Results 111 to 120 of about 49,137 (305)
This review establishes structure‐property‐mechanism relationships across six modification strategies for V‐based oxide water‐splitting electrocatalysts: lattice engineering, heteroatom doping, interface engineering, carbon‐based hybridization, morphology engineering, and surface reconstruction and pre‐catalyst design, where dissolution is reframed as ...
Youness El Issmaeli +4 more
wiley +1 more source
Ground‐State Charge‐Transfer Doping in Donor–Acceptor Semiconducting Polymers
This work demonstrates controlled ground‐state charge‐transfer complex formation (GS‐CTC) and doping in a series of diketopyrrolopyrrole‐based donor–acceptor semiconducting polymers paired with a π‐conjugated penta‐t‐butylpentacyanopentabenzo[25]annulene “cyanostar” macrocycle. Complementary experimental techniques show how subtle molecular, electronic,
Tanner L. Smith +13 more
wiley +1 more source
Top‐down ultrasonication produces highly emissive Cs2ZrCl6:Te4+ nanocrystals (NCs) with a PLQY of 65%, which is higher compared to that of the NCs synthesized by typical bottom‐up hot‐injection synthesis. The colloidal Cs2ZrCl6:Te4+ NCs have been found to be potential candidates for x‐ray scintillation imaging.
Yang Liu +12 more
wiley +1 more source
Individuality of Dopants in Silicon Nano-pn Junctions
The reduced dimensionality of present electronic devices brings along changes in the dopant distribution in the device channel, in which only a small number of dopants exist.
Takeshi MIZUNO +7 more
core +1 more source
Covalent Functionalization of 2D Semiconductors: A Roadmap to Advanced Electronic Devices
This Review presents recent advances in the covalent functionalization strategies for two‐dimensional semiconductors and their implementation in modern technologies. Layered materials are modified through diverse molecular chemistries (e.g., thiols, diazonium salts, alkyl halides, and electron‐deficient species) to tailor their surface properties ...
Ramiro Quirós‐Ovies +2 more
wiley +1 more source
Redistribution of Implanted Dopants in GaN [PDF]
Donor (S, Se and Te) and acceptor (Mg, Be and C) dopants have been implanted into GaN at doses of 3-5x1014 cm-2 and annealed at temperatures up to 1450 *C.
Rieger, D. J. +11 more
core
A triplet‐blocking layer controls triplet exciton dynamics in blue upconversion OLEDs. The layer keeps charge transfer (CT)‐generated triplet excitons inside the triplet‐triplet annihilation (TTA) host, suppresses anode‐side interfacial quenching, and increases the steady‐state triplet population.
Qing‐Jun Shui +5 more
wiley +1 more source
Mapping of dopants by electron injection
Dopants in silicon structures locally modify the secondary electron emission, revealing in this way their distribution over the sample. Primary electron beam with energy around 1 keV is usually used for probing the doped structures.
Hovorka, Miloš
core
Eu‐doped {ZnCdO/ZnO} structures grown on Si are developed, showcasing dual‐functionality controlled by europium doping. While high europium concentration transforms the device into an ultrafast, self‐powered photodetector, low‐doped structures can be used as an optoelectronic synapse.
Igor Perlikowski +3 more
wiley +1 more source
Data-driven graph neural networks guide codoping for stable Ni-rich layered cathodes
Ni-rich layered oxide cathode materials have emerged as promising candidates for next-generation mainstream high-energy nonaqueous lithium-based batteries because of their inherent advantages in terms of specific capacity.
Mengyu Tian +3 more
doaj +1 more source

