Results 151 to 160 of about 1,067,462 (345)
Advanced Electronic Materials, EarlyView.The low‐frequency noise in organic bilayer ambipolar transistors is investigated, revealing a unique 1/f⁴ noise from correlated trapping/detrapping and generation/recombination processes. Inserting a thin parylene layer between the n/p junction effectively reduces this excess noise, suggesting a practical approach to enhanced device reliability in ...
Youngmin Han +4 more
wiley +1 more source
Shor's discrete logarithm quantum algorithm for elliptic curves
, 2003 John Proos, Christof Zalka
openalex +2 more sources
Synaptic Function in Memristor Devices for Neuromorphic Circuit Applications
Advanced Electronic Materials, EarlyView.Discover how neuromorphic devices mimic brain‐like learning: this article explores how ionic and electronic conduction processes enable artificial synapses to adapt across time scales. Uncover the essential ingredients—state‐variable dynamics, rectification, and memory—and how they can be probed through nonlinear diagnostics to engineer smarter, more ...
Juan Bisquert +3 more
wiley +1 more source
Batch Verification for Equality of Discrete Logarithms and Threshold Decryptions
, 2004 Riza Aditya +4 more
openalex +1 more source
Resistance Drift of Phase Change Materials Beyond the Power Law
Advanced Electronic Materials, EarlyView.The timedependent resistance of phase change materials is important for their application as electronic memory. Here, resistance measurements of melt‐quenched germanium telluride from nanoseconds to minutes are presented. By going far beyond the usually considered measurement regime, deviations from the ubiquitous power law behavior are observed, that ...
Jakob Ballmaier +2 more
wiley +1 more source
Blind Signature Schemes Based on the Elliptic Curve Discrete Logarithm Problem [PDF]
, 2010 Constantin Popescu
openalex +1 more source
Defect Density of States of Tin Oxide and Copper Oxide p‐type Thin‐film Transistors
Advanced Electronic Materials, EarlyView.The complete band‐to‐band defect density of states driving p‐mode operation in tin and copper oxide transistors is obtained through photoconduction microscopy over a 0.15 to 3.5 eV tunable laser range. These analytical maps of subgap defect density with the extracted TFT bandgaps, show how ideal p‐mode operation may be achieved in metal oxide thin‐film
Måns J. Mattsson +6 more
wiley +1 more source
Distribution of the Error in Estimated Numbers of Fixed Points of the Discrete Logarithm
, 2004 Joshua Holden
openalex +2 more sources
On the discrete logarithm problem for prime-field elliptic curves
IACR Cryptology ePrint Archive, 2018 Alessandro Amadori +2 more
semanticscholar +1 more source
Materials Selection Principles for Designing Electro‐Thermal Neurons
Advanced Electronic Materials, EarlyView.Materials property – performance relations are established for new and old electrical materials leveraged as electro‐thermal oscillators emulating neuron dynamics. Robust, reconfigurable, high frequency, low power characteristics are explicitly tied to highly nonlinear electrical transport, small specific heat, and greater electrical than thermal ...
Fatme Jardali +6 more
wiley +1 more source