Results 251 to 260 of about 93,509 (299)
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Strong Dopant–Dopant Electronic Coupling in Emissive Codoped Two Dimensional Metal Halide Hybrid
The Journal of Physical Chemistry Letters, 2023Multimetallic halide hybrids are attractive for the fundamental understanding of interacting excitons. However, realizing halide hybrids that incorporate multiple heterometal centers has been synthetically challenging. This further limits access to gaining physical insight into the electronic coupling mechanism between the constituent metal halide ...
Ashwath Kudlu +9 more
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Dopant delineation: novel technique for silicon dopant implantation defects identification
Proceedings of the 9th International Symposium on the Physical and Failure Analysis of Integrated Circuits (Cat. No.02TH8614), 2003Electrical properties of semiconductor devices change drastically with doping. Doping alone has no distinguishable topographical contrast or carrier concentration levels when compared to a non-doped area of an active region. As a result of that, dopant profiling and p-n junction delineation has become one very critical step in failure analysis to ...
null Ng Sea Chooi, null Ng Jou Ching
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2D Dopant Determination in Laser-Diffused Si Resistors Using Dopant-Selective Etching
Journal of The Electrochemical Society, 2006Two-dimensional (2D) dopant profiles, in the range of 9 X 10 1 6 to 3.6 X 10 1 8 atoms/cm 3 , in laser-diffused silicon resistors were obtained using dopant selective etching (DSE) in combination with cross-sectional transmission electron microscopy (TEM) and focused ion beam technique.
Y. Liao +3 more
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Dopant-Induced Terahertz Resonance of a Dopant-Rich Silicon Quantum Dot
2019 Silicon Nanoelectronics Workshop (SNW), 2019Dopants provide attractive and interesting properties, such as robust quantum states and low-energy physics. Since typical energy depth of dopants corresponds to terahertz (THz) photon energy, optical control of trapped and de-trapped electrons is feasible, paving a pathway for developing new functional electronic/optical devices.
Takuya Okamoto +3 more
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2014
The applicability of XAFS to the structural study of dilute atoms is one of its main characteristics. It has been used extensively to study dopants in semiconductors, providing in many cases a structural basis for the understanding of physical properties.
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The applicability of XAFS to the structural study of dilute atoms is one of its main characteristics. It has been used extensively to study dopants in semiconductors, providing in many cases a structural basis for the understanding of physical properties.
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Theory of dopant diffusion assuming nondilute concentrations of dopant-defect pairs
Applied Physics Letters, 1991Current dopant diffusion theory is based on dopant-point-defect interaction, and assumes that the number of dopant-defect pairs is much smaller than the unpaired dopant concentration. In cases where a large number of excess defects are created from implantation damage, this may no longer be a valid assumption.
M. E. Law, H. Park, P. Novell
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Dopant-Induced Surface Magnetism in β-SiC Controlled by Dopant Depth
The Journal of Physical Chemistry C, 2014First-principles calculation discloses local magnetism on the β-SiC (110) and (001) surfaces due to nonmetallic dopants. The spontaneously polarized β-SiC (111) surface without dopants also exhibits strong magnetism which can be reduced significantly by dopant incorporation.
L. Z. Liu +4 more
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Molecular Dopants and High Mass Dopants for HALO and Extension Implantation
2007 International Workshop on Junction Technology, 2007Diffusion-less activation were realized for the 650degC SPE, >1300degC flash and 900degC spike anneals. For pSDE all boron dopant species (BF2, B10H14 and B18H22) achieved high quality junctions with flash annealing. With 900degC spike either B10H14 or B18H22 can be used while with 650degC SPE annealing only B18H22 can be used.
Akira Mineji +5 more
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Multiple-dopant selective emitter
Third NREL Conference on thermophotovoltaic generation of electricity, 1997Power efficiency is one of the major concerns in designing and developing a thermophotovoltaic (TPV) generator. Erbium oxide and ytterbium oxide emitter have unique selective line emission, which exhibit a high emittance at a particular wavelength and very low emittance in the rest of the infrared spectrum.
Zheng Chen +2 more
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Dopant Electromigration in Semiconductors
Advanced Materials, 1997AbstractA doped semiconductor can be viewed as a mixed electronic‐ionic conductor, with the dopants as mobile ions. Normally the temperature range where this becomes true is not even close to that where the (opto)electronic properties of the material are of interest.
David Cahen, Leonid Chernyak
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