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Magnetotunneling in double-barrier heterostructures
Physical Review B, 1989We report measurements of the current-voltage characteristics of an asymmetric GaAs/${\mathrm{Al}}_{\mathrm{x}}$${\mathrm{Ga}}_{1\mathrm{\ensuremath{-}}\mathrm{x}}$As double-barrier resonant-tunneling device in a magnetic field B parallel to the tunneling direction.
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