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Single dopants in semiconductors
Nature Materials, 2011The sensitive dependence of a semiconductor's electronic, optical and magnetic properties on dopants has provided an extensive range of tunable phenomena to explore and apply to devices. Recently it has become possible to move past the tunable properties of an ensemble of dopants to identify the effects of a solitary dopant on commercial device ...
Koenraad, P.M., Flatté, M.E.
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AIP Conference Proceedings, 2007
The electrical properties of dopants in Si are of primary importance for the realization of electronic devices. Indium represents a promising p-type dopant whose electrical properties are improved by co-doping with C. From theoretical studies In and C are expected to pair in the Si matrix in order to lower the strain energy.
Fd'Acapito +6 more
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The electrical properties of dopants in Si are of primary importance for the realization of electronic devices. Indium represents a promising p-type dopant whose electrical properties are improved by co-doping with C. From theoretical studies In and C are expected to pair in the Si matrix in order to lower the strain energy.
Fd'Acapito +6 more
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Nature Materials, 2019
Lewis acids are shown to react with water, forming a complex with Bronsted acidity able to effectively dope semiconducting polymers through backbone protonation and internal charge transfer.
Han Yan, Wei Ma
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Lewis acids are shown to react with water, forming a complex with Bronsted acidity able to effectively dope semiconducting polymers through backbone protonation and internal charge transfer.
Han Yan, Wei Ma
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Molecular Dopants and High Mass Dopants for HALO and Extension Implantation
2007 International Workshop on Junction Technology, 2007Diffusion-less activation were realized for the 650degC SPE, >1300degC flash and 900degC spike anneals. For pSDE all boron dopant species (BF2, B10H14 and B18H22) achieved high quality junctions with flash annealing. With 900degC spike either B10H14 or B18H22 can be used while with 650degC SPE annealing only B18H22 can be used.
Akira Mineji +5 more
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Influence of dopants on the impermeability of graphene
Nanoscale, 2017Graphene has attracted much attention as an impermeable membrane and a protective coating against oxidation. While many theoretical studies have shown that defect-free graphene is impermeable, in reality graphene inevitably has defects in the form of grain boundaries and vacancies.
S. S. K. Mallineni +11 more
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2014
The applicability of XAFS to the structural study of dilute atoms is one of its main characteristics. It has been used extensively to study dopants in semiconductors, providing in many cases a structural basis for the understanding of physical properties.
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The applicability of XAFS to the structural study of dilute atoms is one of its main characteristics. It has been used extensively to study dopants in semiconductors, providing in many cases a structural basis for the understanding of physical properties.
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Dopant-Induced Terahertz Resonance of a Dopant-Rich Silicon Quantum Dot
2019 Silicon Nanoelectronics Workshop (SNW), 2019Dopants provide attractive and interesting properties, such as robust quantum states and low-energy physics. Since typical energy depth of dopants corresponds to terahertz (THz) photon energy, optical control of trapped and de-trapped electrons is feasible, paving a pathway for developing new functional electronic/optical devices.
Takuya Okamoto +3 more
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Theory of dopant diffusion assuming nondilute concentrations of dopant-defect pairs
Applied Physics Letters, 1991Current dopant diffusion theory is based on dopant-point-defect interaction, and assumes that the number of dopant-defect pairs is much smaller than the unpaired dopant concentration. In cases where a large number of excess defects are created from implantation damage, this may no longer be a valid assumption.
M. E. Law, H. Park, P. Novell
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Dopant-Induced Surface Magnetism in β-SiC Controlled by Dopant Depth
The Journal of Physical Chemistry C, 2014First-principles calculation discloses local magnetism on the β-SiC (110) and (001) surfaces due to nonmetallic dopants. The spontaneously polarized β-SiC (111) surface without dopants also exhibits strong magnetism which can be reduced significantly by dopant incorporation.
L. Z. Liu +4 more
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Journal of Applied Physics, 1991
A macroscopic theory of dopant diffusion moderated by dopant-dopant interactions is extended to include three-dimensional effects. Application to dopant diffusion in thin crystalline silicon films when a second dopant, present in high concentration and distributed uniformly throughout the film, results in unanticipated predicted dependency on thickness
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A macroscopic theory of dopant diffusion moderated by dopant-dopant interactions is extended to include three-dimensional effects. Application to dopant diffusion in thin crystalline silicon films when a second dopant, present in high concentration and distributed uniformly throughout the film, results in unanticipated predicted dependency on thickness
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