Results 111 to 120 of about 55,611 (129)
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A simple charge-based DLTS technique
Physica Status Solidi (a), 1981A charge-based DLTS technique is proposed for characterizing the interface states and, with some restrictions, the bulk traps in MIS, p–n, and Schottky-barrier diodes. The technique uses very simple devices — a mechanical chopper and a standard electrometer, but inspite of this a high sensitivity of the order of 108 eV−1 cm−2 can be reached when ...
Krassimir B. Radev, K. I. Kirov
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Solid State Communications, 1981
Abstract It is shown theoretically that correlation methods of deep level transient spectroscopy give results sensitive to thermal capture effects. In thermal emission studies, the apparent trap depth depends on the free-carrier concentration.
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Abstract It is shown theoretically that correlation methods of deep level transient spectroscopy give results sensitive to thermal capture effects. In thermal emission studies, the apparent trap depth depends on the free-carrier concentration.
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Application of DLTS and Laplace-DLTS to defect characterization in high-resistivity semiconductors
Physica B: Condensed Matter, 2007This paper shows that the use of conventional analytical procedures to determine defect parameters from DLTS spectra may lead to erroneous results for high-resistivity semiconductors. The effect is observed when the temperature range of a DLTS peak encompasses the temperature at which the equilibrium Fermi level intersects the energy level of defect ...
Leonid Makarenko, J. Evans-Freeman
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DLTS of nickel impurities in germanium
Solid State Communications, 1992Abstract The defect parameters of substitutional nickel in germanium have been investigated with DLTS. Nickel, when diffused into germanium, introduces two acceptor levels in the band gap, in agreement with earlier Hall effect measurements: E v +0.217 eV and E c -0.299 eV. Another level, at E v +0.414 eV, is probably also nickel related.
Joost Vennik +3 more
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A DLTS study of InAs mis structures
Applied Surface Science, 1989Deep level transient spectroscopy (DLTS), capacitance–voltage (C–U) measurement, and thermally stimulated polarization current (TSPC) methods are used to study InAs MIS-structures in the temperature region from 5 to 400K. It is found that above 200K the measured DLTS signal is caused by charge accumulation in the insulator layer.
V. N. Vertoprakhov +2 more
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Behaviour of an amphoteric defect under standard DLTS and beam injection DLTS, respectively
Materials Science and Engineering: B, 1996Abstract The temperature dependence of one of the prominent DLTS lines of plastically deformed n-type silicon indicates trapping of both electrons and holes. An algorithm for analysis of such cases is proposed which does not require exponential transients.
K. Knobloch, H. Alexander
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Multi-exponential analysis of DLTS
Applied Physics A Solids and Surfaces, 1986Deep-level transient spectroscopy (DLTS), which is widely used to characterize deep impurity centers in semiconductors, assumes a single exponential wave form for the transient junction capacitance. When there are several closely spaced energy levels this assumption is no more valid, and the conventional DLTS may lead to errorneous results. To overcome
T. Miyakawa +3 more
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E3.1 Assessment of DLT Frameworks
2023This document corresponds to the deliverable E3.1 Assessment of DLT Frameworks, envisaged in the framework of the project 6GENABLERS-DLT (TSI-063000-2021-12). Starting the technical work of P3, this deliverable provides a comprehensive design of the implementation of the Distributed Ledger Technology (DLT) system building the distributed marketplace of
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On the DLTS‐characterization of dislocation states in silicon
Kristall und Technik, 1981AbstractElectron traps revealing nonexponential kinetics of electron capturing were detected in DLTS spectra of dislocated silicon. Their apparent capture cross‐sections are dependent on temperature and on the filling state of the trap system. A model of deformationinduced damage in silicon is proposed.
O. Breitenstein +2 more
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Computerized digitizing technique for DLTS measurements
IEEE Transactions on Instrumentation and Measurement, 1994An enhanced version of an algorithm developed by Maguire and Marshall in their computerized DLTS system is presented. Improvements consist of introducing analysis of partial processing of digitized transients by deleting the initial part, which usually includes the loading transient caused by the measurement circuit RC constant.
A. Avila-Garcia, A.R. Barranca
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