +1 more source

Gate dielectric stack design for 2D materials-based electronics. [PDF]

open access: yesNano Converg
Jin M   +18 more
europepmc   +1 more source

Unraveling the Electronic Structure of Silicon Vacancy Centers in 4H‐SiC

open access: yesAdvanced Functional Materials, EarlyView.
The electronic structure of the silicon vacancy in 4H‐SiC is probed via transient absorption spectroscopy, uncovering previously inaccessible excited states of the quartet and doublet spin channels, including the V2' transition. In combination with theoretical analysis, a comprehensive picture of the electronic structure is established.
Ali Tayefeh Younesi   +9 more
wiley   +1 more source

Dielectric and Gate Metal Engineering for Threshold Voltage Modulation in Enhancement Mode Monolayer MoS<sub>2</sub> Field Effect Transistors. [PDF]

open access: yesAdv Mater
Liu L   +10 more
europepmc   +1 more source

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