Results 221 to 230 of about 1,417,759 (289)

Optical Access to Dark Excitons Via Spin–Phonon Fano Interference

open access: yesAdvanced Science, EarlyView.
Dark excitons in quantum dots neither absorb nor emit light and stay hidden from optical spectroscopy. Quantum interference now reveals them: light scattered by acoustic phonons interferes with a phonon‐assisted spin flip between bright and dark exciton, carving a Fano dip into the spectrum whose position gives the bright–dark splitting. Magnetic field,
Janina J. Schindler   +7 more
wiley   +1 more source

Ultra‐Low Power Consumption and Highly Durability in Sm:HfO2 Thin Film Ferroelectric Memristor for Edge Detection

open access: yesAdvanced Electronic Materials, EarlyView.
ABSTRACT With the continuous development of computer image processing, developing efficient and low‐power computing devices has become a key challenge. Memristors have integrated in‐situ storage and computing capabilities, making them an ideal choice for low‐power image processing computing architectures. However, current memristors are confronted with
Tengyu Li   +4 more
wiley   +1 more source

Low‐Field Giant Dielectric Tunability by Polaron‐Mediated Interfacial Polarization in Pulsed‐Laser‐Deposited‐Nanocrystalline/Amorphous Composite BaTiO3 Thin Films

open access: yesAdvanced Electronic Materials, EarlyView.
Comparison of tunability efficiency between vacuum‐deposited PLD‐BTO films grown at Td = 550°C in the present study and representative previous reports. ABSTRACT Electrically tunable dielectric thin films are essential components for next‐generation low‐voltage electronic devices.
Shinya Kondo   +7 more
wiley   +1 more source

Enhanced Synthesis of Cs2AgBiBr6 Single Crystals via Controlled Cooling for Enhanced Dual‐Band Light Detection

open access: yesAdvanced Electronic Materials, EarlyView.
This work presents a dual‐band photodetector based on the large‐scale, precise synthesis of Cs2AgBiBr6 single crystals. A rapid and efficient synthesis method is demonstrated, yielding high‐quality Cs2AgBiBr6 crystals with an average size of 2 × 2 × 1.5 mm3 and a production yield of 12.66%.
Yezhan Li   +9 more
wiley   +1 more source

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