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Dopants in HgCdTe

MRS Proceedings, 1997
AbstractIn this paper we discuss our ab initio calculations of native point defect and impurity densities in HgCdTe. Our calculations have explained the experimental finding in general, and in particular have explained the in-active incorporation of the group VII elements under mercury-deficient conditions; have shown that the group I elements have a ...
M. A. Berding, A. Sher
openaire   +1 more source

The Site of In Dopants in Si

AIP Conference Proceedings, 2007
The electrical properties of dopants in Si are of primary importance for the realization of electronic devices. Indium represents a promising p-type dopant whose electrical properties are improved by co-doping with C. From theoretical studies In and C are expected to pair in the Si matrix in order to lower the strain energy.
Fd'Acapito   +6 more
openaire   +2 more sources

Making weak dopants strong

Nature Materials, 2019
Lewis acids are shown to react with water, forming a complex with Bronsted acidity able to effectively dope semiconducting polymers through backbone protonation and internal charge transfer.
Han Yan, Wei Ma
openaire   +2 more sources

The Effect of Mg and Zn Dopants on Pt/Al2O3 for the Dehydrogenation of Perhydrodibenzyltoluene

Catalysts, 2021
Dmitri Bessarabov   +2 more
exaly  

Low‐Cost Nucleophilic Organic Bases as n‐Dopants for Organic Field‐Effect Transistors and Thermoelectric Devices

Advanced Functional Materials, 2021
Yuanyuan Hu   +2 more
exaly  

Probing Efficient N‐Type Lanthanide Dopants for Mg3Sb2 Thermoelectrics

Advanced Science, 2020
Bo Iversen, Jiawei Zhang
exaly  

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