Results 261 to 270 of about 93,509 (299)

Dopants, defects and diffusion

Physics World, 1995
Silicon is the driving force behind the information superhighway, multimedia and all the other much-hyped trends that have suddenly been noticed by the media in the past two years. This information revolution has been made possible by the phenomenal advances in the manufacture of silicon-based integrated circuits.
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Novel Organic Superbase Dopants for Ultraefficient N‐Doping of Organic Semiconductors

Advanced Materials, 2023
Tong Wu, Zebing Zeng, Yuan-Yuan Hu
exaly  

Nitrogen defects/boron dopants engineered tubular carbon nitride for efficient tetracycline hydrochloride photodegradation and hydrogen evolution

Applied Catalysis B: Environmental, 2022
Xiaoli Zhao, Jinqiang Zhang, Zhimin Ao
exaly  

Precisely modifying Co2P/black TiO2 S-scheme heterojunction by in situ formed P and C dopants for enhanced photocatalytic H2 production

Applied Catalysis B: Environmental, 2022
Jin-Tao Ren, Zhong-Yong Yuan
exaly  

Dopant Profiling in Silicon

1984
The developments necessary to implement a comprehensive research programme aimed at understanding dopant incorporation in silicon are described. The two experimental techniques used, and possessing the required dynamic range and depth resolution, are high resolution Spreading Resistance and Secondary Ion Mass Spectrometry.
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Dopant Diffusion and Segregation

1988
In a defect-free, single-crystal of silicon, dopant impurities diffuse into the perfect lattice structure by interacting with point defects, such as silicon vacancies and interstitials. In addition to the point defects in which exist in equilibrium with the crystal lattice, the point-defect concentration can also be influenced externally (eg, by ...
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Dopants

1989
Gianfranco Cerofolini, Laura Meda
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Random Dopant Fluctuation (RDF)

2016
Following Moore’s Law (Moore in Progress in digital integrated electronics. In: IEDM technical digest, pp 11–13, 1975, [1], semiconductor industries have doubled the density of transistors in integrated circuits (ICs) every two years. This has rapidly increased the performance of ICs because the degree of integration has grown exponentially.
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dopant, n.

2023
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Low‐Cost Nucleophilic Organic Bases as n‐Dopants for Organic Field‐Effect Transistors and Thermoelectric Devices

Advanced Functional Materials, 2021
Hua-jie Chen, Zebing Zeng, Thuc-Quyen Nguyen   +2 more
exaly