Results 211 to 220 of about 20,036 (269)

Retarded dopant diffusion by moderated dopant–dopant interactions in Si nanowires

Physical Chemistry Chemical Physics, 2015
The mechanical softening and quantum confinement found in nanostructures are the physical origin of the suppressed dopant diffusion.
Jongseob, Kim, Ki-Ha, Hong
openaire   +2 more sources

Dopants in HgCdTe

MRS Proceedings, 1997
AbstractIn this paper we discuss our ab initio calculations of native point defect and impurity densities in HgCdTe. Our calculations have explained the experimental finding in general, and in particular have explained the in-active incorporation of the group VII elements under mercury-deficient conditions; have shown that the group I elements have a ...
M. A. Berding, A. Sher
openaire   +1 more source

Single dopants in semiconductors

Nature Materials, 2011
The sensitive dependence of a semiconductor's electronic, optical and magnetic properties on dopants has provided an extensive range of tunable phenomena to explore and apply to devices. Recently it has become possible to move past the tunable properties of an ensemble of dopants to identify the effects of a solitary dopant on commercial device ...
Koenraad, P.M., Flatté, M.E.
openaire   +2 more sources

The Site of In Dopants in Si

AIP Conference Proceedings, 2007
The electrical properties of dopants in Si are of primary importance for the realization of electronic devices. Indium represents a promising p-type dopant whose electrical properties are improved by co-doping with C. From theoretical studies In and C are expected to pair in the Si matrix in order to lower the strain energy.
Fd'Acapito, BGolosio, Y Shimizu, SScalese, MItalia, P Alippi, SGrasso   +6 more
openaire   +2 more sources

Dopants

2014
The applicability of XAFS to the structural study of dilute atoms is one of its main characteristics. It has been used extensively to study dopants in semiconductors, providing in many cases a structural basis for the understanding of physical properties.
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Making weak dopants strong

Nature Materials, 2019
Lewis acids are shown to react with water, forming a complex with Bronsted acidity able to effectively dope semiconducting polymers through backbone protonation and internal charge transfer.
Han Yan, Wei Ma
openaire   +2 more sources

Molecular Dopants and High Mass Dopants for HALO and Extension Implantation

2007 International Workshop on Junction Technology, 2007
Diffusion-less activation were realized for the 650degC SPE, >1300degC flash and 900degC spike anneals. For pSDE all boron dopant species (BF2, B10H14 and B18H22) achieved high quality junctions with flash annealing. With 900degC spike either B10H14 or B18H22 can be used while with 650degC SPE annealing only B18H22 can be used.
Akira Mineji, John Borland, Seiichi Shishiguchi, Masami Hane, Masayasu Tanjyo, Tsutomu Nagayama   +5 more
openaire   +1 more source

Influence of dopants on the impermeability of graphene

Nanoscale, 2017
Graphene has attracted much attention as an impermeable membrane and a protective coating against oxidation. While many theoretical studies have shown that defect-free graphene is impermeable, in reality graphene inevitably has defects in the form of grain boundaries and vacancies.
S. S. K. Mallineni, D. W. Boukhvalov, I. S. Zhidkov, A. I. Kukharenko, A. I. Slesarev, A. F. Zatsepin, S. O. Cholakh, A. M. Rao, S. M. Serkiz, S. Bhattacharya, E. Z. Kurmaev, R. Podila   +11 more
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Novel Organic Superbase Dopants for Ultraefficient N‐Doping of Organic Semiconductors

Advanced Materials, 2023
Yuanyuan Hu
exaly  

Elucidation of the Synergistic Effect of Dopants and Vacancies on Promoted Selectivity for CO2 Electroreduction to Formate

Advanced Materials, 2021
Yang Hou, Zhongjian Li, Lecheng Lei
exaly