Results 241 to 250 of about 5,372,457 (283)

Pinning-Free Edge Contact Monolayer MoS2 FET

International Electron Devices Meeting, 2020
One-dimensional contact (so-called edge contact) to monolayer 2D materials has been proposed for ultimate transistor scaling but reported on-state currents are much lower than those from top contact devices.
T. Hung, Shih-Yun Wang, Chih-Piao Chuu, Yun-Yan Chung, Ang-Sheng Chou, F. Huang, Ta-Kun Chen, Ming-Yang Li, Chao-Ching Cheng, Jin Cai, C. Chien, Wen‐Hao Chang, H. P. Wong, Lain‐Jong Li   +13 more
semanticscholar   +1 more source

Edge-contact large area hetero-structure fast photodetector utilizing two-dimensional r-GO on three-dimensional GaN material interface

, 2020
Here we report a contact geometry for directly accessing the hetero-structured interface formed at the junction of a two-dimensional and three-dimensional material.
N. Prakash, G. Kumar, M. Singh, S.P. Singh, P. Pal, S. Khanna   +5 more
semanticscholar   +1 more source

Self-Aligned Edge Contact Process for Fabricating High-Performance Transition-Metal Dichalcogenide Field-Effect Transistors.

ACS Nano
The persistent challenges encountered in metal-transition-metal dichalcogenide (TMD) junctions, including tunneling barriers and Fermi-level pinning, pose significant impediments to achieving optimal charge transport and reducing contact resistance.
Seokjin Ko, Dongryul Lee, Jeongmin Kim, Chang-Koo Kim, Jihyun Kim   +4 more
semanticscholar   +1 more source

A novel contact area based analysis to study the thermo-mechanical effect of cutting edge radius using numerical and multi-sensor experimental investigation in turning

Journal of Materials Processing Technology, 2021
The micro-geometry of the cutting tool significantly affects the process forces, thermal load, tool wear, and quality of the finished surface and chip characteristics.
S. Bernard, R. Selvaganesh, Ganesh Khoshick, D. Samuel Raj   +3 more
semanticscholar   +1 more source

Experimentally Determining the Top and Edge Contact Resistivities of Two-Step Sulfurization Nb-Doped MoS2 Films Using the Transmission Line Measurement

IEEE Electron Device Letters, 2019
This study determined the top (vertical) and edge (horizontal) resistivities of metal–MoS2 contact based on the experimental results obtained using the transmission line measurement structure.
Yun-Yan Chung, Chi-Feng Li, Chao-Ting Lin, Yen-Teng Ho, C. Chien   +4 more
semanticscholar   +1 more source

Contact Resistivity in Edge‐Contacted Graphene Field Effect Transistors

Advanced Electronic Materials, 2022
A great challenge is presented when metals have contact with a 2D semiconducting material because the contact resistances (Rc) induced at the metal‐graphene interfaces hinder the performances of 2D devices, and therefore low resistance Ohmic contacts ...
Sungwon Lee, Hyung-Bok Choi, I. Moon, Hoseong Shin, Kenji Watanabe, T. Taniguchi, W. Yoo   +6 more
semanticscholar   +1 more source

Meshing performance of spiral bevel gear with different loads and modules considering edge contact by finite element method

Transactions of the Canadian Society for Mechanical Engineering, 2019
To analyze the edge contact of spiral bevel gears, owing to its effect on meshing performance, batch processing is performed based on a static solver and the finite element method (FEM) because of its computational speed advantage.
Xiangying Hou, Z. Fang, Xuezhong Fu, Xijin Zhang   +3 more
semanticscholar   +1 more source

Lens centering using edge contact mounting

Optical Engineering + Applications, 2019
This paper introduces a new type of drop-in technique used to center passively and accurately lenses in optical mounts. This novel lens mounting method is called edge contact mounting and uses the edge at the intersection of the cylindrical and optical ...
Frédéric Lamontagne, Maxime Savard, N. Desnoyers, M. Tremblay   +3 more
semanticscholar   +1 more source

Minimum Contact Resistance in Monoelemental 2D Material Nanodevices With Edge-Contacts

IEEE Electron Device Letters, 2021
We use atomistic quantum transport device simulations to investigate the contact resistance ( ${R}_{C}$ ) in monoelemental 2D material nanoribbon MOSFETs with edge contacts.
M. Poljak, M. Matić, A. Zeljko
semanticscholar   +1 more source

Analysis of the two-point wheel-rail contact scenario using the knife-edge-equivalent contact constraint method

Mechanism and Machine Theory, 2020
This paper presents a rigid contact approach to analyse the two-point wheel-rail contact scenario using the simplified constraint-based contact method called Knife-edge Equivalent Contact method (KEC-method).
J. Aceituno, P. Urda, E. Briales, J. Escalona   +3 more
semanticscholar   +1 more source